公开(公告)号：EP0379359B1

公开(公告)日：1994-08-03

申请号：EP90300506.4

申请日：1990-01-18

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Yoshida, Katsuhito, c/o Itami Works of ,  Tsuji, Kazuswo, c/o Itami Works of

IPC分类号： C30B29/04 ,  B01J3/06 ,  C30B29/38 ,  C30B29/40 ,  C30B25/02 ,  C30B25/18

CPC分类号： H01L33/32 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  C30B9/00 ,  C30B29/04 ,  C30B29/38 ,  H01L21/02376 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/20 ,  H01L29/207 ,  H01L29/267 ,  H01L33/007 ,  Y10S148/113 ,  Y10T428/30

摘要： A composite material useful as a diode capable of operating at a high temperature, i.e., 500 to 600 DEG C or a semiconductor optical device capable of emitting ultraviolet rays is provided which comprises single crystal diamond having electric insulation and single crystal cubic boron nitride formed on one surface of the single crystal diamond as a substrate in such a manner that the single crystal cubic boron nitride has the same plane index on the substrate.

公开(公告)号：EP0379359A3

公开(公告)日：1990-12-19

申请号：EP90300506.4

申请日：1990-01-18

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Yoshida, Katsuhito, c/o Itami Works of ,  Tsuji, Kazuswo, c/o Itami Works of

IPC分类号： C30B29/04 ,  B01J3/06 ,  C30B29/38 ,  C30B29/40 ,  C30B25/02 ,  C30B25/18

CPC分类号： H01L33/32 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  C30B9/00 ,  C30B29/04 ,  C30B29/38 ,  H01L21/02376 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/20 ,  H01L29/207 ,  H01L29/267 ,  H01L33/007 ,  Y10S148/113 ,  Y10T428/30

摘要： A composite material useful as a diode capable of operating at a high temperature, i.e., 500 to 600°C or a semiconductor optical device capable of emitting ultraviolet rays is provided which comprises single crystal diamond having electric insulation and single crystal cubic boron nitride formed on one surface of the single crystal diamond as a substrate in such a manner that the single crystal cubic boron nitride has the same plane index on the substrate.

公开(公告)号：EP0379359A2

公开(公告)日：1990-07-25

申请号：EP90300506.4

申请日：1990-01-18

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Yoshida, Katsuhito, c/o Itami Works of ,  Tsuji, Kazuswo, c/o Itami Works of

IPC分类号： C30B29/04 ,  B01J3/06 ,  C30B29/38 ,  C30B29/40 ,  C30B25/02 ,  C30B25/18

CPC分类号： H01L33/32 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  C30B9/00 ,  C30B29/04 ,  C30B29/38 ,  H01L21/02376 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/20 ,  H01L29/207 ,  H01L29/267 ,  H01L33/007 ,  Y10S148/113 ,  Y10T428/30

摘要： A composite material useful as a diode capable of operating at a high temperature, i.e., 500 to 600°C or a semiconductor optical device capable of emitting ultraviolet rays is provided which comprises single crystal diamond having electric insulation and single crystal cubic boron nitride formed on one surface of the single crystal diamond as a substrate in such a manner that the single crystal cubic boron nitride has the same plane index on the substrate.

摘要翻译： 提供了可用作能够在高温（即500至600℃）下操作的二极管的复合材料或能够发射紫外线的半导体光学器件，该复合材料包括形成有绝缘的单晶金刚石和单晶立方氮化硼 单晶金刚石的一个表面作为衬底，使得单晶立方氮化硼在衬底上具有相同的平面折射率。