摘要:
Dynamic random access memory chips (DRAMs) in a computer memory system are made to be more available for access by a processor even though an autorefresh cycle may be in progress when the processor attempts to access the memory system. A DECODED AUTOREFRESH mode is defined which allows refresh of certain banks of the DRAM only. The bank addresses from the external DRAM controller select the bank where the AUTOREFRESH has to be performed. The DRAM controller circuitry makes sure that every bank of the DRAM gets a refresh command often enough to retain information.
摘要:
Dynamic random access memory chips (DRAMs) in a computer memory system are made to be more available for access by a processor even though an autorefresh cycle may be in progress when the processor attempts to access the memory system. A DECODED AUTOREFRESH mode is defined which allows refresh of certain banks of the DRAM only. The bank addresses from the external DRAM controller select the bank where the AUTOREFRESH has to be performed. The DRAM controller circuitry makes sure that every bank of the DRAM gets a refresh command often enough to retain information.
摘要:
A fuse, having reduced blow-current requirements thereby minimizing the power supply voltage and chip area required for the driver transistors, has a geometry which is characterized by an essentially uniform width dimension throughout the primary axis of the fuse link but having at least one approximately right angle bend in the fuse link. The fuse can be blown open with approximately 10% of the input current density required for a straight fuse of equal cross-sectional area. The reason for this is that, due to current crowding, the current density is accentuated at the inside corner of the bend. As the input current to the fuse is increased, a current density is reached at the inside corner which causes the fuse material to melt. A notch forms at the inside corner. The fuse geometry altered by the notching causes even more severe current crowding at the notches, and this in turn makes the melting propagate across the width of the fuse. The predictability of the point of fuse blow out allows even greater circuit densities while minimizing the possibility of accidental damage to adjacent devices.
摘要:
A receiver circuit, in accordance with the present invention, includes a first stage (202) having an input for receiving input signals (VIN) and an output node (220). The first stage includes an amplifier, and a second stage (223) includes an input coupled to the output of the first stage. The second stage also includes a logic gate (224) coupled to the output of the first stage, the logic gate having an output (OUT) representing the output of the receiver circuit, and a feed back element (226) coupled from the logic gate output and connecting to a switching element (228 or 230). The switching element, being responsive to the logic gate output, switches a current source (231 or 233) on and off to adjust a switchpoint of the receiver circuit.
摘要:
A receiver circuit, in accordance with the present invention, includes a first stage (202) having an input for receiving input signals (VIN) and an output node (220). The first stage includes an amplifier, and a second stage (223) includes an input coupled to the output of the first stage. The second stage also includes a logic gate (224) coupled to the output of the first stage, the logic gate having an output (OUT) representing the output of the receiver circuit, and a feed back element (226) coupled from the logic gate output and connecting to a switching element (228 or 230). The switching element, being responsive to the logic gate output, switches a current source (231 or 233) on and off to adjust a switchpoint of the receiver circuit.
摘要:
A sensing system for sensing data from a data source and driving a pair of output lines in response thereto comprises: a primary sensing device operatively coupled to the data source for sensing and storing said data therein; and a secondary sensing device operatively coupled to the primary sensing device via a pair of input lines and also operatively coupled to the pair of output lines, the secondary sensing device being responsive to a differential voltage generated across the pair of input lines in accordance with said data stored by the primary sensing device and the secondary sensing device having a differential voltage threshold range associated therewith defined by a negative threshold and a positive threshold, whereby the secondary sensing device drives the pair of output lines to a first output condition when the differential voltage across the pair of input lines is within the differential voltage threshold range, to a second output condition when the differential voltage is at least equal to the negative threshold, and to a third output condition when the differential voltage is at least equal to the positive threshold.
摘要:
A decoded source sense amplifier in which the column select signal is shaped so that it turns on bit select transistors at a predetermined time after the source electrodes of the sense amplifier are connected to ground, so as to give the sense amplifier time to latch before it is coupled to external bit lines.
摘要:
A semiconductor memory device is disclosed which includes an input terminal for receiving, and an output terminal for producing a data word, each having a predetermined number of bits. An internal memory array stores a plurality of error correcting encoded codewords each encoding more than one data word. An error correcting encoder is coupled between the input terminal and the memory array for generating an error correcting encoded codeword, encoding the received data word, and storing the codeword in the internal memory array. An error correcting decoder is coupled between the internal memory array and the output terminal to retrieve an error correction encoded codeword from the internal memory array, correct any detected errors, and produce one of the more than one data words encoded in the retrieved codeword at the output terminal.
摘要:
Testing of a multibank memory device having a plurality of memory banks which includes activating two or more of the plurality of memory banks for participation in the test; selecting at least one common memory address corresponding to a memory cell within each activated bank; simultaneously writing test data into the selected memory cell of each activated bank; simultaneously reading the test data previously written into the selected memory cell of each activated bank; and comparing the test data read from each activated bank with the test data from each other activated bank and if a match is determined to exist, then indicating a pass condition, else indicating a fail condition.