公开(公告)号：EP1736572B1

公开(公告)日：2012-06-20

申请号：EP05721657.4

申请日：2005-03-30

申请人： Sumitomo Electric Industries, Ltd. ,  Mori, Yusuke

发明人： SASAKI, Takatomo ,  MORI, Yusuke ,  YOSHIMURA, Masashi ,  KAWAMURA, Fumio ,  HIROTA, Ryu c/o Itami Works of Sumitomo Electric Ind., Ltd. ,  NAKAHATA, Seiji c/o Itami Works of Sumitomo Electric Ind., Ltd.

IPC分类号： C30B29/40

CPC分类号： C30B9/08 ,  C30B9/00 ,  C30B11/00 ,  C30B11/06 ,  C30B29/403

摘要： A method for producing a group III nitride crystal substrate comprising a step for introducing an alkali metal element-containing substance (1), a group III element-containing substance (2) and a nitrogen element-containing substance (3) into a reaction container (51), a step for forming a melt (5) containing at least an alkali metal element, group III element and nitrogen element in the reaction container (51), and a step for growing a group III nitride crystal (6) from the melt (5) is characterized in that the alkali metal element-containing substance (1) is handled within a dry container (100) wherein the moisture concentration is controlled to 1.0 ppm or less at least during the step wherein the alkali metal element-containing substance (1) is introduced into the reaction container (51). Consequently, there can be obtained a group III nitride crystal substrate having a small light absorption coefficient. Also disclosed is a group III nitride semiconductor device.

公开(公告)号：EP1754810B1

公开(公告)日：2011-05-18

申请号：EP05727904.4

申请日：2005-03-30

申请人： Sumitomo Electric Industries, Ltd. ,  Mori, Yusuke

发明人： SASAKI, Takatomo ,  MORI, Yusuke ,  YOSHIMURA, Masashi ,  KAWAMURA, Fumio ,  NAKAHATA, Seiji, c/o Itami Works ,  HIROTA, Ryu, c/o Itami Works

IPC分类号： C30B29/40

CPC分类号： C30B9/12 ,  C30B11/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/32341

摘要： Disclosed is a method for producing a group III nitride semiconductor crystal wherein an alloy (11) containing at least a group III metal element and an alkali metal element is put in a reaction container (1) and a nitrogen-containing substance (14) is introduced into the reaction container (1), so that the nitrogen-containing substance (14) is dissolved in an alloy melt (13) of the molten alloy (11) and there is grown a group III nitride semiconductor crystal (15). By this method, there can be efficiently obtained a group III nitride semiconductor crystal (15) having a low light absorption coefficient. Also disclosed is a group III nitride semiconductor device having a high luminous intensity.

公开(公告)号：EP1736573A4

公开(公告)日：2010-09-15

申请号：EP05727620

申请日：2005-03-31

申请人： PANASONIC CORP ,  MORI YUSUKE

发明人： MORI YUSUKE ,  MINEMOTO HISASHI ,  KITAOKA YASUO ,  KIDOGUCHI ISAO ,  KAWAMURA FUMIO ,  SASAKI TAKATOMO ,  TAKAHASHI YASUHITO

IPC分类号： C30B29/38 ,  C30B9/00 ,  C30B9/08 ,  C30B9/10

CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

公开(公告)号：EP1736572A1

公开(公告)日：2006-12-27

申请号：EP05721657.4

申请日：2005-03-30

申请人： Sumitomo Electric Industries, Ltd. ,  Mori, Yusuke

发明人： SASAKI, Takatomo ,  MORI, Yusuke ,  YOSHIMURA, Masashi ,  KAWAMURA, Fumio ,  HIROTA, Ryu ,  NAKAHATA, Seiji

IPC分类号： C30B29/38 ,  C30B9/10 ,  C30B11/06 ,  H01L21/208

CPC分类号： C30B9/08 ,  C30B9/00 ,  C30B11/00 ,  C30B11/06 ,  C30B29/403

摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance (1), a group III-element-containing substance (2) and a nitrogen-element-containing substance (3) into a reactor (51), forming a melt (5) containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor (51), and growing group III-nitride crystal (6) from the melt (5), and characterized by handling the alkali-metal-element-containing substance (1) in a drying container (100) in which moisture concentration is controlled to at most 1.0ppm at least in the step of introducing the alkali-metal-element-containing substance (1) into the reactor (51) is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

摘要翻译： 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质（1），含III族元素的物质（2）和含氮元素的物质（3 ）形成反应器（51），形成至少含有反应器（51）中的碱金属元素，第III族元素和氮元素的熔体（5），以及来自所述反应器（51）的生长III族氮化物晶体 熔融（5），其特征在于，在将水分浓度控制在1.0ppm以下的干燥容器（100）中处理含碱金属元素的物质（1），至少在引入碱金属 含有元素的物质（1）进入反应器（51）。 因此可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

公开(公告)号：EP1666520B1

公开(公告)日：2013-11-13

申请号：EP04773221.9

申请日：2004-09-10

申请人： NIKON CORPORATION ,  Sasaki, Takatomo ,  Mori, Yusuke ,  Takano, Kazufumi ,  Inoue, Tsuyoshi ,  Matsumura, Hiroyoshi ,  Adachi, Hiroaki

发明人： ADACHI, Hiroaki ,  KITANO, Hiroshi c/o Nikon Corporation

IPC分类号： C08J3/28 ,  B23K26/00 ,  B23K26/38 ,  B23K26/40 ,  B23K26/06

CPC分类号： C08J3/28 ,  B23K26/0006 ,  B23K26/0066 ,  B23K26/0624 ,  B23K26/38 ,  B23K2203/30 ,  B23K2203/42 ,  B23K2203/50

摘要： The ultraviolet short-pulse laser light emitted from the ultraviolet short-pulse laser light source 1 is focused on and caused to irradiate a macromolecular crystal 8 contained in a sample container 6 via a shutter 2, intensity adjusting element 3, irradiation position control mechanism 4, and focusing optical system 5. The sample container 6 is carried on a stage 7, and can be moved in three dimensions along the directions of the x, y and z axes in an x-y-z orthogonal coordinate system with the direction of the optical axis being taken as the z axis; furthermore, the sample container 6 can be rotated about the z axis. Working of the macromolecular crystal is performed by means of ultraviolet short-pulse laser light that is focused on and caused to irradiate the surface of the macromolecular crystal 8. In this way, various types of working can be securely performed on macromolecular crystals with little damage and by means of a simple operation.

公开(公告)号：EP1733836B1

公开(公告)日：2010-12-08

申请号：EP05728657.7

申请日：2005-03-30

申请人： NIKON CORPORATION ,  Adachi, Hiroaki ,  Sasaki, Takatomo ,  Mori, Yusuke ,  Takano, Kazufumi ,  Inoue, Tsuyoshi ,  Matsumura, Hiroyoshi

发明人： ADACHI, Hiroaki ,  KITANO, Hiroshi; c/o NIKON CORPORATION

IPC分类号： B23K26/12 ,  C07D213/84 ,  G01N23/20 ,  G01N1/28 ,  B23K26/00 ,  B23K26/14 ,  B23K26/38 ,  B23K26/40 ,  C08J3/18

CPC分类号： C30B33/06 ,  B23K26/0006 ,  B23K26/0066 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0624 ,  B23K26/0643 ,  B23K26/0665 ,  B23K26/123 ,  B23K26/14 ,  B23K26/38 ,  B23K2203/30 ,  B23K2203/42 ,  B23K2203/50 ,  C30B29/54

摘要： The short-pulse laser light 9 emitted from the short-pulse laser light source 1 is focused on and caused to irradiate an organic crystal 8 contained in a sample container 6 via a shutter 2, intensity adjusting element 3, irradiation position control mechanism 4, and focusing optical system 5. The sample container 6 is carried on a stage 7, and can be moved in three dimensions along the x axis, y axis and z axis in an x-y-z orthogonal coordinate system with the direction of the optical axis being taken as the z axis; furthermore, the sample container 6 can be rotated about the z axis. Working of the organic crystal 8 is performed by means of short-pulse laser light that is focused on and caused to irradiate the surface of the organic crystal 8. Prior to working, nitrogen is caused to jet onto the sample container 6 by a low-temperature gas jet device C that is a cooling device; consequently, the organic crystal 8 is cooled to -150°C or below. As a result, it is possible to work the object of working in a fixed state, and to increase the working efficiency by means of the short-pulse laser light that is used.

公开(公告)号：EP1733836A4

公开(公告)日：2009-04-15

申请号：EP05728657

申请日：2005-03-30

申请人： NIPPON KOGAKU KK ,  ADACHI HIROAKI ,  SASAKI TAKATOMO ,  MORI YUSUKE ,  TAKANO KAZUFUMI ,  INOUE TSUYOSHI ,  MATSUMURA HIROYOSHI

发明人： ADACHI HIROAKI ,  KITANO HIROSHI

IPC分类号： B23K26/12 ,  B23K26/00 ,  B23K26/03 ,  B23K26/06 ,  B23K26/14 ,  B23K26/38 ,  B23K26/40 ,  C07D213/84 ,  C08J3/18 ,  G01N1/28 ,  G01N23/20

CPC分类号： C30B33/06 ,  B23K26/0006 ,  B23K26/0066 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0624 ,  B23K26/0643 ,  B23K26/0665 ,  B23K26/123 ,  B23K26/14 ,  B23K26/38 ,  B23K2203/30 ,  B23K2203/42 ,  B23K2203/50 ,  C30B29/54

摘要： The short-pulse laser light 9 emitted from the short-pulse laser light source 1 is focused on and caused to irradiate an organic crystal 8 contained in a sample container 6 via a shutter 2, intensity adjusting element 3, irradiation position control mechanism 4, and focusing optical system 5. The sample container 6 is carried on a stage 7, and can be moved in three dimensions along the x axis, y axis and z axis in an x-y-z orthogonal coordinate system with the direction of the optical axis being taken as the z axis; furthermore, the sample container 6 can be rotated about the z axis. Working of the organic crystal 8 is performed by means of short-pulse laser light that is focused on and caused to irradiate the surface of the organic crystal 8. Prior to working, nitrogen is caused to jet onto the sample container 6 by a low-temperature gas jet device C that is a cooling device; consequently, the organic crystal 8 is cooled to -150°C or below. As a result, it is possible to work the object of working in a fixed state, and to increase the working efficiency by means of the short-pulse laser light that is used.

摘要翻译： 从短脉冲激光光源1发射的短脉冲激光光9聚焦在并使其照射在通过快门2包含在样品容器6的有机晶体8，强度调节元件3，照射位置控制机构4， 和聚焦光学系统5。样品容器6承载在阶段7中，并可以在沿x轴，y轴和z轴三个维度在XYZ正交坐标系与所述光轴的方向上移动被取作 z轴; 进一步，样品容器6可以绕z轴。 有机晶体8的工作是由一个致力于并由此对有机晶体的表面照射8.之前工作的短脉冲激光来进行，氮是由低引发的对喷射到样品容器6 温度的气体喷射装置C.这是一个冷却装置; 因此，有机晶体8被冷却至-150℃或以下。 其结果，能够工作在一个固定的工作状态的对象，并且以增加由所使用的短脉冲激光的手段工作效率。

公开(公告)号：EP1754810A1

公开(公告)日：2007-02-21

申请号：EP05727904.4

申请日：2005-03-30

申请人： Sumitomo Electric Industries, Ltd. ,  Mori, Yusuke

发明人： SASAKI, Takatomo ,  MORI, Yusuke ,  YOSHIMURA, Masashi ,  KAWAMURA, Fumio ,  NAKAHATA, Seiji, c/o Itami Works ,  HIROTA, Ryu, c/o Itami Works

IPC分类号： C30B29/38 ,  C30B11/06 ,  H01L21/208 ,  H01L33/00 ,  H01S5/323

CPC分类号： C30B9/12 ,  C30B11/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/32341

摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy (11) containing at least a group III-metal element and an alkali metal element in a reactor (1), introducing a nitrogen-containing substance (14) in the reactor (1), dissolving the nitrogen-containing substance (14) in an alloy melt (13) in which the alloy (11) has been melted, and growing group III-nitride semiconductor crystal (15) is provided. The group III-nitride semiconductor crystal (15) attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.

摘要翻译： 制备III族氮化物半导体晶体的方法包括以下步骤：在反应器（1）中容纳含有至少III族金属元素和碱金属元素的合金（11），引入含氮物质（14） 在反应器（1）中，将含氮物质（14）溶解在合金（11）熔融的合金熔体（13）中，生长III族氮化物半导体晶体（15）。 可以提供获得小吸收系数的III族氮化物半导体晶体（15）及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

公开(公告)号：EP1741807B1

公开(公告)日：2013-09-25

申请号：EP05736696.5

申请日：2005-04-27

申请人： Panasonic Corporation ,  Mori, Yusuke

发明人： MORI, Yusuke c/o Graduate School of Engineering ,  MINEMOTO, Hisashi c/o Matsushita El.Ind.Co.Ltd. ,  KITAOKA, Yasuo c/o Patsushita El.Ind.Co.Ltd. ,  KIDOGUCHI, Isao c/o Matsushita El.Ind.Co.Ltd. ,  KAWAMURA, Fumio c/o Graduate School of Engineering ,  SASAKI, Takatomo c/o Graduate School of Engineerin ,  UMEDA, Hidekazu ,  TAKAHASHI, Yasuhito c/o Matsushita El.Ind.Co.Ltd.

IPC分类号： C30B9/00 ,  C30B29/38

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

公开(公告)号：EP1741807A4

公开(公告)日：2009-07-08

申请号：EP05736696

申请日：2005-04-27

申请人： PANASONIC CORP ,  MORI YUSUKE

发明人： MORI YUSUKE ,  MINEMOTO HISASHI ,  KITAOKA YASUO ,  KIDOGUCHI ISAO ,  KAWAMURA FUMIO ,  SASAKI TAKATOMO ,  UMEDA HIDEKAZU ,  TAKAHASHI YASUHITO

IPC分类号： C30B9/00 ,  C30B9/10 ,  C30B29/38 ,  C30B35/00

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

摘要： An apparatus for production of a crystal of Group III element nitride and process for producing a crystal of Group III element nitride, by which a crystal of high quality can be produced. The crystal growth by means of this apparatus can be performed in, for example, the following manner. Raw material for crystal (131) and nitrogenous gas are introduced in reaction vessel (120) and heated by means of heater (110), and a crystal is grown in pressurized atmosphere. The above gas is delivered from gas supply unit (180) through a gas inlet of the reaction vessel into the reaction vessel (120), and discharged from a gas outlet of the reaction vessel into the interior of pressure tight vessel (102). As the above gas is directly, without passing through the pressure tight vessel (102), introduced into the reaction vessel (120), the mingling of impurities adhering to the pressure tight vessel (102), etc. into a field of crystal growth can be avoided. Further, as the above gas flows through the interior of the reaction vessel (120), there can be avoided, for example, condensation of vaporized alkali metal, etc. at the gas inlet, etc. and inflow thereof into the gas supply unit (180), etc. As a result, the quality of crystal of Group III element nitride obtained can be enhanced.