-
公开(公告)号：EP4415497A3
公开(公告)日：2024-08-28
申请号：EP23205348.8
申请日：2023-10-23
发明人： LEE, Wonsok , LEE, Juho , KIM, Seunghyun , JUNG, Wooje , CHO, Minhee
IPC分类号： H10B12/00 , H01L29/786
CPC分类号： H10B12/05 , H01L29/7869 , H10B12/0335 , H10B12/315 , H01L29/78642
摘要： A semiconductor memory device, which may include a substrate, a lower conductive line on the substrate, an isolation insulating layer on the lower conductive line and including a channel trench, a channel structure inside the channel trench and including a first oxide semiconductor material, an interfacial conductive pattern between the lower conductive line and a lower surface of the channel structure, a gate dielectric layer that covers the channel structure within the channel trench, an upper conductive line on the gate dielectric layer within the channel trench, a conductive contact pattern on the channel structure, an interfacial oxide semiconductor pattern between the channel structure and the conductive contact pattern and including a second oxide semiconductor material, and a capacitor structure including a lower electrode connected to the conductive contact pattern.
-
公开(公告)号：EP4415497A2
公开(公告)日：2024-08-14
申请号：EP23205348.8
申请日：2023-10-23
发明人： LEE, Wonsok , LEE, Juho , KIM, Seunghyun , JUNG, Wooje , CHO, Minhee
IPC分类号： H10B12/00 , H01L29/786
CPC分类号： H10B12/05 , H01L29/7869 , H10B12/0335 , H10B12/315 , H01L29/78642
摘要： A semiconductor memory device, which may include a substrate, a lower conductive line on the substrate, an isolation insulating layer on the lower conductive line and including a channel trench, a channel structure inside the channel trench and including a first oxide semiconductor material, an interfacial conductive pattern between the lower conductive line and a lower surface of the channel structure, a gate dielectric layer that covers the channel structure within the channel trench, an upper conductive line on the gate dielectric layer within the channel trench, a conductive contact pattern on the channel structure, an interfacial oxide semiconductor pattern between the channel structure and the conductive contact pattern and including a second oxide semiconductor material, and a capacitor structure including a lower electrode connected to the conductive contact pattern.
-
搜索结果
2 条记录 (耗时 0.008 秒)
