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公开(公告)号:EP4166226B1
公开(公告)日:2024-11-06
申请号:EP22212575.9
申请日:2013-11-13
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公开(公告)号:EP4393642A3
公开(公告)日:2024-09-11
申请号:EP23220614.4
申请日:2023-12-28
发明人: MORIN, Philippe , WHITTOM, Guillaume , HOANG, Canam , COLLETTE, Jean-Francois , NAULT, Pierre-Luc , DARSIGNY, Olivier , FORTIER, Guillaume , LAFORTUNE, David
IPC分类号: B24B19/14 , B24B19/26 , B24B21/16 , B24B21/20 , B24B27/00 , B24B49/16 , B24B51/00 , B24B37/005
CPC分类号: B24B19/14 , B24B19/26 , B24B51/00 , B24B49/16 , B24B21/165 , B24B27/0038 , B24B21/20 , B24B37/005 , B24B21/16
摘要: A manufacturing method includes controlling a robotic polishing device (46), at a controller (48), to polish a plurality of first zones (88A; 90A) of a bladed rotor (20) for an aircraft engine based on a first operating parameter associated with the robotic polishing device (46). An exterior (56) of the bladed rotor (20) includes the first zones (88A; 90A) and a plurality of second zones (88B-F; 90B-F). The first zones (88A; 90A) are distributed circumferentially about an axis (22) of the bladed rotor (20) in a first array. The second zones (88B-F; 90B-F) are distributed circumferentially about the axis (22) of the bladed rotor (20) in a second array. The method further includes controlling the robotic polishing device (46), at a controller (48), to polish the second zones (88B-F; 90B-F) using the robotic polishing device (46) based on a second operating parameter. The second operating parameter for the robotic polishing device (56) is different than the first operating parameter.
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公开(公告)号:EP4410922A1
公开(公告)日:2024-08-07
申请号:EP22876251.4
申请日:2022-09-27
申请人: Fujimi Incorporated
发明人: MORI, Yoshio , NAKAGAI, Yuichiro , ODA, Hiroyuki
IPC分类号: C09K3/14 , B24B37/00 , C09G1/02 , C09G1/04 , H01L21/304
CPC分类号: B24B37/00 , C09K3/14 , H01L21/304 , C09G1/02 , C09G1/04
摘要: A polishing composition that can achieve an excellent polishing removal rate for an object to be polished is provided. The polishing composition used for polishing the object to be polished is provided. The polishing composition contains water, and sodium permanganate as an oxidant. In some preferred embodiments, the polishing composition further contains a metal salt selected from salts each of which has a cation containing a metal belonging to Groups 3 to 16 in the periodic table, and an anion. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.
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公开(公告)号:EP4410477A1
公开(公告)日:2024-08-07
申请号:EP22876426.2
申请日:2022-09-29
申请人: Sanoh Industrial Co., Ltd. , National University Corporation Nagaoka University of Technology , Hitechnoth Corporation
发明人: AIDA Hideo , KATAKURA Haruji , OMIYA Natsuko , KOBORI Yasuyuki
IPC分类号: B24B37/005 , B24B37/00 , B24B37/30 , H01L21/304
CPC分类号: B24B37/005 , B24B37/00 , H01L21/304 , B24B37/30
摘要: A polishing device includes a wafer holder (31) that holds a wafer (W) and that brings the held wafer (W) into contact with a polishing surface (22a); a polishing plate driver (24) or a head driver (34) that, when polishing the wafer (W), relatively rotates the wafer holder (31) with respect to the polishing surface (22a) to which a slurry (SL) is supplied; a polishing pressure applier (32) that applies polishing pressure to the wafer (W) by pressing the wafer (W) against the polishing surface (22a) via the wafer holder (31); and a controller (50) that, during polishing of the wafer (W), cyclically switches a state of the polishing pressure applied to the wafer (W) via the polishing pressure applier (32) between a high pressure state and a low pressure state in which the polishing pressure is lower than in the high pressure state.
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公开(公告)号:EP4400258A1
公开(公告)日:2024-07-17
申请号:EP22866477.7
申请日:2022-08-30
发明人: XU, Xiaoyu
摘要: Disclosed in the present invention is a wafer polishing system, at least comprising a polishing unit, which comprises a fixed working station and two polishing modules, wherein the polishing modules are located on two sides of the fixed working station; each polishing module comprises a polishing platform and a polishing arm, which can drive a wafer to move relative to the polishing platform, so as to implement a polishing process; the polishing arms of the polishing modules on the two sides are located in a diagonal direction of the fixed working station; and the polishing arms can respectively swing between the fixed working station and the polishing platforms to transfer the wafer, and movement regions of the polishing arms having an overlapping portion. By means of the present invention, the polishing arm of each polishing module is independently controlled, so as to achieve better stability and flexibility; and only one fixed working station is needed to achieve the cooperation of multiple polishing modules to implement the polishing process of single or multiple wafers, so that the movement path in the polishing process is greatly shortened, which minimizes the time of the transfer process and improves the polishing efficiency.
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公开(公告)号:EP4395958A1
公开(公告)日:2024-07-10
申请号:EP22865607.0
申请日:2022-09-02
申请人: CMC Materials LLC
发明人: MA, Rui , LI, Kaiting , LINDSAY, Jessica , KIM, Sangcheol , RAI, Satish
CPC分类号: B24B37/24 , C09D175/04 , C08G18/7614 , C08G18/4854 , C08G18/10 , C08G18/3237
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公开(公告)号:EP3683019B1
公开(公告)日:2024-07-10
申请号:EP18795917.6
申请日:2018-09-10
IPC分类号: C08G18/18 , C08G18/48 , C08G18/76 , C08J9/12 , C08J9/32 , B24D3/32 , B24D11/00 , B24D18/00 , B24B37/24 , C08G18/10
CPC分类号: B24D3/32 , B24D18/00 , B24B37/24 , B24D11/003 , B24D18/0009 , C08G18/18 , C08G18/10 , C08G2110/0020210101 , C08G18/7621 , C08G18/4854 , C08J9/122 , C08J2375/0420130101 , C08J2203/0620130101 , C08J9/32 , C08J2203/2220130101 , C08J2205/04420130101
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