摘要:
A method for obtaining a high-purity tantalum compound and a high-purity niobium compound comprises:
(a) dissolving a crude compound containing tantalum and niobium in hydrofluoric acid optionally with an inorganic acid, adjusting the resulting acidic aqueous solution to have a HF concentration not higher than 4 N, and contacting the acidic aqueous solution with a sparingly water-soluble organic solvent containing from 1.0 to 1.2 equivalents of a sparingly water-soluble quaternary ammonium compound per equivalent of the Ta in the aqueous solution, to selectively extract Ta in the aqueous solution in the organic solution; (b) adjusting the HF concentration of the Ni-containing aqueous solution from step (a) to from 0.5 to 5 N and contacting the aqueous solution with a sparingly water-soluble organic solvent containing from 1.0 to 2.0 equivalents of a sparingly water-soluble quaternary ammonium compound per equivalent of the Ni contained in the aqueous solution, to extract the Ni into the organic solution; (c) contacting the tantalum-containing organic solution obtained in (a) with an aqueous solution containing at least one inorganic acid and/or ammonium salt, and optionally HF, to remove impurities extracted concomitantly into the organic solution; and (d) contacting the Ni-containing organic solution obtained in (b) with an aqueous solution containing HF and optionally an inorganic acid and/or ammonium salt, to remove impurities extracted concomitantly into the organic solution.
The method provides a Ta compound and Ni compound, particularly tantalum pentoxide and niobium pentoxide, having high purities (99.999% to 99.9999%) at high yields.
摘要:
A developer for positive photoresists comprises an aqueous solution of (a) a quaternary ammonium hydroxide of the formula: wherein Ri, R 2 , R 3 and R 4 are each a C 1-4 alkyl, C1-5 or hydroxyalkyl group, and (b) at least one development modifier which is a water-soluble aliphatic ketone, cyclic ether or tertiary amine, and optionally, (c) at least one water-soluble primary or secondary amines as further development modifier. Preferred modifiers (b) are C3-8 ketones, 3- to 6-membered alicyclic ethers and C3-6 aliphatic amines. Hydroxide (a) can be tetramethyl ammonium or trimethyl ethanol ammonium hydroxide. A quinonediazide positive photoresist material is imagewise exposed and treated in the developer, to give a resist of high sensitivity and resolution, suitable for use in an electronic component.
摘要:
Crude tantalum is dissolved in an aqueous hydrofluoric acid containing solution to forr tantalum-fluorine complex anions which are then extracted into an organic solvent solution of a water-insoluble quaternary ammonium compound having great affinity for the tantalum anions. The organic solution is next washed with an aqueous solution containing an inorganic acid and/or an ammonium salt to remove impurities extracted with the tantalum. Tantalum hydroxide precipitated by subsequent treatment with aqueous ammonia is recovered and calcined to yield tantalum pentoxide having a purity of five or six nines.
摘要:
A method for obtaining a high-purity tantalum compound and a high-purity niobium compound comprises: (a) dissolving a crude compound containing tantalum and niobium in hydrofluoric acid optionally with an inorganic acid, adjusting the resulting acidic aqueous solution to have a HF concentration not higher than 4 N, and contacting the acidic aqueous solution with a sparingly water-soluble organic solvent containing from 1.0 to 1.2 equivalents of a sparingly water-soluble quaternary ammonium compound per equivalent of the Ta in the aqueous solution, to selectively extract Ta in the aqueous solution in the organic solution; (b) adjusting the HF concentration of the Ni-containing aqueous solution from step (a) to from 0.5 to 5 N and contacting the aqueous solution with a sparingly water-soluble organic solvent containing from 1.0 to 2.0 equivalents of a sparingly water-soluble quaternary ammonium compound per equivalent of the Ni contained in the aqueous solution, to extract the Ni into the organic solution; (c) contacting the tantalum-containing organic solution obtained in (a) with an aqueous solution containing at least one inorganic acid and/or ammonium salt, and optionally HF, to remove impurities extracted concomitantly into the organic solution; and (d) contacting the Ni-containing organic solution obtained in (b) with an aqueous solution containing HF and optionally an inorganic acid and/or ammonium salt, to remove impurities extracted concomitantly into the organic solution. The method provides a Ta compound and Ni compound, particularly tantalum pentoxide and niobium pentoxide, having high purities (99.999% to 99.9999%) at high yields.
摘要:
A developer for positive photoresists comprises an aqueous solution of (a) a quaternary ammonium hydroxide of the formula: wherein Ri, R 2 , R 3 and R 4 are each a C 1-4 alkyl, C1-5 or hydroxyalkyl group, and (b) at least one development modifier which is a water-soluble aliphatic ketone, cyclic ether or tertiary amine, and optionally, (c) at least one water-soluble primary or secondary amines as further development modifier. Preferred modifiers (b) are C3-8 ketones, 3- to 6-membered alicyclic ethers and C3-6 aliphatic amines. Hydroxide (a) can be tetramethyl ammonium or trimethyl ethanol ammonium hydroxide. A quinonediazide positive photoresist material is imagewise exposed and treated in the developer, to give a resist of high sensitivity and resolution, suitable for use in an electronic component.
摘要:
Crude tantalum is dissolved in an aqueous hydrofluoric acid containing solution to forr tantalum-fluorine complex anions which are then extracted into an organic solvent solution of a water-insoluble quaternary ammonium compound having great affinity for the tantalum anions. The organic solution is next washed with an aqueous solution containing an inorganic acid and/or an ammonium salt to remove impurities extracted with the tantalum. Tantalum hydroxide precipitated by subsequent treatment with aqueous ammonia is recovered and calcined to yield tantalum pentoxide having a purity of five or six nines.