公开(公告)号：EP3840040A1

公开(公告)日：2021-06-23

申请号：EP20214010.9

申请日：2020-12-15

Applicant: STMicroelectronics S.r.l.

Inventor： TIZIANI, Mr. Roberto ,  MAZZOLA, Mr. Mauro

IPC: H01L23/495

Abstract: A leadframe (10) for semiconductor devices, the leadframe (10) comprising a die pad portion (14) having a first planar die-mounting surface (14a) and a second planar surface (14b) opposed the first surface (14a), the first surface (14a) and the second surface (14b) having facing peripheral rims jointly defining a peripheral outline of the die pad (14), wherein:
the die pad (14) comprises at least one package molding compound receiving cavity (18) opening at the periphery of said first planar surface (14a),
the peripheral rims of said first surface (14a) and said second surface (14b) are mutually offset to provide a stepped peripheral outline of the die pad (14) with the periphery of said first planar surface (14a) having a peripheral region protruding with respect to the second planar surface (14b), wherein said at least one package molding compound receiving cavity (18) is provided at said protruding region of the first planar surface (14a), and
the at least one package molding compound receiving cavity (18) partially overlaps and goes through said stepped peripheral outline of the die pad (14).

公开(公告)号：EP3886147A1

公开(公告)日：2021-09-29

申请号：EP21163789.7

申请日：2021-03-19

Applicant: STMicroelectronics S.r.l.

Inventor： TIZIANI, Mr. Roberto ,  CATALANO, Ms. Guendalina

IPC: H01L21/60 ,  H01L21/56 ,  H01L23/29 ,  H01L23/495

Abstract: A method comprises molding laser direct structuring material (16) onto at least one semiconductor die (12), forming resist material (18) on the laser direct structuring material (16), producing mutually aligned patterns of electrically-conductive formations (20a, 20b) structured in the laser direct structuring material (16) and etched-out portions of the resist material (18) having lateral walls sidewise of said electrically-conductive formations (20a, 20b) structured via laser beam energy (L), and forming electrically-conductive material (22) at said etched-out portions of the resist material (18), the electrically-conductive material (22) having lateral confinement surfaces at said lateral walls of said etched-out portions of the resist material (18).