公开(公告)号：EP1780774A1

公开(公告)日：2007-05-02

申请号：EP05750967.1

申请日：2005-06-17

申请人： SUMCO Corporation

发明人： Adachi, Naoshi c/o Sumco Corporation

IPC分类号： H01L21/22 ,  H01L21/31 ,  H01L21/324 ,  H01L21/68

CPC分类号： H01L21/67306 ,  F27D5/0037 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/6732 ,  H01L21/67323

摘要： A heat treatment jig for supporting silicon semiconductor substrates by contacting, being loaded onto a heat treatment boat in a vertical heat treatment furnace, comprises; the configuration of a ring or a disc structure with the thickness between 1.5 and 6.0 mm; the deflection displacement of 100 µm or less at contact region in loaded condition; the outer diameter which is 65% or more of the diameter of said substrate; and the surface roughness (Ra) of between 1.0 and 100 µm at the contact region. The use of said jig enables to effectively retard the slip generation and to avoid the growth hindrance of thermally oxidized film at the back surface of said substrate, diminishing the surface steps which should cause the defocus in photolithography step in device fabrication process, thereby enabling to maintain high quality of silicon semiconductor substrates and to substantially enhance the device yield.

摘要翻译： 一种用于通过在立式热处理炉中加载到热处理船上的接触来支撑硅半导体衬底的热处理夹具包括： 环形或圆盘结构的结构，厚度介于1.5至6.0毫米之间; 在负载状态下接触区域的偏转位移为100μm以下; 外径为所述基板的直径的65％以上。 并且在接触区域的表面粗糙度（Ra）在1.0和100μm之间。 所述夹具的使用能够有效地延缓滑移生成并避免热氧化膜在所述基板的背面的增长阻碍，从而减少在器件制造过程中在光刻步骤中造成散焦的表面步骤，由此使得能够 保持硅半导体衬底的高质量并大大提高器件产量。

公开(公告)号：EP1780774B1

公开(公告)日：2011-10-05

申请号：EP05750967.1

申请日：2005-06-17

申请人： SUMCO Corporation

发明人： Adachi, Naoshi c/o Sumco Corporation

IPC分类号： H01L21/22 ,  H01L21/31 ,  H01L21/324 ,  H01L21/68

CPC分类号： H01L21/67306 ,  F27D5/0037 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/6732 ,  H01L21/67323

摘要： A heat treatment jig for a semiconductor silicon substrate making contact with a semiconductor silicon substrate to hold the substrate is to be mounted on a heat treatment boat in a vertical heat treatment furnace. The jig has a ring structure or a disc structure, with a thickness of 1.5mm or more but not more than 6.0mm and a flexure displacement quantity of 100μm or less in an area making contact with the semiconductor silicon substrate when mounted on the heat treatment boat. An outer diameter of the jig making contact with the semiconductor silicon substrate to hold the substrate is 65% or more of a diameter of the semiconductor silicon substrate, a surface roughness (Ra value) of a plane making contact with the semiconductor silicon substrate is 1.0μm or more but not more than 100μm. The heat treatment jig effectively reduces slipping, and at the same time, prevents growth suppression of a thermally oxidized film on a substrate rear plane, and eliminates a front plane step, which causes defocusing in a photolithography process in device manufacture. Thus, a high quality of the semiconductor silicon substrate can be maintained and device yield can be remarkably improved.