公开(公告)号：EP3913681A3

公开(公告)日：2022-03-16

申请号：EP21174210.1

申请日：2021-05-17

Applicant: STMicroelectronics S.r.l.

Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  ZULLINO, Lucia ,  NOMELLINI, Andrea ,  SEGHIZZI, Luca ,  ZANOTTI, Luca ,  SCOLARI, Martina ,  MURARI, Bruno

IPC: H01L27/16 ,  H01L35/22 ,  H01L35/34 ,  H01L31/052

Abstract: A method of fabricating a thermoelectric converter comprises: providing a layer (115; 215) of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements (133a; 237; 330a) of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements (133b; 249; 330b) of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer (115; 215) thickness, from the first surface to the second surface; forming electrically conductive interconnections (143, 413; 257, 413) in correspondence of the first surface and of the second surface of the layer of Silicon-based material (115; 215),, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal (257') and an output electrical terminal (257") electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

公开(公告)号：EP3913681A2

公开(公告)日：2021-11-24

申请号：EP21174210.1

申请日：2021-05-17

Applicant: STMicroelectronics S.r.l.

Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  ZULLINO, Lucia ,  NOMELLINI, Andrea ,  SEGHIZZI, Luca ,  ZANOTTI, Luca ,  SCOLARI, Martina ,  MURARI, Bruno

IPC: H01L27/16 ,  H01L35/22 ,  H01L35/34 ,  H01L31/052

Abstract: A method of fabricating a thermoelectric converter comprises: providing a layer (115; 215) of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements (133a; 237; 330a) of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements (133b; 249; 330b) of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer (115; 215) thickness, from the first surface to the second surface; forming electrically conductive interconnections (143, 413; 257, 413) in correspondence of the first surface and of the second surface of the layer of Silicon-based material (115; 215),, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal (257') and an output electrical terminal (257") electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

公开(公告)号：EP4159445A1

公开(公告)日：2023-04-05

申请号：EP22198098.0

申请日：2022-09-27

Applicant: STMicroelectronics S.r.l.

Inventor： NOMELLINI, Andrea ,  SEGHIZZI, Luca

IPC: B41J2/16 ,  B41J2/14

Abstract: Process for manufacturing a microfluidic device, wherein a sacrificial layer (32) is formed on a semiconductor substrate (31); a carrying layer (33) is formed on the sacrificial layer; the carrying layer is selectively removed to form at least one release opening (36) extending through the carrying layer; a permeable layer (37) of a permeable semiconductor material is formed in the at least one release opening; the sacrificial layer (32) is selectively removed through the permeable layer (37) to form a fluidic chamber (38; 138); the at least one release opening is filled with non-permeable semiconductor filling material, forming a monolithic body having a membrane region (42); an actuator element is formed on the membrane region and a cap element is attached to the monolithic body and surrounds the actuator element.

公开(公告)号：EP4155255A1

公开(公告)日：2023-03-29

申请号：EP22195564.4

申请日：2022-09-14

Applicant: STMicroelectronics S.r.l.

Inventor： LONGONI, Gianluca ,  SEGHIZZI, Luca ,  NOMELLINI, Andrea

IPC: B81C1/00

Abstract: A process for manufacturing a MEMS device (101) including: forming a first sacrificial dielectric region (15) on a semiconductor wafer (4,6,10,12,14); forming a structural layer (25) of semiconductor material on the first sacrificial dielectric region (15); forming a plurality of first openings (35) through the structural layer (25), which laterally delimit at least one functional element (44, 46, 48) and give out onto the first sacrificial dielectric region (15); forming a second sacrificial dielectric region (57) on the structural layer (25) so as to close the first openings (35); forming a ceiling layer (75) of semiconductor material on the second sacrificial dielectric region (57); forming a plurality of second openings (77) through the ceiling layer (75); forming on the ceiling layer (77) a permeable layer (80) of polysilicon, which closes the second openings (77); selectively removing the first and the second sacrificial dielectric regions (15, 57) causing a gas to flow through the permeable layer (80) so as to release the functional element (44, 46, 48); and then forming on the permeable layer (80) a sealing layer (75) of semiconductor material.