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1.发明公开Photoresist pattern fabrication employing chemically amplified metalized material 失效使用化学放大金属化材料的光电子图案制造
公开(公告)号：EP0352739A3
公开(公告)日：1991-09-11
申请号：EP89113699.6
申请日：1989-07-25
Applicant: SHIPLEY COMPANY INC.
Inventor： Thackeray, James W. , Fine, Stephen A.
CPC classification number: G03F7/022 , G03F7/0041 , G03F7/0755 , G03F7/09 , G03F7/265
Abstract: The present invention is directed to a method for the formation and dry development of photoresists treated only in a thin layer ( i.e. , approx. 2000 Angstroms thick) so as to be treated with an organometallic material. Treatment of this thin layer of the resist formulation in the process of the present invention is preferably accomplished by the vapor phase exposure of the resist formulation to an organometallic material such as a silylating compound capable of reacting with the resist formulation. The resist formulation also contains a photoacid generator, capable of releasing an acid which either causes the hydrolysis of the exposed portions of the resist that were created with organometallic vapor, or prevents the reaction of the organometallic vapor with the exposed portion of the resist.
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2.发明授权Photoresist pattern fabrication employing chemically amplified metalized material 失效一种用于生产使用化学放大和金属化材料光致抗蚀剂结构的过程
公开(公告)号：EP0352739B1
公开(公告)日：1995-12-27
申请号：EP89113699.6
申请日：1989-07-25
Applicant: SHIPLEY COMPANY INC.
Inventor： Thackeray, James W. , Fine, Stephen A.
CPC classification number: G03F7/022 , G03F7/0041 , G03F7/0755 , G03F7/09 , G03F7/265
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3.发明公开Photoresist pattern fabrication employing chemically amplified metalized material 失效一种用于生产使用化学放大和金属化材料光致抗蚀剂结构的过程。
公开(公告)号：EP0352739A2
公开(公告)日：1990-01-31
申请号：EP89113699.6
申请日：1989-07-25
Applicant: SHIPLEY COMPANY INC.
Inventor： Thackeray, James W. , Fine, Stephen A.
CPC classification number: G03F7/022 , G03F7/0041 , G03F7/0755 , G03F7/09 , G03F7/265
Abstract: The present invention is directed to a method for the formation and dry development of photoresists treated only in a thin layer ( i.e. , approx. 2000 Angstroms thick) so as to be treated with an organometallic material. Treatment of this thin layer of the resist formulation in the process of the present invention is preferably accomplished by the vapor phase exposure of the resist formulation to an organometallic material such as a silylating compound capable of reacting with the resist formulation. The resist formulation also contains a photoacid generator, capable of releasing an acid which either causes the hydrolysis of the exposed portions of the resist that were created with organometallic vapor, or prevents the reaction of the organometallic vapor with the exposed portion of the resist.
Abstract translation: 本发明涉及用于干燥光致抗蚀剂只在薄层（即，约2000埃厚）治疗的形成和发展，以便与有机金属材料进行处理的方法。 此薄的本发明的方法中抗蚀剂配制剂的层的处理优选通过将抗蚀剂配制剂的气相接触在有机金属材料实现：诸如能够与抗蚀剂配制剂反应的甲硅烷基化化合物。 该抗蚀剂从而制剂包含光酸产生剂，能够在酸释放的其中或者引起与有机金属蒸气产生的抗蚀剂thatwere的暴露部分的水解，或防止有机金属蒸气与抗蚀剂的曝光部分的反应。
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