摘要:
The present invention relates to a digital-to-analog converter having a plurality of inputs (B0,B1,B2,B3) for digital signals and an output (OUT) for an analog signal, and comprising a current amplification circuit (AMP) having an input (ND) and an output coupled to the converter output; and a plurality of floating gate MOS transistors (M01, M11, M21, M31) corresponding to the plurality of converter inputs and having their source terminals coupled together and to a first reference (GND) of potential, drain terminals coupled together and to the input (ND) of the amplification circuit (AMP), and control terminals coupleable, under control from the inputs of the plurality, to different references (GND,VCC) of potential having selected fixed values.
摘要:
The programmable reference voltage source (1) includes a nonvolatile memory cell (2), the floating-gate region (3) of which stores electric charges determining a memorized threshold value. The drain terminal (4) of the cell is biased at a constant voltage (D r ), and the source terminal (14) is connected to a constant-current source (21) and to the inverting input of an operational amplifier (21) having the noninverting input connected to a reference voltage (V r ) and the output (10) connected to the gate terminal (8) of the cell (2). By defining the threshold of the cell (2) as the gate voltage (measured with respect to ground) capable of causing the cell (2) to be flown by the current (I s ) set by the current source (22), the output voltage (V o ) of the operational amplifier (21) equals the threshold and may be used as a programmable reference in analog memories.
摘要:
The charge injection circuit of this invention comprises at least one pair of floating gate MOS transistors (M1,M2) having source and drain terminals which are coupled together and to an injection node (ND), and at least one corresponding pair of generators (G1,G2) of substantially step-like voltage signals (S1,S2) having an initial value and a final value, and having outputs respectively coupled to the control terminals of said transistors (M1,M2); the signal generators (G1,G2) being such that the initial value of a first (S1) of the signals is substantially the equal of the final value of a second (S2) of the signals, and that the final value of the first signal (S1) is substantially the equal of the initial value of the second signal (S2).
摘要:
The method of coding characters for word recognition in a word recognition device comprises the steps of: reading a plurality of known words (19); detecting morphological similarities between the characters of the alphabet forming the known words (20-22); associating with each character a weight (23), by associating morphologically similar characters with similar weights; and storing the weights in a data memory of the word recognition device. To detect the morphological similarity between the characters, a confusion table is determined, by plotting data relating to the probability of confusing a character belonging to the known words with other characters; on the basis of the confusion table, a similarity graph is determined in which the characters of the alphabet which can easily be confused with one another are connected by connection lines; and on the basis of the similarity graph, an adjacency list is determined, including the characters of the alphabet arranged by degree of reciprocal similarity. The weights are then fixed in such a way that similar weights correspond to adjacent characters in the adjacency list.
摘要:
The memory device includes an associative memory (10) for the storage of data belonging to a plurality of classes. The associative memory comprises a plurality of memory locations aligned along rows and columns for the storage of the data along the rows. Each memory row comprises a plurality of groups of memory locations each storing a respective datum, wherein groups of memory locations adjacent along one and the same row store data belonging to different classes, and groups of memory locations adjacent in the direction of the columns and disposed on different rows store data belonging to one and the same class. Each class comprises data having a different maximum length. The device is particularly suitable for the storage of words belonging to a dictionary for the automatic recognition of the words in a written text.
摘要:
The word recognition device (1) uses an associative memory (10) to store a plurality of coded words in such a way that a weight is associated with each character of the alphabet of the stored words, wherein equal weights correspond to equal characters. To perform the recognition, a dictionary of words is first chosen (30); this is stored (31, 32) in the associative memory according to a pre-determined code; a string of characters which correspond to a word to be recognized is received; a sequence of weights corresponding to the string of characters received is supplied (33) to the associative memory; the distance between the word to be recognized and at least some of the stored words is calculated in parallel (34) as the sum of the difference between the weights of each character of the word to be recognized and the weights of each character of the stored words; the minimum distance is identified; and the word stored in the associative memory having the minimum distance is stored (35).
摘要:
The present invention relates to an analog voltage-signal selector device of the type comprising at least one plurality of comparator circuits (Ci) operating in parallel and each having at least a first and second input terminals and designed to receive respectively an analog voltage-comparison signal (RAMP) and analog voltage signals (Vi) of predetermined value and at least one output terminal for digital voltage signals (Voi). This selector device 1 also comprises at least one logic circuit (L) having a plurality of input terminals each connected to a corresponding output terminal of the comparator circuits (Ci) and at least one output terminal. Finally said selector 1 incorporates at least one plurality of latches (Mi) each having at least one input terminal connected to the output terminal of a corresponding comparator circuit (Ci) and at least one drive terminal coupled to the output terminal of the logic circuit (L) with each of said memory circuits (Mi) having at least one output terminal corresponding to an output of the selector.
摘要:
This invention relates to a voltage comparator with an input (Vin) for an analog signal and an output (Vout) for a digital signal, comprising an inverter (P1,IG) which has an input coupled to the comparator input and an output coupled to the comparator output, and comprising at least two MOS transistors (P1,IG) coupled to each other, at least one (IG) of the two MOS transistors being of the floating gate type.
摘要:
The present invention relates to a digital-to-analog converter having a plurality of inputs (B0,B1,B2,B3) for digital signals, and an output (OUT) for an analog signal, and comprising a charge integration circuit (INT) having an input and an output coupled to the converter output, and a plurality of floating gate MOS transistors (M01, M11,M21,M31) corresponding to the plurality of converter inputs, having their source and drain terminals coupled all together and to the input (ND) of the integration circuit (INT), and having control terminals coupleable, under control from the inputs of the plurality, to different references (VCC,GND) of potential having selected fixed values.
摘要:
An input structure (1) for associative memories, including an array of elementary cells (2), a number of input lines (20), a number of output lines (30), a number of address lines (40), and a number of enabling lines (50). Each elementary cell (2) is formed by a D type latch (3) having a data input connected to one of the address lines (40) and an enabling input connected to one of the enabling lines (50), and by a switch (4) connected between an input line and an output line, and having a control input connected to the output of a respective latch to selectively connect the respective input line (20) and output line (30) according to the data stored in the latch.