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公开(公告)号：EP1021832A1
公开(公告)日：2000-07-26
申请号：EP98954227.9
申请日：1998-09-25
发明人： SEZI, Recai , SEBALD, Michael , GROSS, Gerhard
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/5329 , H01L21/76802 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The invention relates to a semiconductor element with a polybenzoxalole-based polymer insulating layer. The invention also relates to a method for producing a semiconductor component whereby a polybenzoxalole-based polymer is used as a dielectric.
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公开(公告)号：EP0797792B1
公开(公告)日：1998-11-18
申请号：EP95929737.5
申请日：1995-09-01
发明人： SEZI, Recai , LEUSCHNER, Rainer , SCHMIDT, Erwin
CPC分类号： G03F7/265 , G03F7/0226 , G03F7/0233 , Y10S430/12
摘要： The invention concerns a photolithographic method of producing sub-micron structural features by applying to a substrate a photosensitive-resist layer consisting of a polymer containing carboxylic acid anhydride groups and tert.-butyl ester or tert.-butoxycarbonyloxy groups, a photosensitive component (in the form of an ester of naphthoquinonediazide-4-sulphonic acid and an aromatic or aliphatic-aromatic hydroxy compound) and a suitable solvent. The photoresist is then dried, illuminated in accordance with the circuit drawing and heated at a temperature between 120 and 150 DEG C for 100 to 600 s, after which the photoresist layer is subjected to liquid silylation and dry-developed in an anisotropic oxygen plasma.
摘要翻译： 本发明涉及一种通过在基底上涂覆由含有羧酸酐基团和叔丁基酯或叔丁氧基羰氧基团的聚合物组成的光敏抗蚀剂层，光敏组分（在 萘醌二叠氮化物-4-磺酸与芳族或脂族 - 芳族羟基化合物的酯的形式）和合适的溶剂。 然后干燥光刻胶，根据电路图进行照明，并在120-150℃的温度下加热100-600秒，然后将光刻胶层进行液体甲硅烷基化并在各向异性氧等离子体中干显影。
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公开(公告)号：EP0781424A1
公开(公告)日：1997-07-02
申请号：EP95929739.0
申请日：1995-09-01
发明人： SEZI, Recai , LEUSCHNER, Rainer , SCHMIDT, Erwin
CPC分类号： G03F7/022 , G03F7/0233 , Y10S430/12
摘要： The invention concerns a photolithographic method of producing sub-micron structural features by applying to a substrate a photosensitive resist layer consisting of a polymer containing tert.-butyl ester or tert.-butoxycarbonyloxy groups, a photosensitive component (in the form of an ester of naphthoquinonediazide-4-sulphonic acid and an aromatic hydroxy compound) and a suitable solvent. The photoresist is then dried, illuminated imagewise, heated at a temperature between 120 and 150 °C for 100 to 600 s and wet-developed (single-layer resist system). The invention also concerns a method in which an analogous two-layer resist system is used.
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公开(公告)号：EP0760971B1
公开(公告)日：1999-08-04
申请号：EP95918519.0
申请日：1995-05-11
发明人： SEZI, Recai , LEUSCHNER, Rainer , BORNDÖRFER, Horst , RISSEL, Eva-Maria , SEBALD, Michael , AHNE, Hellmut , BIRKLE, Siegfried , KÜHN, Eberhard
IPC分类号： G03F7/038
CPC分类号： G03F7/038 , Y10S430/115
摘要： A dry-developable positively acting TSI resist contains the following components: a suitable solvent; a strong acid former as the photo-active component; and a basic polymer in the form of a copolymer or terpolymer with maleic acid anhydride as a basic component and glycidyl methacrylate and/or a styrene derivative as a further component and possibly an additive.
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公开(公告)号：EP0797792A1
公开(公告)日：1997-10-01
申请号：EP95929737.0
申请日：1995-09-01
发明人： SEZI, Recai , LEUSCHNER, Rainer , SCHMIDT, Erwin
CPC分类号： G03F7/265 , G03F7/0226 , G03F7/0233 , Y10S430/12
摘要： The invention concerns a photolithographic method of producing sub-micron structural features by applying to a substrate a photosensitive-resist layer consisting of a polymer containing carboxylic acid anhydride groups and tert.-butyl ester or tert.-butoxycarbonyloxy groups, a photosensitive component (in the form of an ester of naphthoquinonediazide-4-sulphonic acid and an aromatic or aliphatic-aromatic hydroxy compound) and a suitable solvent. The photoresist is then dried, illuminated in accordance with the circuit drawing and heated at a temperature between 120 and 150 °C for 100 to 600 s, after which the photoresist layer is subjected to liquid silylation and dry-developed in an anisotropic oxygen plasma.
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公开(公告)号：EP0760971A1
公开(公告)日：1997-03-12
申请号：EP95918519.0
申请日：1995-05-11
发明人： SEZI, Recai , LEUSCHNER, Rainer , BORNDÖRFER, Horst , RISSEL, Eva-Maria , SEBALD, Michael , AHNE, Hellmut , BIRKLE, Siegfried , KÜHN, Eberhard
IPC分类号： G03F7
CPC分类号： G03F7/038 , Y10S430/115
摘要： A dry-developable positively acting TSI resist contains the following components: a suitable solvent; a strong acid former as the photo-active component; and a basic polymer in the form of a copolymer or terpolymer with maleic acid anhydride as a basic component and glycidyl methacrylate and/or a styrene derivative as a further component and possibly an additive.
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公开(公告)号：EP0781424B1
公开(公告)日：1998-11-18
申请号：EP95929739.1
申请日：1995-09-01
发明人： SEZI, Recai , LEUSCHNER, Rainer , SCHMIDT, Erwin
CPC分类号： G03F7/022 , G03F7/0233 , Y10S430/12
摘要： The invention concerns a photolithographic method of producing sub-micron structural features by applying to a substrate a photosensitive resist layer consisting of a polymer containing tert.-butyl ester or tert.-butoxycarbonyloxy groups, a photosensitive component (in the form of an ester of naphthoquinonediazide-4-sulphonic acid and an aromatic hydroxy compound) and a suitable solvent. The photoresist is then dried, illuminated imagewise, heated at a temperature between 120 and 150 DEG C for 100 to 600 s and wet-developed (single-layer resist system). The invention also concerns a method in which an analogous two-layer resist system is used.
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