公开(公告)号：EP1205966A2

公开(公告)日：2002-05-15

申请号：EP01000615.3

申请日：2001-11-09

申请人： Texas Instruments Incorporated

发明人： Rotondaro, Antonio L. P.

IPC分类号： H01L21/306 ,  H01L21/316 ,  H01L21/28

CPC分类号： H01L21/02046 ,  H01L21/02164 ,  H01L21/02312 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/2822 ,  H01L21/302 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185 ,  H01L29/518

摘要： The instant invention is a method for forming a smooth interface between the upper surface of a silicon substrate and a dielectric layer. The invention comprises forming a thin amorphous region (180) on the upper surface (170) of a silicon substrate prior to forming the dielectric layer on the upper silicon surface.

摘要翻译： 本发明是一种用于形成硅衬底的上表面上和介电层之间的光滑界面的方法。 本发明包括形成上硅表面上的介电层之前形成于硅衬底的上表面（170）的薄的非晶区域（180）。

公开(公告)号：EP1077480A1

公开(公告)日：2001-02-21

申请号：EP99402076.6

申请日：1999-08-17

申请人： Applied Materials, Inc.

发明人： Xia, Li-Qun ,  Lim, Tian-Hoe ,  Gaillard, Frederic ,  Yieh, Ellie

IPC分类号： H01L21/316 ,  C23C16/30

CPC分类号： H01L21/02126 ,  C23C16/0245 ,  C23C16/401 ,  C23C16/56 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612

摘要： A method for providing a dielectric film having enhanced adhesion and stability.. Pre-deposition, post deposition and post cure treatments enhance adhesion of the dielectric film to an underlying substrate and overlying cap layer. The enhanced film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. A pre-deposition treatment process with atomic hydrogen enhances film adhesion by reducing weakly bound oxides on the surface of the substrate. A post-deposition densification process in a reducing atmosphere enhances stability if the film is to be cured ex-situ. In a preferred embodiment, the layer a low dielectric constant film deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si-C) bond.

摘要翻译： 一种用于提供具有增强的粘附性和稳定性的电介质膜的方法。预沉积，后沉积和后固化处理增强了介电膜对下面的衬底和覆盖覆盖层的粘附。 增强膜在集成电路中作为金属间或前金属介电层是特别有用的。 具有原子氢的预沉积处理方法通过减少衬底表面上的弱结合氧化物来增强膜的粘附性。 在还原气氛中的沉积后致密化过程如果膜被非原位固化则提高了稳定性。 在优选的实施方案中，该层由臭氧处理气体沉积的低介电常数膜和具有至少一个硅 - 碳（Si-C）键的有机硅烷前体。

公开(公告)号：EP0492991B1

公开(公告)日：1999-06-23

申请号：EP91311810.5

申请日：1991-12-19

申请人： SILICONIX Incorporated

发明人： Hshieh, Fwu-Iuan ,  Chang, Mike ,  Yilmaz, Hamza

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02312 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31662 ,  H01L21/3221 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66712 ,  H01L29/7811

摘要： A submicron channel length is achieved in cells having sharp corners, such as square cells, by blunting the corners of the cells. In this way, the three dimensional diffusion effect is minimized, and punch through is avoided. Techniques are discussed for minimizing defects in the shallow junctions used for forming the short channel, including the use of a thin dry oxide rather than a thicker steam thermal over the body contact area, a field shaping p+ diffusion to enhance breakdown voltage, and TCA gettering. Gate-source leakage is reduced with extrinsic gettering on the poly backside, and intrinsic gettering due to the choice of starting material.

公开(公告)号：EP0560617A2

公开(公告)日：1993-09-15

申请号：EP93301879.8

申请日：1993-03-12

申请人： KAWASAKI STEEL CORPORATION

发明人： Sato, Nobuyoshi, c/o Kawasaki Steel Corporation ,  Ohta, Tomohiro, c/o Kawasaki Steel Corporation ,  Nakano, Tadashi, c/o Kawasaki Steel Corporation ,  Yamamoto, Hiroshi, c/o Kawasaki Steel Corporation

IPC分类号： H01L21/90 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/67017 ,  C23C16/0272 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/31051 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76837 ,  Y10S148/017 ,  Y10S438/974

摘要： In a method of manufacturing an insulating film of a semiconductor device by a chemical vapor deposition, a surface of a semiconductor wafer is treated with an organic compound such as ethanol and methanol, and then the semiconductor wafer is transported into a reaction chamber and an insulating film is deposited on the thus treated surface of the semiconductor wafer by a chemical vapor deposition using a raw material such as organic silicon compound. By treating the surface of the semiconductor wafer with the organic compound prior to the deposition, the filling capability and planarization of the insulating film are improved. Further the insulating film thus formed is free from voids and clacks, and an amount of water contained in the insulating film is very small. The treatment of the surface of the semiconductor wafer can be performed simply by spin coating, spaying, vapor exposing or dipping, so that the throughput can be improved. Moreover, a gas of said organic compound for treating the surface of the semiconductor wafer may be mixed with raw material gas and reaction gas in the reaction chamber.

摘要翻译： 在制造通过化学气相沉积绝缘的半导体装置的电影的方法，在半导体晶片的表面在有机化合物处理用：如乙醇和甲醇，然后将半导体晶片被输送到反应室中，并在绝缘 电影是通过使用原料的化学气相沉积沉积在半导体晶片的这样处理过的表面上：如有机硅化合物。 通过向沉积之前治疗与有机化合物的半导体晶片的表面，绝缘的填充能力和平坦化膜-得到改善。 此外，绝缘膜，由此形成由空隙和叨免费的，并且包含在该绝缘的水的量的膜是非常小的。 在半导体晶片的表面的处理可以简单地通过旋涂，喷施，蒸气暴露或浸渍来进行，所以做了能够提高吞吐量。 更完了，所述有机化合物的一种用于处理半导体晶片的表面上的气体可以与在反应室中的原料气体和反应气体混合。

公开(公告)号：EP0266268B1

公开(公告)日：1992-07-22

申请号：EP87402397.1

申请日：1987-10-23

申请人： Nissim, Yves ,  BENSOUSSAN, Marcel

发明人： Nissim, Yves ,  Bensoussan, Marcel

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/28

CPC分类号： H01L29/66522 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/28264 ,  H01L21/314 ,  H01L21/31608 ,  H01L21/3185

公开(公告)号：EP0316835A1

公开(公告)日：1989-05-24

申请号：EP88118922.9

申请日：1988-11-14

申请人： Oki Electric Industry Company, Limited

发明人： Fukuda, Hisashi

IPC分类号： H01L21/306 ,  H01L21/316

CPC分类号： H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/31662 ,  Y10S134/902 ,  Y10S438/906

摘要： For cleaning substrates in a cleaning device (10), a reaction furnace (14) of the cleaning device in which a substrate (12) has been installed is evacuated and then supplied with a reducing gas, and a natural oxide film on the substrate is removed by heating it in an atmosphere of reducing gas (32a), the reaction furnace is then evacuated and a reactive gas (32b) is introduced into the reaction furnace, and contaminants on the substrate are removed by etching the substrate in the reactive gas that has been chemically activated by UV radiation (22).

摘要翻译： 为了在清洁装置（10）中清洁基板，将其中已经安装了基板（12）的清洁装置的反应炉（14）抽真空，然后供给还原气体，并且在基板上的自然氧化膜是 通过在还原气体（32a）的气氛中加热除去反应炉，然后抽空反应炉，并将反应气体（32b）引入反应炉中，并通过在反应气体中蚀刻基板来除去基板上的污染物， 已被UV辐射化学活化（22）。

公开(公告)号：EP0225519A2

公开(公告)日：1987-06-16

申请号：EP86116093.5

申请日：1986-11-20

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Zorindky, Eldon J. ,  Spratt, David B.

IPC分类号： H01L21/82 ,  H01L21/76 ,  H01L21/316

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/306 ,  H01L21/31662 ,  H01L21/76245

摘要： A semiconductor structure has a high definition boundary between semiconductor islands (54) and an isolating sublayer (50) having a transition thickness less than 1500A. To form the structure a trench (62) is formed in a composite epitaxial layer (54) and an N + sublayer (50). The sublayer (50) is anodized and oxidized at a high pressure and low temperature environment, reducing updiffusion of the N + impurities into the epitaxial layer (54).

摘要翻译： 半导体结构在半导体岛（54）和过渡厚度小于1500A的隔离子层（50）之间具有高清晰度的边界。 为了形成结构，在复合外延层（54）和N +子层（50）中形成沟槽（62）。 子层（50）在高压低温环境下进行阳极氧化和氧化，从而将N +杂质向上延伸到外延层（54）中。

公开(公告)号：EP2770526B1

公开(公告)日：2018-10-03

申请号：EP13156397.5

申请日：2013-02-22

申请人： IMEC VZW

发明人： Delabie, Annelies ,  Caymax, Matty

IPC分类号： H01L21/316

CPC分类号： H01L29/02 ,  H01L21/02181 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/28211 ,  H01L21/28255 ,  H01L21/306

摘要： A Si or Ge semi-conductor substrate comprising an oxygen monolayer on a surface thereof, said oxygen monolayer being fractional or complete, wherein Si 4+ or Ge 4+ oxidation state of said surface of respectively the Si or Ge substrate resulting from the presence of said oxygen monolayer represents less than 50%, preferably less than 40% and more preferably less than 30% of respectively the sum of Si 1+ , Si 2+ , Si 3+ and Si 4+ oxidation states or the sum of Ge 1+ , Ge 2+ , Ge 3+ and Ge 4+ oxidation states as measured by XPS.

公开(公告)号：EP2770526A1

公开(公告)日：2014-08-27

申请号：EP13156397.5

申请日：2013-02-22

申请人： IMEC

发明人： Delabie, Annelies ,  Caymax, Matty

IPC分类号： H01L21/02 ,  H01L21/316

CPC分类号： H01L29/02 ,  H01L21/02181 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/28211 ,  H01L21/28255 ,  H01L21/306

摘要： A Si or Ge semi-conductor substrate comprising an oxygen monolayer on a surface thereof, said oxygen monolayer being fractional or complete, wherein Si 4+ or Ge 4+ oxidation state of said surface of respectively the Si or Ge substrate resulting from the presence of said oxygen monolayer represents less than 50%, preferably less than 40% and more preferably less than 30% of respectively the sum of Si 1+ , Si 2+ , Si 3+ and Si 4+ oxidation states or the sum of Ge 1+ , Ge 2+ , Ge 3+ and Ge 4+ oxidation states as measured by XPS.

摘要翻译： 一种Si或Ge半导体衬底，其在其表面上包含氧单层，所述氧单层是分数或完整的，其中分别由Si或Ge衬底的所述表面的Si 4+或Ge 4+氧化态由 所述氧单层表示Si 1 +，Si 2+，Si 3+和Si 4+氧化态的总和分别小于50％，优选小于40％，更优选小于30％，或者Ge 1+ ，Ge 2+，Ge 3+和Ge 4+氧化态。

公开(公告)号：EP1351283A4

公开(公告)日：2006-01-25

申请号：EP01999967

申请日：2001-12-04

申请人： TOKYO ELECTRON LTD

发明人： HISHIYA SHINGO ,  FURUSAWA YOSHIKAZU ,  HAYASHI TERUYUKI ,  SAITO MISAKO ,  UMEZAWA KOTA ,  SATO SYOICHI

IPC分类号： C30B33/00 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/316

CPC分类号： H01L21/02046 ,  C30B33/00 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/31138 ,  H01L21/31662 ,  H01L21/67109

摘要： An apparatus (1) for treating a wafer, which has a heater (12), a reaction tube (2) for storing a wafer (10) having an organic material adhered thereto and, a first gas conduit (13) and a second gas conduit (14) for feeding an oxygen gas and a hydrogen gas, respectively, into the reaction tube (2); and a method for treating a wafer to be treated, which comprises feeding an oxygen gas and a hydrogen gas through the first gas conduit (13) and the second gas conduit (14), respectively, into the reaction tube (2), and heating the reaction tube (2) by the heater (12) to a temperature sufficient for activating the oxygen gas and hydrogen gas, to thereby allow a combustion reaction to take place and oxidize, decompose and remove the organic material adhered to the wafer (10).