Acid hardened photoresists
    2.
    发明公开
    Acid hardened photoresists 失效
    酸硬化光电

    公开(公告)号:EP0462391A3

    公开(公告)日:1992-01-22

    申请号:EP91107484.7

    申请日:1991-05-08

    CPC classification number: G03F7/0295 G03F7/038

    Abstract: The invention is for a negative-acting, acid hardenable, deep UV photoresist comprising a phenolic resin having ring bonded hydroxyl sites, a thermally activated crosslinking agent that is an etherified aminoplast and a photoacid generator. The invention is characterized by control of the molar ratio of the ring bonded hydroxyl groups of the phenolic resin to the ether groups of the aminoplast which permits optimization of the properties such as optical absorbance, dissolution rate, photospeed, contrast, resolution and sidewall angle.

    Acid hardened photoresists
    6.
    发明公开
    Acid hardened photoresists 失效
    SäuregehärtetePhotoresiste。

    公开(公告)号:EP0462391A2

    公开(公告)日:1991-12-27

    申请号:EP91107484.7

    申请日:1991-05-08

    CPC classification number: G03F7/0295 G03F7/038

    Abstract: The invention is for a negative-acting, acid hardenable, deep UV photoresist comprising a phenolic resin having ring bonded hydroxyl sites, a thermally activated crosslinking agent that is an etherified aminoplast and a photoacid generator. The invention is characterized by control of the molar ratio of the ring bonded hydroxyl groups of the phenolic resin to the ether groups of the aminoplast which permits optimization of the properties such as optical absorbance, dissolution rate, photospeed, contrast, resolution and sidewall angle.

    Abstract translation: 本发明涉及一种负性,酸可硬化的深UV光致抗蚀剂,其包含具有环键羟基位点的酚醛树脂,作为醚化氨基塑料的热活化交联剂和光酸产生剂。 本发明的特征在于控制酚醛树脂的环键羟基与氨基塑料的醚基团的摩尔比,其允许优化诸如光吸收率,溶解速率,感光速度,对比度,分辨率和侧壁角度的性质。

    Antihalation compositions
    7.
    发明公开
    Antihalation compositions 失效
    抗晕组合物

    公开(公告)号:EP0763781A3

    公开(公告)日:1997-07-16

    申请号:EP96116990.1

    申请日:1992-10-22

    CPC classification number: G03F7/091 G03F7/038 G03F7/38

    Abstract: Antihalation compositions and methods for reducing the reflection of exposure radiation of a photoresist overcoated said compositions. The antihalation compositions of the invention comprise a resin binder and material capable of causing a thermally induced crosslinking reaction of the resin binder.

    Abstract translation: 用于减少光致抗蚀剂的曝光辐射反射的防光晕组合物和方法在所述组合物上涂覆。 本发明的防光晕组合物包含树脂粘合剂和能够引起树脂粘合剂的热诱导交联反应的材料。

    Antihalation compositions
    8.
    发明公开
    Antihalation compositions 失效
    Antireflexionszusammensetzungen

    公开(公告)号:EP0763781A2

    公开(公告)日:1997-03-19

    申请号:EP96116990.1

    申请日:1992-10-22

    CPC classification number: G03F7/091 G03F7/038 G03F7/38

    Abstract: Antihalation compositions and methods for reducing the reflection of exposure radiation of a photoresist overcoated said compositions. The antihalation compositions of the invention comprise a resin binder and material capable of causing a thermally induced crosslinking reaction of the resin binder.

    Abstract translation: 用于减少光致抗蚀剂外涂层的曝光辐射的反射的抗晕化组合物和方法。 本发明的防光组合物包括树脂粘合剂和能够引起树脂粘合剂的热诱导交联反应的材料。

    Photoresist pattern fabrication employing chemically amplified metalized material
    9.
    发明公开
    Photoresist pattern fabrication employing chemically amplified metalized material 失效
    一种用于生产使用化学放大和金属化材料光致抗蚀剂结构的过程。

    公开(公告)号:EP0352739A2

    公开(公告)日:1990-01-31

    申请号:EP89113699.6

    申请日:1989-07-25

    CPC classification number: G03F7/022 G03F7/0041 G03F7/0755 G03F7/09 G03F7/265

    Abstract: The present invention is directed to a method for the formation and dry development of photoresists treated only in a thin layer ( i.e. , approx. 2000 Angstroms thick) so as to be treated with an organometallic material. Treatment of this thin layer of the resist formulation in the process of the present invention is preferably accomplished by the vapor phase exposure of the resist formulation to an organometallic material such as a silylating compound capable of reacting with the resist formulation. The resist formulation also contains a photoacid generator, capable of releasing an acid which either causes the hydrolysis of the exposed portions of the resist that were created with organometallic vapor, or prevents the reaction of the organometallic vapor with the exposed portion of the resist.

    Abstract translation: 本发明涉及用于干燥光致抗蚀剂只在薄层(即,约2000埃厚)治疗的形成和发展,以便与有机金属材料进行处理的方法。 此薄的本发明的方法中抗蚀剂配制剂的层的处理优选通过将抗蚀剂配制剂的气相接触在有机金属材料实现:诸如能够与抗蚀剂配制剂反应的甲硅烷基化化合物。 该抗蚀剂从而制剂包含光酸产生剂,能够在酸释放的其中或者引起与有机金属蒸气产生的抗蚀剂thatwere的暴露部分的水解,或防止有机金属蒸气与抗蚀剂的曝光部分的反应。

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