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    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    1.
    发明公开
    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED 审中-公开

    公开(公告)号：EP3913681A3

    公开(公告)日：2022-03-16

    申请号：EP21174210.1

    申请日：2021-05-17

    Applicant: STMicroelectronics S.r.l.

    Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  ZULLINO, Lucia ,  NOMELLINI, Andrea ,  SEGHIZZI, Luca ,  ZANOTTI, Luca ,  SCOLARI, Martina ,  MURARI, Bruno

    IPC: H01L27/16 ,  H01L35/22 ,  H01L35/34 ,  H01L31/052

    Abstract: A method of fabricating a thermoelectric converter comprises: providing a layer (115; 215) of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements (133a; 237; 330a) of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements (133b; 249; 330b) of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer (115; 215) thickness, from the first surface to the second surface; forming electrically conductive interconnections (143, 413; 257, 413) in correspondence of the first surface and of the second surface of the layer of Silicon-based material (115; 215),, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal (257') and an output electrical terminal (257") electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    3.
    发明公开
    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED 审中-公开

    公开(公告)号：EP3913681A2

    公开(公告)日：2021-11-24

    申请号：EP21174210.1

    申请日：2021-05-17

    Applicant: STMicroelectronics S.r.l.

    Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  ZULLINO, Lucia ,  NOMELLINI, Andrea ,  SEGHIZZI, Luca ,  ZANOTTI, Luca ,  SCOLARI, Martina ,  MURARI, Bruno

    IPC: H01L27/16 ,  H01L35/22 ,  H01L35/34 ,  H01L31/052

    Abstract: A method of fabricating a thermoelectric converter comprises: providing a layer (115; 215) of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements (133a; 237; 330a) of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements (133b; 249; 330b) of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer (115; 215) thickness, from the first surface to the second surface; forming electrically conductive interconnections (143, 413; 257, 413) in correspondence of the first surface and of the second surface of the layer of Silicon-based material (115; 215),, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal (257') and an output electrical terminal (257") electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

    MINIATURIZED LOAD SENSOR DEVICE HAVING LOW SENSITIVITY TO THERMO-MECHANICAL PACKAGING STRESS, IN PARTICULAR FORCE AND PRESSURE SENSOR
    4.
    发明公开
    MINIATURIZED LOAD SENSOR DEVICE HAVING LOW SENSITIVITY TO THERMO-MECHANICAL PACKAGING STRESS, IN PARTICULAR FORCE AND PRESSURE SENSOR 审中-公开
    小型化的负载传感器装置对热机械包装应力，特别是力和压力传感器具有低灵敏度

    公开(公告)号：EP3252449A1

    公开(公告)日：2017-12-06

    申请号：EP16206884.5

    申请日：2016-12-23

    Applicant: STMicroelectronics S.r.l.

    Inventor： CALTABIANO, Daniele ,  ABBASI GAVARTI, Mohammad ,  MURARI, Bruno ,  BRIOSCHI, Roberto ,  GIUSTI, Domenico

    IPC: G01L9/00 ,  G01L1/04

    Abstract: A load-sensing device (10), arranged in a package (12) forming a chamber (24). The package (12) has a deformable substrate (21) configured, in use, to be deformed by an external force. A sensor unit (11) is in direct contact with the deformable substrate (21) and is configured to detect deformations of the deformable substrate. An elastic element (15) is arranged within of the chamber (24) and acts between the package (12) and the sensor unit (11) to generate, on the sensor unit, a force keeping the sensor unit in contact with the deformable substrate. For example, the deformable substrate is a base (21) of the package (12), and the elastic element is a metal lamina (15) arranged between the lid (22) of the package (12) and the sensor unit (11). The sensor unit (11) may be a semiconductor die integrating piezoresistors.

    Abstract translation: 负载感测装置（10），其布置在形成腔室（24）的包装（12）中。 包装（12）具有可变形的基底（21），该基底在使用中被配置为通过外力而变形。 传感器单元（11）与可变形基板（21）直接接触并且被配置为检测可变形基板的变形。 弹性元件（15）布置在腔室（24）内并且作用在封装（12）和传感器单元（11）之间，以在传感器单元上​​产生保持传感器单元与可变形基底 。 例如，可变形衬底是封装（12）的基座（21），并且弹性元件是布置在封装（12）的盖（22）和传感器单元（11）之间的金属薄片（15） 。 传感器单元（11）可以是集成压敏电阻器的半导体管芯。

    CAPACITIVE POSITION SENSING IN AN ELECTROSTATIC MICROMOTOR
    5.
    发明公开
    CAPACITIVE POSITION SENSING IN AN ELECTROSTATIC MICROMOTOR 审中-公开
    电容SYSTEM FOR位置GIVE静电微电机

    公开(公告)号：EP2132868A1

    公开(公告)日：2009-12-16

    申请号：EP07736756.3

    申请日：2007-04-03

    Applicant: STMicroelectronics S.r.l.

    Inventor： MURARI, Bruno ,  MASTROMATTEO, Ubaldo ,  RICOTTI, Giulio

    IPC: H02N1/00

    CPC classification number: H02N1/006

    Abstract: An electrostatic micromotor (10') is provided with a fixed substrate (12), a mobile substrate (13) facing the fixed substrate (12), and electrostatic-interaction elements (14, 15, 17) enabling a relative movement of the mobile substrate (3) with respect to the fixed substrate (2) in a movement direction (x); the electrostatic micromotor is also provided with a capacitive position-sensing structure (18') configured to enable sensing of a relative position of the mobile substrate (13) with respect to the fixed substrate (12) in the movement direction (x). The capacitive position-sensing structure (18') is formed by at least one sensing indentation (22), extending within the mobile substrate (13) from a first surface (13a; 13b) thereof, and by at least one first sensing electrode (24), facing, in at least one given operating condition, the sensing indentation (22).

    INTEGRATED ELECTRONIC DEVICE FOR MONITORING PARAMETERS WITHIN A SOLID STRUCTURE AND MONITORING SYSTEM USING SUCH A DEVICE
    9.
    发明公开
    INTEGRATED ELECTRONIC DEVICE FOR MONITORING PARAMETERS WITHIN A SOLID STRUCTURE AND MONITORING SYSTEM USING SUCH A DEVICE 有权
    用于监测PARAMENETERN集成电子设备以坚固的结构和监控系统使用这种VORRICHUNG

    公开(公告)号：EP2656057A1

    公开(公告)日：2013-10-30

    申请号：EP11771170.5

    申请日：2011-10-20

    Applicant: STMicroelectronics S.r.l.

    Inventor： PAGANI, Alberto ,  MURARI, Bruno

    IPC: G01N27/20 ,  G01N33/38 ,  G01L1/18

    CPC classification number: G01N27/00 ,  G01L1/26 ,  G01M5/0083

    Abstract: Device (100) for detecting and monitoring local parameters within a solid structure (300). The device comprises an integrated detection module (1) made on a single chip, having an integrated functional circuitry portion (16) comprising at least one integrated sensor (10) and an integrated antenna (11), and electromagnetic means (2) for transmitting/receiving signals and energy exchange. The integrated functional circuitry portion (16) comprises a functional surface (18) facing towards the outside of the chip. A passivation layer (15) is arranged to completely cover at least the functional surface (18), so that the integrated detection module (1) is entirely hermetically sealed and galvanically insulated from the surrounding environment. The integrated antenna (11), the electromagnetic means (2) and the remote antenna (221) are operatively connected wirelessly through magnetic or electromagnetic coupling.

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