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    Compositions and processes for immersion lithography
    1.
    发明公开
    Compositions and processes for immersion lithography 有权
    Zusammensetzungen und VerfahrenfürImmersionslithografie

    公开(公告)号：EP1918778A2

    公开(公告)日：2008-05-07

    申请号：EP07119637.2

    申请日：2007-10-30

    申请人： Rohm and Haas Electronic Materials LLC

    发明人： Caporale, Stefan J ,  Barclay, George G ,  Wang, Deyan ,  Jia, Li

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/2041 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397

    摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

    摘要翻译： 提供了可用于浸没光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含一种或多种具有水接触角的材料，其可以通过用碱和/或一种或多种包含氟化光致酸不稳定基团的材料和/或一种或多种包含酸性基团间隔的材料 从聚合物骨架。 本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸液中。

    Surface active additive and photoresist composition comprising same
    2.
    发明公开
    Surface active additive and photoresist composition comprising same 审中-公开
    Oberflächenaktives添加剂和维生素DustbeständigeZusammensetzungen damit

    公开(公告)号：EP2527377A1

    公开(公告)日：2012-11-28

    申请号：EP12168948.3

    申请日：2012-05-22

    申请人： Rohm and Haas Electronic Materials LLC

    发明人： Wang, Deyan ,  Wu, Chunyi ,  Liu, Cong ,  Pohlers, Gerhard ,  Xu, Cheng-Bai ,  Barclay, George G

    IPC分类号： C08F20/10 ,  C08F20/54 ,  G03F7/00 ,  G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/24 ,  C08F220/32 ,  C08F220/34 ,  C08F220/36 ,  C08F220/38 ,  C08F220/58 ,  C08F226/06 ,  C08F2220/1833 ,  C08F2220/283 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/09 ,  G03F7/2041

    摘要： A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II):



    wherein a is 0 or 1, each R a is independently H, F, C 1-10 alkyl, or C 1-10 fluoroalkyl, L 1 is a straight chain or branched C 1-20 alkylene group, or a monocyclic, polycyclic, or fused polycyclic C 3-20 cycloalkylene group, each R b is independently H, C 1-10 alkyl, C 3-20 cycloalkyl, C 3-20 heterocycloalkyl, an aliphatic C 5-20 oxycarbonyl, or a C 1-30 acyl group optionally including a heteroatom substituent group, where each R b is separate or at least one R b is attached to an adjacent R b ; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic C 3-20 heterocycloalkylene group, and X is H, C 1-10 alkyl, aliphatic C 5-20 oxycarbonyl, or a C 1-30 acyl group optionally including a heteroatom substituent group; and each R c is independently C 1-10 alkyl, C 3-20 cycloalkyl, or C 3-20 heterocycloalkyl, wherein each R c is separate or at least one R c is attached to an adjacent R c .

    摘要翻译： 聚合物包含包含式（Ia），式（Ib）或式（Ia）和（Ib）的组合的含氮单体的单体的聚合产物和具有式（II）的酸可去保护的单体， ：其中a为0或1，每个R a独立地为H，F，C 1-10烷基或C 1-10氟烷基，L 1为直链或支链C 1-20亚烷基，或单环，多环 或稠合多环C 3-20亚环烷基，每个R b独立地为H，C 1-10烷基，C 3-20环烷基，C 3-20杂环烷基，脂族C 5-20氧羰基或C 1-30 任选地包括杂原子取代基的酰基，其中每个R b分开或至少一个R b连接到相邻的R b; LN是含氮单环，多环或稠合多环C 3-20杂环亚烷基，X是H，C 1-10烷基，脂族C 5-20氧羰基或任选包括杂原子的C 1-30酰基 取代基; 并且每个R c独立地为C 1-10烷基，C 3-20环烷基或C 3-20杂环烷基，其中每个R c是分开的或至少一个R c连接到相邻的R c。

    Compositions and processes for immersion lithography
    6.
    发明公开
    Compositions and processes for immersion lithography 审中-公开
    沉浸光刻的组成和工艺

    公开(公告)号：EP2420891A1

    公开(公告)日：2012-02-22

    申请号：EP11189819.3

    申请日：2007-10-30

    申请人： Rohm and Haas Electronic Materials LLC

    发明人： Caporale, Stefan J. ,  Barclay, George G ,  Wang, Deyan ,  Jia, Li

    IPC分类号： G03F7/20 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039

    CPC分类号： G03F7/2041 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397

    摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

    摘要翻译： 提供了可用于浸没式光刻的新型光刻胶组合物。 本发明优选的光刻胶组合物包含一种或多种水接触角可通过用碱和/或一种或多种包含氟化光酸不稳定基团的材料处理而改变的材料和/或包含酸性基团的一种或多种材料 来自聚合物主链。 本发明的特别优选的光致抗蚀剂可以在浸没式光刻加工过程中表现出减少的抗蚀剂材料浸出到与光刻胶层接触的浸没流体中。