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公开(公告)号：EP0866151A1
公开(公告)日：1998-09-23
申请号：EP98301794.8
申请日：1998-03-11
发明人： Iida, Makoto , Iino, Eiichi , Kimura, Masanori , Muraoka, Shozo
CPC分类号： C30B15/30 , Y10T117/1072
摘要： In a crystal holding apparatus, a corrugated portion between a seed crystal and a straight cylindrical portion of a monocrystal is held by holding portions of a lifting jig during a monocrystal growth process in which the seed crystal is brought into contact with material melt and is subsequently pulled while being rotated. In the crystal holding apparatus, an attachment member for establishing surface contact with the corrugated portion of the crystal is attached to the tip end of each holding portion of the lifting jig. Therefore, the monocrystal can be held reliably, so that the breaking and falling down of the monocrystal during the pulling operation can be prevented.
摘要翻译： 在晶体保持装置中，晶种与单晶的直圆柱形部分之间的波纹状部分通过在晶体与材料熔体接触的单晶生长工艺期间保持提升夹具的部分来保持，随后 在旋转的同时拉。 在晶体保持装置中，在提升夹具的每个保持部分的末端安装有用于与晶体的波纹部分表面接触的附接构件。 因此，可以可靠地保持单晶，从而可以防止在牵引操作期间单晶的断裂和落下。
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2.发明公开Nitrogen doped single crystal silicon wafer with few defects and method for its production 有权氮掺杂的单晶硅晶片具有用于它们的制备低缺陷和过程
公开(公告)号：EP0962556A1
公开(公告)日：1999-12-08
申请号：EP99109252.9
申请日：1999-05-26
CPC分类号： C30B29/06 , C30B15/203 , Y10S117/917
摘要： There is disclosed a method for producing a silicon single crystal wafer characterized in that a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm 2 /°C · min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient(°C/mm) along the pulling direction within a temperature range of the melting point of silicon to 1400°C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.
摘要翻译： 有圆盘游离缺失的制造方法中那样的硅单晶在与在N-区域掺杂氮的缺陷分布图中的CZ法雅舞蹈生长其示出了缺陷分布为特征的一单晶硅晶片，其中水平轴 从晶体的中心darstellt的径向距离D（毫米），纵轴表示的F / G的值（毫米<2> /℃，分钟），其中F是的提拉速度（mm /分钟） 单晶，并且G是一个平均帧内晶体温度梯度（℃/ mm）的沿的温度范围内硅的熔点的至1400℃内的拉动方向有可以提供制造硅单晶的方法 晶片由正区域，其中既不是富V区也不富I区域是存在于由CZ法的晶体的整个表面上，在该状态下也可以容易地在宽范围内控制的，以高收率，并在高 生产力。
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公开(公告)号：EP0900862A1
公开(公告)日：1999-03-10
申请号：EP98306369.4
申请日：1998-08-10
发明人： Iida, Makoto , Iino, Eiichi , Kimura, Masanori , Muraoka, Shozo
IPC分类号： C30B15/32
CPC分类号： C30B15/32 , Y10S117/90 , Y10S117/911 , Y10T117/10 , Y10T117/1072
摘要： A seed crystal holder used in a crystal pulling apparatus operated in accordance with the Czochralski method. In the seed crystal holder, a heat-resistant cushioning material is provided between the surface of a seed crystal and the contact surface of claws of the holder or between a cutaway surface of the seed crystal and a contact surface of an insert of the holder. The heat-resistant cushioning material is selected from the group consisting of carbon fiber felt, glass fiber felt, metallic fiber felt, or selected from materials that cause plastic deformation such as Al.
摘要翻译： 用于根据切克劳斯基方法操作的晶体拉制装置中的晶种支架。 在种子晶体保持器中，在晶种的表面和保持器的爪的接触表面之间或晶种的切除表面与保持器的插入物的接触表面之间设置耐热缓冲材料。 耐热缓冲材料选自碳纤维毡，玻璃纤维毡，金属纤维毡，或选自引起塑性变形的材料如Al。
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公开(公告)号：EP0831158A3
公开(公告)日：1998-07-22
申请号：EP97306982.6
申请日：1997-09-09
发明人： Iino, Eiichi , Iida, Makoto , Kimura, Masanori , Muraoka, Shozo
IPC分类号： C30B15/30
CPC分类号： C30B15/32 , C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight (W kg) of the crystal satisfies the following Formula (1): W 2 / 4 where D designates the minimum diameter (mm) of a neck. This makes it possible to pull a heavy monocrystal safely and reliably.
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5.发明授权Nitrogen doped single crystal silicon wafer with few defects and method for its production 有权氮掺杂的单晶硅晶片具有用于它们的制备低缺陷和过程
公开(公告)号：EP0962556B1
公开(公告)日：2004-03-24
申请号：EP99109252.9
申请日：1999-05-26
CPC分类号： C30B29/06 , C30B15/203 , Y10S117/917
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公开(公告)号：EP0834607B1
公开(公告)日：1999-11-03
申请号：EP97307318.2
申请日：1997-09-19
发明人： Iino, Eiichi , Iida, Makoto , Kimura, Masanori , Muraoka, Shozo
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032
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公开(公告)号：EP0837160A1
公开(公告)日：1998-04-22
申请号：EP97308001.3
申请日：1997-10-09
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , Y10T117/1032 , Y10T117/1072
摘要： In a crystal pulling method in which a growing single crystal is initially pulled by a seed chuck and subsequently pulled by lifting jig in the middle of the pulling operation, the speed Va of the seed chuck relative to the lifting jig is decreased, while the rising speed Vb of the lifting jig increases, from a first point where switching of the pulling mechanism from the seed chuck to the lifting jig is started. The total speed Vt = Vb + Va is constantly maintained at a desired pulling speed V up to a third point where the shifting of the load from the seed chuck to the lifting jig is started. Subsequently, the total speed Vt is made less than the desired pulling speed V from the third point where the shifting of the load from the seed shuck to the lifting jig is started. This enables accurate growth of a crystal.
摘要翻译： 在采用种子卡盘最初牵引生长的单晶并随后在牵引操作中间通过提升夹具拉动的晶体拉制方法中，种子卡盘相对于提升夹具的速度Va降低，而上升 从拉动机构从种子卡盘切换到提升夹具的第一点开始升降夹具的速度Vb增加。 总速度Vt = Vb + Va恒定地保持在期望的牵引速度V，直到负载从种子卡盘到提升夹具的移动开始的第三点。 随后，使总速度Vt小于从种子撞击到提升夹具的负载偏移开始的第三点的期望拉速V。 这使得晶体的准确生长。
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公开(公告)号：EP0831158B1
公开(公告)日：2002-05-08
申请号：EP97306982.6
申请日：1997-09-09
发明人： Iino, Eiichi , Iida, Makoto , Kimura, Masanori , Muraoka, Shozo
IPC分类号： C30B15/30
CPC分类号： C30B15/32 , C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
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公开(公告)号：EP0866151B1
公开(公告)日：2001-07-11
申请号：EP98301794.8
申请日：1998-03-11
发明人： Iida, Makoto , Iino, Eiichi , Kimura, Masanori , Muraoka, Shozo
CPC分类号： C30B15/30 , Y10T117/1072
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公开(公告)号：EP0834607A1
公开(公告)日：1998-04-08
申请号：EP97307318.2
申请日：1997-09-19
发明人： Iino, Eiichi , Iida, Makoto , Kimura, Masanori , Muraoka, Shozo
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032
摘要： A method and an apparatus for pulling a single crystal are disclosed. A neck portion, a corrugated portion, and a single crystal are formed below a seed crystal held by a seed chuck. When the corrugated portion is raised to a predetermined position (where lifting jig can hold the corrugated portion) by the seed chuck, the rising speed Va of the seed chuck is reduced, and a slider that supports a seed chuck lifting mechanism is raised at a speed Vb in order to maintain a constant pulling speed of the single crystal. Eventually, the pulling by the seed chuck is switched to the pulling by the slider. Subsequently, the lifting jig provided on the slider is raised slightly by a moving mechanism so that the crystal holding portions of the lifting jig are brought into contact with the corrugated portion and 1 - 50% of the weight of the crystal is shifted to the lifting jig. This enables safe and accurate growth of a heavy single crystal in accordance with, for example, the CZ method
摘要翻译： 公开了一种拉制单晶的方法和装置。 在由种子卡盘保持的晶种的下方形成颈部，波纹状部分和单晶。 当波纹部分通过种子卡盘升高到预定位置（其中提升夹具可以保持波纹部分）时，种子卡盘的上升速度Va降低，并且支撑种子卡盘提升机构的滑块在 速度Vb以保持单晶的恒定牵引速度。 最终，种子卡盘的拉动被切换到由滑块拉动。 随后，设置在滑块上的提升夹具通过移动机构稍微升高，使得提升夹具的晶体保持部分与波纹部分接触，并且晶体重量的1-50％转移到提升 夹具。 这使得可以根据例如CZ方法安全且准确地生长重单晶
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