公开(公告)号：EP4005972A1

公开(公告)日：2022-06-01

申请号：EP21211139.7

申请日：2021-11-29

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics International N.V.

Inventor： DUQI, Enri ,  BALDO, Lorenzo ,  FERRARI, Paolo ,  VIGNA, Benedetto ,  VILLA, Flavio Francesco ,  CASTOLDI, Laura Maria ,  GELMI, Ilaria

IPC: B81C1/00 ,  H04R1/08

Abstract: A semiconductor device includes: a substrate (2); a transduction microstructure (3) integrated in the substrate (2); a cap (5) joined to the substrate (2) and having a first face (5a) adjacent to the substrate (2) and a second, outer, face (5b); and a channel (15) extending through the cap (5) from the second face (5b) to the first face (5a) and communicating with the transduction microstructure (3). A protective membrane (17) made of porous polycrystalline silicon permeable to aeriform substances is set across the channel (15).

公开(公告)号：EP4520716A1

公开(公告)日：2025-03-12

申请号：EP24195132.6

申请日：2024-08-19

Applicant: STMicroelectronics International N.V.

Inventor： NOMELLINI, Andrea ,  GELMI, Ilaria ,  CAPRA, Federica ,  VIMERCATI, Michele ,  LAMAGNA, Luca

IPC: B81B3/00

Abstract: A process for manufacturing a microelectromechanical device (10) includes: on a body (13) containing semiconductor material, forming a sacrificial layer (18) of dielectric material having a first surface (18a), opposite to the body (13); conferring a sacrificial surface roughness to the first surface (18a) of the sacrificial layer (18); on the first surface (18a) of the sacrificial layer (18), forming a structural layer (112) of semiconductor material having a second surface (112a) in contact with the first surface (18a) of the sacrificial layer (18). Conferring sacrificial surface roughness to the first surface (18a) of the sacrificial layer (18) includes: on the sacrificial layer (18), forming a transfer layer (19) of semiconductor material with intrinsic porosity; and partially removing the sacrificial layer (18) through the transfer layer (19).

公开(公告)号：EP3912953A1

公开(公告)日：2021-11-24

申请号：EP21174844.7

申请日：2021-05-19

Applicant: STMicroelectronics S.r.l.

Inventor： ALLEGATO, Giorgio ,  CORSO, Lorenzo ,  GELMI, Ilaria ,  VALZASINA, Carlo

IPC: B81B7/02

Abstract: Process for manufacturing a MEMS device (30), wherein a first structural layer (41) of a first thickness is formed on a substrate (31); first trenches (58) are formed through the first structural layer (41); masking regions (60') separated by first openings (62) are formed on the first structural layer; a second structural layer (42) of a second thickness is formed on the first structural layer (41) in direct contact with the first structural layer (41) at the first openings (62) and forms here, together with the first structural layer, thick structural regions (64) having a third thickness equal to the sum of the first and the second thicknesses; a plurality of second trenches (67) are formed through the second structural layer (42), over the masking regions (60'); and third trenches (68) are formed through the first and the second structural layers (41, 42) by removing selective portions of the thick structural regions (64) .