专利检索 ap:("STMicroelectronics International N.V." OR "STMicroelectronics S.r.l." OR "STMicroelectronics (Crolles 2) SAS") AND inv:"DUTEY, Denis" 第 1 页

1.

发明公开
REDUNDANT STORAGE OF ERROR CORRECTION CODE (ECC) CHECKBITS FOR VALIDATING PROPER OPERATION OF A STATIC RANDOM ACCESS MEMORY (SRAM) 审中-公开

公开(公告)号：EP3483732A1

公开(公告)日：2019-05-15

申请号：EP18205453.6

申请日：2018-11-09

申请人： STMicroelectronics International N.V. , STMicroelectronics S.r.l. , STMicroelectronics (Crolles 2) SAS

发明人： OM, Ranjan , GEMELLI, Riccardo , DUTEY, Denis

IPC分类号： G06F11/10 , G06F11/16 , G06F11/20

摘要： Application data and error correction code (ECC) checkbits associated with that application data are stored in a first memory (24). The ECC checkbits, but not the application data, are stored in a second memory (26). In response to a request to read the application from the first memory (24), the ECC checkbits from the first memory are also read and used to detect, and possibly correct, errors in the read application data. The ECC checkbits are further output from both the first and second memories for bit-by-bit comparison (60). In response to a failure of the bit-by-bit comparison, a signal (SRAM_OK) indicating possible malfunction of one or the other or both of the first and second memories (24, 26) is generated.

2.

发明授权
REDUNDANT STORAGE OF ERROR CORRECTION CODE (ECC) CHECKBITS FOR VALIDATING PROPER OPERATION OF A STATIC RANDOM ACCESS MEMORY (SRAM) 有权

公开(公告)号：EP3483732B1

公开(公告)日：2020-08-12

申请号：EP18205453.6

申请日：2018-11-09

申请人： STMicroelectronics International N.V. , STMicroelectronics S.r.l. , STMicroelectronics (Grenoble 2) SAS

发明人： OM, Ranjan , GEMELLI, Riccardo , DUTEY, Denis

IPC分类号： G06F11/10 , G06F11/16 , G06F11/20