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14 条记录 (耗时 0.011 秒)

    SEMICONDUCTOR COMPONENT HANDLING DEVICE HAVING AN ELECTROSTATIC DISSIPATING FILM
    1.
    发明公开
    SEMICONDUCTOR COMPONENT HANDLING DEVICE HAVING AN ELECTROSTATIC DISSIPATING FILM 审中-公开
    DEVICE半导体部件用静电DISSIPATIONSFILM搬运

    公开(公告)号：EP1470570A2

    公开(公告)日：2004-10-27

    申请号：EP02789916.0

    申请日：2002-11-26

    申请人： Entegris, Inc.

    发明人： BHATT, Sanjiv, M. ,  EGGUM, Shawn, D.

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67323 ,  H01L21/6733 ,  H01L21/67366 ,  H01L21/67396

    摘要： A system and method for including a thin conductive polymer film (10), such as carbon-filled PEEK, in the molding process for handlers (34), transporters, carriers, trays (36) and like devices utilized in the semiconductor processing industry. The conductive film (10) of predetermined size and shape is selectively placed along a shaping surface (26) in a mold cavity (22) for alignment with a desired target surface of a moldable material (30). The molding process causes a surface of the film (10) to bond to a contact surface of the moldable material (30) such that the film is permanently adhered to the moldable material. As a result, a compatible conductive polymer can be selectively bonded only to those target surfaces where electrostatic dissipation is needed.

    HEAT TREATMENT JIG FOR A SEMICONDUCTOR SILICON SUBSTRATE
    2.
    发明授权
    HEAT TREATMENT JIG FOR A SEMICONDUCTOR SILICON SUBSTRATE 有权
    热处理夹具一硅基板

    公开(公告)号：EP1780774B1

    公开(公告)日：2011-10-05

    申请号：EP05750967.1

    申请日：2005-06-17

    申请人： SUMCO Corporation

    发明人： Adachi, Naoshi c/o Sumco Corporation

    IPC分类号： H01L21/22 ,  H01L21/31 ,  H01L21/324 ,  H01L21/68

    CPC分类号： H01L21/67306 ,  F27D5/0037 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/6732 ,  H01L21/67323

    摘要： A heat treatment jig for a semiconductor silicon substrate making contact with a semiconductor silicon substrate to hold the substrate is to be mounted on a heat treatment boat in a vertical heat treatment furnace. The jig has a ring structure or a disc structure, with a thickness of 1.5mm or more but not more than 6.0mm and a flexure displacement quantity of 100μm or less in an area making contact with the semiconductor silicon substrate when mounted on the heat treatment boat. An outer diameter of the jig making contact with the semiconductor silicon substrate to hold the substrate is 65% or more of a diameter of the semiconductor silicon substrate, a surface roughness (Ra value) of a plane making contact with the semiconductor silicon substrate is 1.0μm or more but not more than 100μm. The heat treatment jig effectively reduces slipping, and at the same time, prevents growth suppression of a thermally oxidized film on a substrate rear plane, and eliminates a front plane step, which causes defocusing in a photolithography process in device manufacture. Thus, a high quality of the semiconductor silicon substrate can be maintained and device yield can be remarkably improved.

    SEMICONDUCTOR COMPONENT HANDLING DEVICE HAVING A PERFORMANCE FILM
    3.
    发明公开
    SEMICONDUCTOR COMPONENT HANDLING DEVICE HAVING A PERFORMANCE FILM 审中-公开
    半导体组件处理设备与高性能薄膜

    公开(公告)号：EP1567034A2

    公开(公告)日：2005-08-31

    申请号：EP02784595.7

    申请日：2002-11-26

    申请人： Entegris, Inc.

    发明人： BHATT, Sanjiv, M. ,  EGGUM, Shawn, D.

    IPC分类号： A47G19/08

    CPC分类号： H01L21/67323 ,  H01L21/6733 ,  H01L21/67346 ,  H01L21/67366

    摘要： The present invention relates generally to a system and method for including a thin protective containment thermopolymer film (10), such as PEEK, in the molding process for handlers, transporters, carriers, trays and like devices utilized in the semiconductor processing industry. The thermoplastic film (10) of predetermined size and shape is selectively placed along a shaping surface (26) in a mold cavity (22) for alignment with a desired target surface of a moldable material. The film is permanently adhered to the moldable material. As a result, a compatible polymer film (10) can be selectively bonded only to those target surfaces where performance characteristics such as abrasion resistance, heat resistance, chemical resistance, outgassing containment, rigidity enhancement, hardness, creep reduction, fluid absorption containment, and the like is needed.

    Silicon wafer carrier
    6.
    发明公开
    Silicon wafer carrier 失效
    Siliciumscheibenträger

    公开(公告)号：EP1881034A1

    公开(公告)日：2008-01-23

    申请号：EP07018803.2

    申请日：1997-04-04

    申请人： TEIJIN LIMITED

    发明人： Zhang, En Lai ,  Yamamoto, Satoshi ,  Numata, Takayoshi ,  Sugie, Kiyoshi

    IPC分类号： C08L67/02 ,  H01L21/68

    CPC分类号： H01L21/67343 ,  C08K3/24 ,  C08L33/068 ,  C08L67/02 ,  C08L77/12 ,  C08L2205/16 ,  H01L21/67306 ,  H01L21/67316 ,  H01L21/67323 ,  H01L21/6733 ,  H01L21/67336 ,  C08L2666/02 ,  C08L2666/20

    摘要： Provided is a silicon wafer carrier which consists essentially of a polytetramethylene terephthalate formed as said silicon-wafer carrier, generating no more than 10 ppm of volatile gas when subjected to a heat-treatment at 150°C for 60 minutes, and eluting not more than 50 ppb of alkaline metals when immersed in pure water at 80°C for 120 minutes.
    The silicon wafer carrier has the property of generating little volatile gas or eluting metal so that it does not cause the surface contamination of a silicon wafer. The carrier has an excellent permanent anti-static effect, high mechanical properties and is heat-resistant.

    摘要翻译： 提供了一种硅晶片载体，其基本上由形成为所述硅晶片载体的聚四亚甲基对苯二甲酸酯形成，当在150℃下进行60分钟的热处理时产生不超过10ppm的挥发性气体，并且不超过 当在80℃的纯水中浸渍120分钟时，50ppb的碱金属。 硅晶片载体具有产生少量挥发性气体或洗脱金属的性质，使得其不会引起硅晶片的表面污染。 载体具有优异的永久防静电效果，机械性能高，耐热。

    SYSTEMS AND METHODS FOR ACHIEVING ISOTHERMAL BATCH PROCESSING OF SUBSTRATES USED FOR THE PRODUCTION OF MICRO-ELECTRO-MECHANICAL SYSTEMS
    8.
    发明公开
    SYSTEMS AND METHODS FOR ACHIEVING ISOTHERMAL BATCH PROCESSING OF SUBSTRATES USED FOR THE PRODUCTION OF MICRO-ELECTRO-MECHANICAL SYSTEMS 有权
    用于生产微机电系统的系统和方法

    公开(公告)号：EP1859077A2

    公开(公告)日：2007-11-28

    申请号：EP05849532.6

    申请日：2005-11-18

    申请人： Primaxx, Inc.

    发明人： GRANT, Robert, W.

    IPC分类号： C23F1/00

    CPC分类号： H01L21/6719 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67303 ,  H01L21/67306 ,  H01L21/6732 ,  H01L21/67323 ,  H01L21/67748 ,  H01L21/67757 ,  H01L21/67781

    摘要： A system and method for processing substrates that achieves isothermal and uniform fluid flow processing conditions for a plurality of substrates. In one aspect, the invention is a system and method that utilizes matching the emissivity value of the surfaces of a process chamber that oppose exposed surfaces of the substrates with the emissivity value of the exposed surfaces to achieve isothermal conditions throughout a substrate stack. In another aspect, the invention is system and method of processing substrates in a process chamber that exhibits excellent fluid flow uniformity by eliminating cavities or geometrical irregularities in the process chamber profile due to substrate loading openings. In yet anther aspect, the invention is a system and method of processing substrates wherein the process chamber comprises a liner and a shell, the liner constructed of a highly thermally conductive material, such as carbon, and the shell is constructed of a non-porous material, such as stainless steel.