Photoresists comprising multi-amide component
    2.
    发明公开
    Photoresists comprising multi-amide component 审中-公开
    Fotolacke mit Multi-Amid-Komponente

    公开(公告)号:EP2428842A1

    公开(公告)日:2012-03-14

    申请号:EP11181122.0

    申请日:2011-09-13

    IPC分类号: G03F7/038 G03F7/039

    摘要: New photoresist compositions are provided that comprise a component that comprises two or more amide groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a multi-amide component that can function to decrease undesired photogenrated-acid diffusion out of unexposed regions of a photoresist coating layer

    摘要翻译: 提供新的光致抗蚀剂组合物,其包含包含两个或更多个酰胺基团的组分。 本发明优选的光致抗蚀剂可以包含具有光致酸不稳定基团的树脂; 光致酸发生剂化合物; 以及可以起到减少光致抗蚀剂涂层的未曝光区域中不期望的光致酸扩散的作用的多酰胺组分

    Polymer and photoresist comprising the polymer
    4.
    发明公开
    Polymer and photoresist comprising the polymer 审中-公开
    Polymer und Fotolack mit dem Polymer

    公开(公告)号:EP2527379A1

    公开(公告)日:2012-11-28

    申请号:EP12168975.6

    申请日:2012-05-22

    摘要: A copolymer comprises the polymerised product of a base-soluble monomer of formula (I):

    wherein R a is H, F, C 1-10 alkyl, or C 1-10 fluoroalkyl, L 1 is an m valent C 2-30 alkylene, C 3-30 cycloalkylene, C 6-30 arylene, C 7-30 aralkylene group, X 1 is independently a base-soluble organic group comprising β-diketone, β-ester-ketone, β-di-ester, or a combination comprising at least one of the foregoing; and an additional monomer copolymerizable with the base-soluble monomer of formula (I).
    A coated film comprises the photoresist comprising the copolymer.

    摘要翻译: 共聚物包含式(I)的可溶于碱的单体的聚合产物:其中R a是H,F,C 1-10烷基或C 1-10氟代烷基,L 1是m价C 2-30亚烷基 ,C 3-30亚环烷基,C 6-30亚芳基,C 7-30亚芳基,X 1独立地是包含二 - 二酮,β-酯 - 酮,二 - 二酯或其组合的基础可溶性有机基团 包括前述的至少一个; 和可与式(I)的碱溶性单体共聚的另外的单体。 涂覆膜包括包含共聚物的光致抗蚀剂。

    Photoresists and methods for use thereof
    7.
    发明公开
    Photoresists and methods for use thereof 审中-公开
    Fotoresse und Verfahren zu deren Verwendung

    公开(公告)号:EP2336829A1

    公开(公告)日:2011-06-22

    申请号:EP10195063.2

    申请日:2010-12-15

    发明人: Pohlers, Gerhard

    IPC分类号: G03F7/039 G03F7/075 G03F7/40

    摘要: New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.

    摘要翻译: 提供新的光致抗蚀剂,其包含含Si组分,并且其特别适用于离子植入光刻应用。 本发明的光刻胶可以对下面的无机表面(例如SiON,氧化硅,氮化硅和其它无机表面)表现出良好的粘合性。

    Surface active additive and photoresist composition comprising same
    9.
    发明公开
    Surface active additive and photoresist composition comprising same 审中-公开
    Oberflächenaktives添加剂和维生素DustbeständigeZusammensetzungen damit

    公开(公告)号:EP2527377A1

    公开(公告)日:2012-11-28

    申请号:EP12168948.3

    申请日:2012-05-22

    摘要: A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II):



    wherein a is 0 or 1, each R a is independently H, F, C 1-10 alkyl, or C 1-10 fluoroalkyl, L 1 is a straight chain or branched C 1-20 alkylene group, or a monocyclic, polycyclic, or fused polycyclic C 3-20 cycloalkylene group, each R b is independently H, C 1-10 alkyl, C 3-20 cycloalkyl, C 3-20 heterocycloalkyl, an aliphatic C 5-20 oxycarbonyl, or a C 1-30 acyl group optionally including a heteroatom substituent group, where each R b is separate or at least one R b is attached to an adjacent R b ; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic C 3-20 heterocycloalkylene group, and X is H, C 1-10 alkyl, aliphatic C 5-20 oxycarbonyl, or a C 1-30 acyl group optionally including a heteroatom substituent group; and each R c is independently C 1-10 alkyl, C 3-20 cycloalkyl, or C 3-20 heterocycloalkyl, wherein each R c is separate or at least one R c is attached to an adjacent R c .

    摘要翻译: 聚合物包含包含式(Ia),式(Ib)或式(Ia)和(Ib)的组合的含氮单体的单体的聚合产物和具有式(II)的酸可去保护的单体, :其中a为0或1,每个R a独立地为H,F,C 1-10烷基或C 1-10氟烷基,L 1为直链或支链C 1-20亚烷基,或单环,多环 或稠合多环C 3-20亚环烷基,每个R b独立地为H,C 1-10烷基,C 3-20环烷基,C 3-20杂环烷基,脂族C 5-20氧羰基或C 1-30 任选地包括杂原子取代基的酰基,其中每个R b分开或至少一个R b连接到相邻的R b; LN是含氮单环,多环或稠合多环C 3-20杂环亚烷基,X是H,C 1-10烷基,脂族C 5-20氧羰基或任选包括杂原子的C 1-30酰基 取代基; 并且每个R c独立地为C 1-10烷基,C 3-20环烷基或C 3-20杂环烷基,其中每个R c是分开的或至少一个R c连接到相邻的R c。

    Photoresists and methods for use thereof
    10.
    发明公开
    Photoresists and methods for use thereof 审中-公开
    Fotoresiste und Verwendungsverfahrendafür

    公开(公告)号:EP2472327A1

    公开(公告)日:2012-07-04

    申请号:EP11195276.8

    申请日:2011-12-22

    IPC分类号: G03F7/039 G03F7/40 H01L21/266

    摘要: New photoresists are provided that comprise a multi-keto component and that are particularly useful for ion implant lithography applications. Preferred photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride, hafnium silicate, zirconium silicate and other inorganic surfaces.

    摘要翻译: 提供新的光致抗蚀剂,其包含多酮组分并且对离子植入光刻应用特别有用。 本发明的优选光致抗蚀剂可以对下面的无机表面(如SiON,氧化硅,氮化硅,硅酸铪,硅酸锆和其它无机表面)表现出良好的粘合性。