Abstract:
The invention is for a negative-acting, acid hardenable, deep UV photoresist comprising a phenolic resin having ring bonded hydroxyl sites, a thermally activated crosslinking agent that is an etherified aminoplast and a photoacid generator. The invention is characterized by control of the molar ratio of the ring bonded hydroxyl groups of the phenolic resin to the ether groups of the aminoplast which permits optimization of the properties such as optical absorbance, dissolution rate, photospeed, contrast, resolution and sidewall angle.
Abstract:
The invention is for a negative-acting, acid hardenable, deep UV photoresist comprising a phenolic resin having ring bonded hydroxyl sites, a thermally activated crosslinking agent that is an etherified aminoplast and a photoacid generator. The invention is characterized by control of the molar ratio of the ring bonded hydroxyl groups of the phenolic resin to the ether groups of the aminoplast which permits optimization of the properties such as optical absorbance, dissolution rate, photospeed, contrast, resolution and sidewall angle.
Abstract:
Antihalation compositions and methods for reducing the reflection of exposure radiation of a photoresist overcoated said compositions. The antihalation compositions of the invention comprise a resin binder and material capable of causing a thermally induced crosslinking reaction of the resin binder.
Abstract:
Antihalation compositions and methods for reducing the reflection of exposure radiation of a photoresist overcoated said compositions. The antihalation compositions of the invention comprise a resin binder and material capable of causing a thermally induced crosslinking reaction of the resin binder.
Abstract:
The present invention is directed to a method for the formation and dry development of photoresists treated only in a thin layer ( i.e. , approx. 2000 Angstroms thick) so as to be treated with an organometallic material. Treatment of this thin layer of the resist formulation in the process of the present invention is preferably accomplished by the vapor phase exposure of the resist formulation to an organometallic material such as a silylating compound capable of reacting with the resist formulation. The resist formulation also contains a photoacid generator, capable of releasing an acid which either causes the hydrolysis of the exposed portions of the resist that were created with organometallic vapor, or prevents the reaction of the organometallic vapor with the exposed portion of the resist.