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    Semiconductor laser, semiconductor device and their manufacturing methods
    2.
    发明公开
    Semiconductor laser, semiconductor device and their manufacturing methods 有权
    半导体激光器，半导体器件及其制造方法

    公开(公告)号：EP1005123A3

    公开(公告)日：2003-04-02

    申请号：EP99123020.2

    申请日：1999-11-19

    申请人： SONY CORPORATION

    发明人： Asano, Takeharu ,  Asatsuma, Tsunenori ,  Hino, Tomonori ,  Tomiya, Shigetaka ,  Yamaguchi, Takashi ,  Kobayashi, Takashi

    IPC分类号： H01S5/323 ,  H01S5/22 ,  H01L33/00

    CPC分类号： H01S5/2231 ,  H01L33/18 ,  H01L33/32 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/32316 ,  H01S5/32341

    摘要： In a semiconductor laser made of nitride III-V compound semiconductors and having a ridge-shaped stripe, which is capable of stably controlling transverse modes to prevent high-order mode oscillation during high output power and excellent in heat dissipation, opposite sides of the ridge are buried by a buried semiconductor layer such as AlGaN buried layer made of a nitride III-V compound semiconductor at least of which is a non-single crystal such as polycrystal. The buried semiconductor layer is grown under a growth temperature in the range from 520 °C to 760 °C.

    摘要翻译： 在由氮化物III-V族化合物半导体制成并具有脊状条纹的半导体激光器中，其能够稳定地控制横向模式以防止在高输出功率期间的高阶模式振荡和优异的散热， 被埋入的半导体层埋入，所述埋入的半导体层诸如由氮化物III-V族化合物半导体制成的AlGaN埋层，所述氮化物III-V族化合物半导体至少是诸如多晶的非单晶体。 埋入的半导体层在520℃至760℃的生长温度下生长。

    Semiconductor laser, semiconductor device and their manufacturing methods
    3.
    发明公开
    Semiconductor laser, semiconductor device and their manufacturing methods 有权
    Halbleiterlaser，Halbleitervorrichtung und Herstellungsverfahren

    公开(公告)号：EP1005123A2

    公开(公告)日：2000-05-31

    申请号：EP99123020.2

    申请日：1999-11-19

    申请人： SONY CORPORATION

    发明人： Asano, Takeharu ,  Asatsuma, Tsunenori ,  Hino, Tomonori ,  Tomiya, Shigetaka ,  Yamaguchi, Takashi ,  Kobayashi, Takashi

    IPC分类号： H01S5/323 ,  H01S5/22 ,  H01L33/00

    CPC分类号： H01S5/2231 ,  H01L33/18 ,  H01L33/32 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/32316 ,  H01S5/32341

    摘要： In a semiconductor laser made of nitride III-V compound semiconductors and having a ridge-shaped stripe, which is capable of stably controlling transverse modes to prevent high-order mode oscillation during high output power and excellent in heat dissipation, opposite sides of the ridge are buried by a buried semiconductor layer such as AlGaN buried layer made of a nitride III-V compound semiconductor at least of which is a non-single crystal such as polycrystal. The buried semiconductor layer is grown under a growth temperature in the range from 520 °C to 760 °C.

    摘要翻译： 在由氮化物III-V族化合物半导体制成的具有脊状条纹的半导体激光器中，能够稳定地控制横模，以防止在高输出功率期间的高阶振荡，散热性优异， 被掩埋的半导体层掩埋，例如由氮化物III-V化合物半导体制成的AlGaN掩埋层，其至少是诸如多晶的非单晶。 掩埋的半导体层在520℃至760℃的生长温度下生长

    Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus
    4.
    发明公开
    Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus 失效
    发光半导体装置的制造方法和设备，用于光学记录/再现

    公开(公告)号：EP0841707A2

    公开(公告)日：1998-05-13

    申请号：EP97119653.0

    申请日：1997-11-10

    申请人： SONY CORPORATION

    发明人： Ishibashi, Akira ,  Taniguchi, Satoshi ,  Hino, Tomonori ,  Kobayashi, Takashi ,  Nakano, Kazushi ,  Nakayama, Norikazu

    IPC分类号： H01L33/00 ,  H01S3/19

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/025 ,  H01S5/0421 ,  H01S5/3203 ,  H01S5/327 ,  H01S5/347 ,  H01S2301/173

    摘要： A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat. A method for manufacturing a semiconductor light emitting device having: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; and a p-type cladding layer on the active layer, the n-type cladding layer, the active layer and the p-type cladding layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that the n-type cladding layer, the active layer and said p-type cladding layer are grown by varying, for the respective layers, the ratio of the molecular beam intensity of the group VI element relative to the molecular beam intensity of the group II element.

    Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus
    5.
    发明公开
    Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus 失效
    发光半导体装置的制造方法和设备，用于光学记录/再现

    公开(公告)号：EP0841707A3

    公开(公告)日：2000-05-03

    申请号：EP97119653.0

    申请日：1997-11-10

    申请人： SONY CORPORATION

    发明人： Ishibashi, Akira ,  Taniguchi, Satoshi ,  Hino, Tomonori ,  Kobayashi, Takashi ,  Nakano, Kazushi ,  Nakayama, Norikazu

    IPC分类号： H01L33/00 ,  H01S3/19 ,  H01L21/363

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/025 ,  H01S5/0421 ,  H01S5/3203 ,  H01S5/327 ,  H01S5/347 ,  H01S2301/173

    摘要： A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat. A method for manufacturing a semiconductor light emitting device having: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; and a p-type cladding layer on the active layer, the n-type cladding layer, the active layer and the p-type cladding layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that the n-type cladding layer, the active layer and said p-type cladding layer are grown by varying, for the respective layers, the ratio of the molecular beam intensity of the group VI element relative to the molecular beam intensity of the group II element.

    摘要翻译： 一种半导体发光器件包括：化合物半导体衬底; 在化合物半导体衬底的n型包覆层的; 在n型包层上的活性层; 所述有源层上的p型包覆层：和一个p型接触层的p型包覆层，所述n型包覆层，活性层，p型覆层和p型接触层上 正在取得II-VI族化合物半导体包含选自锌，镉，镁，汞的选定群组II族元素中的至少一个的和Be和选自S，硒，碲的选定组VI族元素中的至少一个 和O，其特征在于，至少做有源层具有起伏和至少在p型层是平坦的。 一种用于制造具有半导体发光器件的方法：化合物半导体衬底; 在化合物半导体衬底的n型包覆层的; 在n型包层上的活性层; 和含氧基团中的至少一种第II族元素的有源层上的p型包覆层，所述n型包覆层，活性层和p型包覆层由II-VI族化合物半导体的选自下组中选择 的锌，镉，镁，汞，Be和选自S，硒，碲和O的选定组VI族元素中的至少一种，其特征在于DASS死n型包覆层，所述有源层和所述p型 包层通过改变生长，对于respectivement层，所述VI族元素相对于所述第II族元素的分子束强度的分子束强度的比率。