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1.发明公开An apparatus and a method for growing a single crystal 失效Eine Vorrichtung und Verfahren zum Wachsen von Einkristallen
公开(公告)号：EP0781866A2
公开(公告)日：1997-07-02
申请号：EP96120851.9
申请日：1996-12-23
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus for growing a single crystal which comprises a quartz crucible in a chamber for containing a semiconductor melt from which a semiconductor single crystal rod is pulled, wherein there further comprises a cylinder concentrically surrounding the single crystal rod to be pulled whose top is connected to the edge of the opening at the center of the ceiling of the chamber in an airtight fashion and whose bottom hangs down toward the semiconductor melt, and a collar which spreads open upward and outward and whose outer circumferential part extends above the top end of the quartz crucible wherein the outer circumferential part is situated such that it does not touch the top end of the quartz crucible when said quartz crucible is at its highest position.
摘要翻译： 一种用于生长单晶的装置，其包括在用于容纳半导体熔融物的室中的石英坩埚，所述半导体熔体从其拉出半导体单晶棒，其中还包括圆筒同心地围绕待拉的单晶棒，其顶部连接到 开口的边缘以气密的方式在室的顶部的中心处，并且其底部朝向半导体熔体向下悬垂，以及一个向上和向外敞开并且其外圆周部分在石英的顶端上方延伸的轴环 坩埚，其中外圆周部分被定位成使得当所述石英坩埚处于其最高位置时，其不接触石英坩埚的顶端。
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公开(公告)号：EP0610065B1
公开(公告)日：1996-09-04
申请号：EP94300740.1
申请日：1994-02-01
CPC分类号： C30B15/02 , C30B15/12 , Y10S117/90 , Y10T117/1052
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公开(公告)号：EP0834607B1
公开(公告)日：1999-11-03
申请号：EP97307318.2
申请日：1997-09-19
发明人： Iino, Eiichi , Iida, Makoto , Kimura, Masanori , Muraoka, Shozo
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032
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4.发明授权PROCESS FOR PROCEEDING A SILICON SINGLE CRYSTAL WITH LOW DEFECT DENSITY 失效用于生产SILIZIUMEINKRISTALLES与NIEDIGER错误密度
公开(公告)号：EP0747513B1
公开(公告)日：1999-09-15
申请号：EP96303989.6
申请日：1996-06-03
发明人： Takano, Kiyotaka , Kitagawa, Kouji , Iino, Eiichi , Kimura, Masanori , Yamagishi, Hirotoshi , Sakurada, Masahiro
CPC分类号： C30B29/06 , C30B15/206
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5.发明授权Method for the preparation of a single crystal of silicon with decreased crystal defects 失效一种用于具有减少的结晶缺陷产生的单晶硅的方法
公开(公告)号：EP0716168B1
公开(公告)日：1999-03-17
申请号：EP95118734.3
申请日：1995-11-29
IPC分类号： C30B15/14
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1032
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公开(公告)号：EP0900862A1
公开(公告)日：1999-03-10
申请号：EP98306369.4
申请日：1998-08-10
发明人： Iida, Makoto , Iino, Eiichi , Kimura, Masanori , Muraoka, Shozo
IPC分类号： C30B15/32
CPC分类号： C30B15/32 , Y10S117/90 , Y10S117/911 , Y10T117/10 , Y10T117/1072
摘要： A seed crystal holder used in a crystal pulling apparatus operated in accordance with the Czochralski method. In the seed crystal holder, a heat-resistant cushioning material is provided between the surface of a seed crystal and the contact surface of claws of the holder or between a cutaway surface of the seed crystal and a contact surface of an insert of the holder. The heat-resistant cushioning material is selected from the group consisting of carbon fiber felt, glass fiber felt, metallic fiber felt, or selected from materials that cause plastic deformation such as Al.
摘要翻译： 用于根据切克劳斯基方法操作的晶体拉制装置中的晶种支架。 在种子晶体保持器中，在晶种的表面和保持器的爪的接触表面之间或晶种的切除表面与保持器的插入物的接触表面之间设置耐热缓冲材料。 耐热缓冲材料选自碳纤维毡，玻璃纤维毡，金属纤维毡，或选自引起塑性变形的材料如Al。
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公开(公告)号：EP0831158A3
公开(公告)日：1998-07-22
申请号：EP97306982.6
申请日：1997-09-09
发明人： Iino, Eiichi , Iida, Makoto , Kimura, Masanori , Muraoka, Shozo
IPC分类号： C30B15/30
CPC分类号： C30B15/32 , C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight (W kg) of the crystal satisfies the following Formula (1): W 2 / 4 where D designates the minimum diameter (mm) of a neck. This makes it possible to pull a heavy monocrystal safely and reliably.
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公开(公告)号：EP0821083A1
公开(公告)日：1998-01-28
申请号：EP97304827.5
申请日：1997-07-02
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , C30B15/22 , Y10T117/1032 , Y10T117/1072
摘要： A method and an apparatus for pulling a single crystal are disclosed. A first neck portion, a convex portion, and a second neck portion are formed in this order under a seed crystal held by a seed chuck, and subsequent to the second neck portion, a single crystal having a diameter-expanding portion and a straight cylindrical portion is formed. Lifting holders are brought around and in proximity to the second neck portion when the second neck portion rises to a predetermined position during the pulling by the seed chuck. The single crystal and the lifting holders are moved relative to each other in the vertical direction to thereby bring the convex portion into contact with the lifting holders in a resting manner, so that part of a load borne by the seed chuck is shifted to the lifting holders. Subsequently, the pulling operation is performed by the lifting holders. Accordingly, a single crystal having a larger weight can be pulled safely while maintaining high quality.
摘要翻译： 公开了一种拉制单晶的方法和装置。 在由种子卡盘保持的晶种下依次形成第一颈部，凸部和第二颈部，在第二颈部之后，形成具有直径扩大部和直圆筒状的单晶 形成部分。 当通过种子卡盘拉动时，当第二颈部部分升高到预定位置时，提升架被带到第二颈部附近并且靠近第二颈部部分。 单晶和提升架在垂直方向上相对于彼此移动，从而使凸部以静止的方式与升降保持器接触，使得由种子卡盘承载的部分负载转移到提升 持有人。 随后，拉升操作由提升架执行。 因此，可以在保持高质量的同时安全地拉伸重量更大的单晶。
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公开(公告)号：EP0747514A1
公开(公告)日：1996-12-11
申请号：EP96304265.0
申请日：1996-06-07
IPC分类号： C30B15/00
CPC分类号： C30B15/00 , Y10S117/90 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： Arranged is a covering plate which closes and opens an entrance of a valve container between a lower chamber and an upper chamber, the lower chamber containing a crucible and the upper chamber containing a wire to pull a single crystal. The covering plate is contained in a circle-shaped space portion within a wall by closing and opening means. The covering plate closes the entrance so that an isolation valve is protected. Since at the time of opening the entrance the covering plate is contained within the wall without contacting with the wall, the fall of dusts produced by peeling off of a film deposited on the wall can be prevented. Furthermore, the covering plate is contained in a circle-shaped space portion without exposing the front and back surfaces thereof to the air.
摘要翻译： 布置有一个盖板，其关闭并打开下腔室和上腔室之间的阀门容器的入口，下腔室包含坩埚，上腔室包含用于拉动单晶的金属丝。 盖板通过关闭和打开装置容纳在墙内的圆形空间部分中。 盖板关闭入口，以保护隔离阀。 由于在打开入口时盖板容纳在壁内而不与壁接触，所以可以防止由于沉积在壁上的膜剥落而产生的灰尘落下。 此外，盖板在其正面和背面不暴露于空气的情况下容纳在圆形空间部分中。
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10.发明公开Method for the preparation of a single crystal of silicon with decreased crystal defects 失效Verfahren zur Herstellung eines Silizium-Einkristalles mit verringerten Kristalldefekten
公开(公告)号：EP0716168A1
公开(公告)日：1996-06-12
申请号：EP95118734.3
申请日：1995-11-29
IPC分类号： C30B15/14
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1032
摘要： An improvement is proposed in the single crystal growing process of semiconductor silicon in the Czochralski process to obtain a silicon single crystal having a greatly decreased number of crystal defects without affecting the productivity. The improvement can be accomplished by an adequate arrangement of the cooling zone of the single crystal growing puller to have such a temperature distribution that the time taken by the growing single crystal to pass through the temperature range from the melting point of silicon to 1200 °C is from 50 minutes to 200 minutes and the time taken by the growing single crystal to pass through the temperature range from 1200 °C to 1000 °C does not exceed 130 minutes.
摘要翻译： 在Czochralski工艺中在半导体硅的单晶生长工艺中提出了一种改进，以获得晶体缺陷数量大大降低而不影响生产率的硅单晶。 可以通过单晶生长拉拔器的冷却区的适当布置来实现改进，以具有这样的温度分布，使得生长的单晶经过从硅的熔点到1200℃的温度范围所花费的时间 是从50分钟到200分钟，并且生长的单晶通过1200℃至1000℃的温度所花费的时间不超过130分钟。
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