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公开(公告)号：EP4415497A3
公开(公告)日：2024-08-28
申请号：EP23205348.8
申请日：2023-10-23
发明人： LEE, Wonsok , LEE, Juho , KIM, Seunghyun , JUNG, Wooje , CHO, Minhee
IPC分类号： H10B12/00 , H01L29/786
CPC分类号： H10B12/05 , H01L29/7869 , H10B12/0335 , H10B12/315 , H01L29/78642
摘要： A semiconductor memory device, which may include a substrate, a lower conductive line on the substrate, an isolation insulating layer on the lower conductive line and including a channel trench, a channel structure inside the channel trench and including a first oxide semiconductor material, an interfacial conductive pattern between the lower conductive line and a lower surface of the channel structure, a gate dielectric layer that covers the channel structure within the channel trench, an upper conductive line on the gate dielectric layer within the channel trench, a conductive contact pattern on the channel structure, an interfacial oxide semiconductor pattern between the channel structure and the conductive contact pattern and including a second oxide semiconductor material, and a capacitor structure including a lower electrode connected to the conductive contact pattern.
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公开(公告)号：EP4415497A2
公开(公告)日：2024-08-14
申请号：EP23205348.8
申请日：2023-10-23
发明人： LEE, Wonsok , LEE, Juho , KIM, Seunghyun , JUNG, Wooje , CHO, Minhee
IPC分类号： H10B12/00 , H01L29/786
CPC分类号： H10B12/05 , H01L29/7869 , H10B12/0335 , H10B12/315 , H01L29/78642
摘要： A semiconductor memory device, which may include a substrate, a lower conductive line on the substrate, an isolation insulating layer on the lower conductive line and including a channel trench, a channel structure inside the channel trench and including a first oxide semiconductor material, an interfacial conductive pattern between the lower conductive line and a lower surface of the channel structure, a gate dielectric layer that covers the channel structure within the channel trench, an upper conductive line on the gate dielectric layer within the channel trench, a conductive contact pattern on the channel structure, an interfacial oxide semiconductor pattern between the channel structure and the conductive contact pattern and including a second oxide semiconductor material, and a capacitor structure including a lower electrode connected to the conductive contact pattern.
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公开(公告)号：EP4262181A1
公开(公告)日：2023-10-18
申请号：EP22739611.6
申请日：2022-01-11
发明人： KIM, Seunghyun , KIM, Baekgyeong , KIM, Gangyoul , KIM, Misun , KIM, Sangheon , SEO, Mira , CHOI, Kwangyong , PARK, Dongyoon , LIM, Yeunwook
摘要： An electronic device according to various embodiments comprises a communication module, at least one microphone, and a processor. The processor can be configured to: be connected to an external device by means of the communication module; switch a call audio signal path to an external device output path in response to being call-connected to an opponent device; duplicate a call audio signal (Rx in) transmitted from the opponent device, provide a first signal to an echo removal module, and provide a second signal to the external device via the external device output path; measure latency between the external device and the electronic device; variably adjust the size of a dynamic buffer for removing echo, by applying the measured latency; generate a reference signal delayed in the second signal, by means of the adjusted dynamic buffer; and remove an echo signal, with respect to the first signal generated from a speaker of the external device, from a microphone input signal obtained from the at least one microphone, on the basis of the generated reference signal.
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