公开(公告)号：EP2634825B1

公开(公告)日：2018-12-26

申请号：EP11836609.5

申请日：2011-10-26

申请人： SK Siltron Co., Ltd. ,  Kumoh National Institute Of Technology Industry-Academic Cooperation Foundation

发明人： AN, Sung Jin ,  LEE, Dong gun ,  KIM, Seok Han

IPC分类号： H01L33/12 ,  H01L33/00

CPC分类号： H01L33/02 ,  B82Y40/00 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/38 ,  H01L29/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S977/734

摘要： According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.

公开(公告)号：EP2634825A2

公开(公告)日：2013-09-04

申请号：EP11836609.5

申请日：2011-10-26

申请人： LG Siltron Inc. ,  Kumoh National Institute Of Technology Industry-Academic Cooperation Foundation

发明人： AN, Sung Jin ,  LEE, Dong gun ,  KIM, Seok Han

IPC分类号： H01L33/12

CPC分类号： H01L33/02 ,  B82Y40/00 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/38 ,  H01L29/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S977/734

摘要： According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.

摘要翻译： 根据本发明，化合物半导体的制造方法包括：在第一选择的基板或第一选择的化合物半导体层上形成石墨烯材料层; 在至少所述石墨烯衍生的材料层上形成至少一层的第二化合物半导体层，以及改变所述石墨烯衍生的材料层，以分离至少一层的所述第二化合物半导体层。