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1.发明公开GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权III族氮化物半导体晶体，加工用于生产和III族氮化物半导体元件
公开(公告)号：EP1754810A4
公开(公告)日：2009-02-25
申请号：EP05727904
申请日：2005-03-30
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA FUMIO , NAKAHATA SEIJI , HIROTA RYU
IPC分类号： C30B29/38 , C30B9/12 , C30B11/00 , C30B11/06 , C30B29/40 , H01L21/208 , H01L33/00 , H01S5/323
CPC分类号： C30B9/12 , C30B11/00 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/0075 , H01S5/32341
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2.发明公开GROUP III NITRIDE CRYSTAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权III族氮化物晶体衬底，工艺用于生产和III族氮化物半导体元件
公开(公告)号：EP1736572A4
公开(公告)日：2009-02-25
申请号：EP05721657
申请日：2005-03-30
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA FUMIO , HIROTA RYU , NAKAHATA SEIJI
CPC分类号： C30B9/08 , C30B9/00 , C30B11/00 , C30B11/06 , C30B29/403
摘要： A method for producing a group III nitride crystal substrate comprising a step for introducing an alkali metal element-containing substance (1), a group III element-containing substance (2) and a nitrogen element-containing substance (3) into a reaction container (51), a step for forming a melt (5) containing at least an alkali metal element, group III element and nitrogen element in the reaction container (51), and a step for growing a group III nitride crystal (6) from the melt (5) is characterized in that the alkali metal element-containing substance (1) is handled within a dry container (100) wherein the moisture concentration is controlled to 1.0 ppm or less at least during the step wherein the alkali metal element-containing substance (1) is introduced into the reaction container (51). Consequently, there can be obtained a group III nitride crystal substrate having a small light absorption coefficient. Also disclosed is a group III nitride semiconductor device.
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3.发明公开METHOD FOR PROCESSING NITRIDE SEMICONDUCTOR CRYSTAL SURFACE AND NITRIDE SEMICONDUCTOR CRYSTAL OBTAINED BY SUCH METHOD 审中-公开用于处理氮化物HALBLEITERKRISTALLOBERFLûCHEN，并从这个过程中方法获得的氮化物半导体晶体
公开(公告)号：EP1560261A4
公开(公告)日：2008-02-20
申请号：EP04735986
申请日：2004-06-03
发明人： NAKAHATA SEIJI , HIROTA RYU , ISHIBASHI KEIJI , SASAKI TAKATOMO , MORI YUSUKE
IPC分类号： C30B29/38 , C30B29/40 , C30B33/00 , C30B33/10 , H01L21/306
CPC分类号： C30B29/403 , C30B29/38 , C30B33/00 , C30B33/10 , H01L21/30612
摘要： A method for processing a nitride semiconductor crystal surface is characterized in that a process liquid (15) containing at least Na, Li or Ca is brought into contact with the surface of a nitride semiconductor crystal (11). The process liquid (15) may be a liquid containing at least Na whose Na content is 5-95 mol%. The process liquid (15) may be a liquid containing at least Li whose Li content is 5-100 mol%. A nitride semiconductor crystal obtained by such a method is also disclosed which has a maximum surface scratch depth of 0.01 mum or less and an average degenerated layer thickness of 2 mum or less. Namely, the method for processing a nitride semiconductor crystal surface enables to reduce surface scratch depth and degenerated layer thickness, and the nitride semiconductor crystal obtained by such a method has a shallow surface scratch depth and a thin degenerated layer thickness.
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4.发明公开
公开(公告)号：EP1522612A4
公开(公告)日：2008-09-03
申请号：EP04725190
申请日：2004-04-01
发明人： NAKAHATA SEIJI , UEMATSU KOJI , HIROTA RYU
IPC分类号： C30B29/40 , C30B25/02 , C30B25/18 , C30B29/38 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/32 , H01L33/34 , H01S5/323 , H01L21/302 , H01L33/00 , H01S5/30
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02538 , H01L21/02642 , H01S5/323 , Y10T428/12674 , Y10T428/12681
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公开(公告)号：EP2194169A4
公开(公告)日：2012-03-14
申请号：EP08834769
申请日：2008-09-19
发明人： UEMATSU KOJI , YOSHIDA HIROAKI , HIROTA RYU , FUJIWARA SHINSUKE , TANAKA HARUKO
CPC分类号： C30B29/403 , C30B19/04
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6.发明公开PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开用于生产III族氮化物晶体，III族氮化物晶体衬底和III族氮化物半导体器件
公开(公告)号：EP2017375A4
公开(公告)日：2011-08-17
申请号：EP07831921
申请日：2007-11-15
发明人： HIROTA RYU , UEMATSU KOJI , KAWASE TOMOHIRO
IPC分类号： C30B29/38 , C30B19/12 , H01L21/205 , H01L21/208 , H01L33/00 , H01L33/32
CPC分类号： C30B29/403 , C30B9/00 , C30B19/00 , C30B33/10 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02625 , H01L21/02628 , H01L21/02639 , H01L33/0075 , H01L33/08 , H01L33/16 , H01L33/32
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7.发明公开METHOD FOR PRODUCTION OF GaxIn1-xN (0 x 1) CRYSTAL, GaxIn1-xN (0 x 1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCTION OF GaN CRYSTAL, GaN CRYSTAL SUBSTRATE AND PRODUCT 审中-公开用于生产镓中的X 1-XN（0 X 1）晶体，镓中的X 1-XN（0 X 1）晶体衬底，PROCESS FOR PRODUCING GaN晶体，GaN晶体衬底和产品
公开(公告)号：EP1930485A4
公开(公告)日：2010-06-09
申请号：EP06796499
申请日：2006-08-17
CPC分类号： C30B25/02 , C30B25/10 , C30B29/403 , C30B29/406
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8.发明公开III GROUP NITRIDE CRYSTAL AND METHOD FOR PREPARATION THEREOF, AND III GROUP NITRIDE CRYSTAL SUBSTRATE AND SEMICONDUCTOR DEVICE 审中-公开III族氮化物晶体及其制造方法和III族氮化物晶体衬底和半导体元件
公开(公告)号：EP1754811A4
公开(公告)日：2009-11-11
申请号：EP05730635
申请日：2005-04-15
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA FUMIO , NAKAHATA SEIJI , HIROTA RYU
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32
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