摘要:
New photoresist are provided that comprises a low-Tg component and that are particularly useful for ion implant lithography applications. Preferred photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.
摘要:
New photoresist compositions are provided that comprise a component that comprises two or more amide groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a multi-amide component that can function to decrease undesired photogenrated-acid diffusion out of unexposed regions of a photoresist coating layer
摘要:
A copolymer comprises the polymerised product of a base-soluble monomer of formula (I):
wherein R a is H, F, C 1-10 alkyl, or C 1-10 fluoroalkyl, L 1 is an m valent C 2-30 alkylene, C 3-30 cycloalkylene, C 6-30 arylene, C 7-30 aralkylene group, X 1 is independently a base-soluble organic group comprising β-diketone, β-ester-ketone, β-di-ester, or a combination comprising at least one of the foregoing; and an additional monomer copolymerizable with the base-soluble monomer of formula (I). A coated film comprises the photoresist comprising the copolymer.
摘要:
New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups.
摘要:
New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.
摘要:
New photoresists are provided that comprise preferably as distinct components: a resin, a photoactive component and a phenolic component Preferred photoresists of the invention are can be useful for ion implant lithography protocols.
摘要:
A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II):
wherein a is 0 or 1, each R a is independently H, F, C 1-10 alkyl, or C 1-10 fluoroalkyl, L 1 is a straight chain or branched C 1-20 alkylene group, or a monocyclic, polycyclic, or fused polycyclic C 3-20 cycloalkylene group, each R b is independently H, C 1-10 alkyl, C 3-20 cycloalkyl, C 3-20 heterocycloalkyl, an aliphatic C 5-20 oxycarbonyl, or a C 1-30 acyl group optionally including a heteroatom substituent group, where each R b is separate or at least one R b is attached to an adjacent R b ; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic C 3-20 heterocycloalkylene group, and X is H, C 1-10 alkyl, aliphatic C 5-20 oxycarbonyl, or a C 1-30 acyl group optionally including a heteroatom substituent group; and each R c is independently C 1-10 alkyl, C 3-20 cycloalkyl, or C 3-20 heterocycloalkyl, wherein each R c is separate or at least one R c is attached to an adjacent R c .
摘要:
New photoresists are provided that comprise a multi-keto component and that are particularly useful for ion implant lithography applications. Preferred photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride, hafnium silicate, zirconium silicate and other inorganic surfaces.