WINDOWLESS BELT AND METHOD FOR IN-SITU WAFER MONITORING
    2.
    发明授权
    WINDOWLESS BELT AND METHOD FOR IN-SITU WAFER MONITORING 有权
    WINDOW松散波兰BAND AND METHOD FOR现场监测半导体晶片

    公开(公告)号:EP1214174B1

    公开(公告)日:2004-02-11

    申请号:EP00954098.0

    申请日:2000-08-16

    摘要: A belt (12) for polishing a workpiece (11) such as a semiconductor wafer in a chemical mechanical polishing system (10) includes an endless belt. The belt (12) has an aperture (40). The aperture is unobstructed, such as using no window. The system (10) includes a belt (12), a first roller (14), a second roller (13), a platen (25), a polishing head (18), a slurry dispenser (21), a conditioner (20), a monitor (28) and a controller (30). One or more apertures (40) may be provided through the belt (12). Preferably, three apertures (40) are evenly spaced apart along the length of the belt (12). The apertures are positioned in the belt (12) between the edges (19). The monitor (28) uses the aperture (40) to measure a property of the wafer (11). The monitor (28) comprises a light emitting and reception device for determining the type of film and/or film thickness of the surface of the wafer (11).

    WINDOWLESS BELT AND METHOD FOR IN-SITU WAFER MONITORING
    3.
    发明公开
    WINDOWLESS BELT AND METHOD FOR IN-SITU WAFER MONITORING 有权
    WINDOW松散波兰BAND AND METHOD FOR现场监测半导体晶片

    公开(公告)号:EP1214174A1

    公开(公告)日:2002-06-19

    申请号:EP00954098.0

    申请日:2000-08-16

    摘要: A belt (12) for polishing a workpiece (11) such as a semiconductor wafer in a chemical mechanical polishing system (10) includes an endless belt. The belt (12) has an aperture (40). The aperture is unobstructed, such as using no window. The system (10) includes a belt (12), a first roller (14), a second roller (13), a platen (25), a polishing head (18), a slurry dispenser (21), a conditioner (20), a monitor (28) and a controller (30). One or more apertures (40) may be provided through the belt (12). Preferably, three apertures (40) are evenly spaced apart along the length of the belt (12). The apertures are positioned in the belt (12) between the edges (19). The monitor (28) uses the aperture (40) to measure a property of the wafer (11). The monitor (28) comprises a light emitting and reception device for determining the type of film and/or film thickness of the surface of the wafer (11).