公开(公告)号：EP0563852A1

公开(公告)日：1993-10-06

申请号：EP93105170.0

申请日：1993-03-29

申请人： SIEMENS AKTIENGESELLSCHAFT ,  International Business Machines Corporation

发明人： Galbi, Duane Elmer ,  Guthrie, William Hewlett ,  Kiehl, Oliver ,  Mandelman, Jack Allan ,  Watts, Josef Samuel

IPC分类号： H01L23/525

CPC分类号： H01L23/5252 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A fuse, having reduced blow-current requirements thereby minimizing the power supply voltage and chip area required for the driver transistors, has a geometry which is characterized by an essentially uniform width dimension throughout the primary axis of the fuse link but having at least one approximately right angle bend in the fuse link. The fuse can be blown open with approximately 10% of the input current density required for a straight fuse of equal cross-sectional area. The reason for this is that, due to current crowding, the current density is accentuated at the inside corner of the bend. As the input current to the fuse is increased, a current density is reached at the inside corner which causes the fuse material to melt. A notch forms at the inside corner. The fuse geometry altered by the notching causes even more severe current crowding at the notches, and this in turn makes the melting propagate across the width of the fuse. The predictability of the point of fuse blow out allows even greater circuit densities while minimizing the possibility of accidental damage to adjacent devices.

摘要翻译： 具有降低的电流要求从而使驱动晶体管所需的电源电压和芯片面积最小化的保险丝具有几何形状，其特征在于在熔丝链的整个主轴上具有基本均匀的宽度尺寸，但具有至少一个约 熔断体直角弯曲。 熔断器可以吹开大约10％的输入电流密度所需的直流熔断器等截面积。 这样做的原因是，由于目前的拥挤，电流密度在弯曲的内部角落被强化。 当保险丝的输入电流增加时，在内角处达到电流密度，导致熔丝材料熔化。 内角处形成凹痕。 通过开槽改变的保险丝几何在槽口处产生更严重的电流拥挤，这又导致熔化物在保险丝的宽度上传播。 保险丝熔断点的可预测性允许更大的电路密度，同时最小化对相邻设备的意外损坏的可能性。

公开(公告)号：EP0380906A3

公开(公告)日：1992-01-15

申请号：EP90100008.3

申请日：1990-01-02

申请人： International Business Machines Corporation

发明人： Bilowith, James Andrew ,  Dombroski, Edward John ,  Guthrie, William Hewlett ,  Noth, Richard William

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/50 ,  H01L23/49534 ,  H01L23/49572 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025

摘要： Multiple, single conductor, tape automated bonding (TAB) tapes (36, 37, 38) are sequentially applied to a semiconductor device (31) by the bonding of a first, etched, single layer TAB tape to an outer row of bonding pads (32, 33, 34) on a semiconductor chip and to selected contacts on a lead frame followed by the laying down of at least one additional etched, single layer TAB tape which is then bonded to an inner row of bonding pads on the semiconductor chip and to different selected lead frame contacts. If desired the subsequent TAB tape may be adhered to the preceding TAB tape to increase the mechanical strength of all the tapes and improve the electrical characteristics of the tapes. The application of one or more ground planes to the assembly is also shown.

公开(公告)号：EP0380906A2

公开(公告)日：1990-08-08

申请号：EP90100008.3

申请日：1990-01-02

申请人： International Business Machines Corporation

发明人： Bilowith, James Andrew ,  Dombroski, Edward John ,  Guthrie, William Hewlett ,  Noth, Richard William

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/50 ,  H01L23/49534 ,  H01L23/49572 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025

摘要： Multiple, single conductor, tape automated bonding (TAB) tapes (36, 37, 38) are sequentially applied to a semiconductor device (31) by the bonding of a first, etched, single layer TAB tape to an outer row of bonding pads (32, 33, 34) on a semiconductor chip and to selected contacts on a lead frame followed by the laying down of at least one additional etched, single layer TAB tape which is then bonded to an inner row of bonding pads on the semiconductor chip and to different selected lead frame contacts. If desired the subsequent TAB tape may be adhered to the preceding TAB tape to increase the mechanical strength of all the tapes and improve the electrical characteristics of the tapes. The application of one or more ground planes to the assembly is also shown.

摘要翻译： 通过将第一蚀刻的单层TAB带粘合到外排的焊盘上，多个单导体，带状自动粘合（TAB）带（36,37,38）被顺序地施加到半导体器件（31） 32,33,34），并且在引线框上选择触点，然后放置至少一个额外蚀刻的单层TAB带，然后将该TAB带粘合到半导体芯片上的内排接合焊盘， 到不同的选定引线框架触点。 如果需要，可以将随后的TAB带粘附到前面的TAB带上以增加所有带的机械强度并改善带的电特性。 还示出了将一个或多个接地平面应用于组件。