公开(公告)号：EP2648234A4

公开(公告)日：2018-01-03

申请号：EP11844996

申请日：2011-11-29

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： MIURA KOHEI ,  INADA HIROSHI ,  IGUCHI YASUHIRO ,  SAITO TADASHI

IPC分类号： H01L31/10 ,  H01L21/02 ,  H01L21/205 ,  H01L27/146 ,  H01L31/0304

CPC分类号： H01L31/109 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02549 ,  H01L27/1446 ,  H01L27/1464 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/075 ,  H01L31/105 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 µm, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 µm or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer.

公开(公告)号：EP2750202A4

公开(公告)日：2015-05-06

申请号：EP13796444

申请日：2013-05-16

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： MIURA KOHEI ,  INADA HIROSHI ,  IGUCHI YASUHIRO ,  SAITO TADASHI

IPC分类号： H01L31/10 ,  H01L21/205 ,  H01L27/144 ,  H01L27/146 ,  H01L31/0304 ,  H01L31/105

CPC分类号： H01L31/18 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L27/1446 ,  H01L27/14634 ,  H01L27/1469 ,  H01L27/14694 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/103 ,  H01L31/105

公开(公告)号：EP2372787A4

公开(公告)日：2018-03-07

申请号：EP09834574

申请日：2009-07-24

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： IGUCHI YASUHIRO ,  MIURA KOHEI ,  INADA HIROSHI ,  NAGAI YOUICHI

IPC分类号： H01L31/0352 ,  H01L21/203 ,  H01L21/205 ,  H01L31/10 ,  H01L31/105

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631 ,  H01L31/105 ,  H01L31/184 ,  Y02E10/544

摘要： Provided are a light-receiving element which has sensitivity in the near-infrared region and in which a good crystal quality is easily obtained, a one-dimensional or two-dimensional array of the light-receiving elements is easily formed with a high accuracy, and a dark current can be reduced; a light-receiving element array; and methods for producing the same. A light-receiving element includes a group III-V compound semiconductor stacked structure including an absorption layer 3having a pn-junction 15 therein, wherein the absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, the pn-junction 15 is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity element in the absorption layer is 5 ×10 16 cm -3 or less.