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公开(公告)号：EP2720327B1
公开(公告)日：2016-06-29
申请号：EP13187255.8
申请日：2013-10-03
发明人： Kim, Taek , Shcherbatko, Igor
CPC分类号： H01S5/105 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/10 , H01S5/1032 , H01S5/12 , H01S5/1206 , H01S5/1218 , H01S5/18308 , H01S5/18341 , H01S5/18361 , H01S5/18363 , H01S5/1838 , H01S5/2018 , H01S5/2063
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公开(公告)号：EP2393129A3
公开(公告)日：2013-10-02
申请号：EP11152092.0
申请日：2011-01-25
发明人： Kim, Taek
摘要： Light-emitting devices (LED) and methods of manufacturing the same are disclosed. A LED includes a first type semiconductor layer, a nano array layer that includes a plurality of nano structures each including a first type semiconductor nano core selectively grown from the first type semiconductor layer, and an active layer and a second type semiconductor layer sequentially grown from a side surface of the first type semiconductor nano core, and that is formed in a selective growth region formed in a surface of the first type semiconductor layer, a first electrode layer that is formed to be used when a voltage is applied to the first type semiconductor layer and formed in a predetermined pattern connecting regions that do not correspond to the selective growth region in the first type semiconductor layer, a second electrode layer formed to be used when a voltage is applied to the second type semiconductor layer on the plurality of nano structures, and an insulating layer formed between the first electrode layer and the second electrode layer so that the first electrode layer is insulated from the second electrode layer.
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3.发明公开Light-emitting devices and methods of manufacturing the same 审中-公开Lichtemittierende Vorrichtungen und Verfahren zu ihrer Herstellung
公开(公告)号：EP2393129A2
公开(公告)日：2011-12-07
申请号：EP11152092.0
申请日：2011-01-25
发明人： Kim, Taek
IPC分类号： H01L33/08
摘要： Light-emitting devices (LED) and methods of manufacturing the same are disclosed. A LED includes a first type semiconductor layer, a nano array layer that includes a plurality of nano structures each including a first type semiconductor nano core selectively grown from the first type semiconductor layer, and an active layer and a second type semiconductor layer sequentially grown from a side surface of the first type semiconductor nano core, and that is formed in a selective growth region formed in a surface of the first type semiconductor layer, a first electrode layer that is formed to be used when a voltage is applied to the first type semiconductor layer and formed in a predetermined pattern connecting regions that do not correspond to the selective growth region in the first type semiconductor layer, a second electrode layer formed to be used when a voltage is applied to the second type semiconductor layer on the plurality of nano structures, and an insulating layer formed between the first electrode layer and the second electrode layer so that the first electrode layer is insulated from the second electrode layer.
摘要翻译： 公开了发光器件（LED）及其制造方法。 LED包括第一类型半导体层，纳米阵列层，其包括多个纳米结构，每个纳米结构包括从第一类型半导体层选择性地生长的第一类型半导体纳米芯，以及从第一类半导体层顺次生长的有源层和第二类型半导体层 所述第一型半导体纳米芯的侧面形成在形成于所述第一型半导体层的表面的选择性生长区域中的第一电极层，所述第一电极层形成为当对所述第一型半导体层施加电压时使用的第一电极层 半导体层，并且以与第一类型半导体层中的选择生长区域不对应的预定图案形成，形成为在多个纳米级上向第二类型半导体层施加电压时形成的第二电极层 结构，以及形成在第一电极层和第二电极层之间的绝缘层，使得第一电极 层与第二电极层绝缘。
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公开(公告)号：EP2642536A3
公开(公告)日：2015-07-15
申请号：EP12188851.5
申请日：2012-10-17
发明人： Kim, Taek
摘要： According to example embodiments, a white light-emitting diode may be configured to emit white light without a phosphor. According to example embodiments, a white light-emitting diode may include a first semiconductor layer (120) that includes a plurality of hexagonal-pyramid shape nanostructures (122) that protrude upwards from an upper surface of the first semiconductor layer, at least two multi-quantum well layers (140, 150) that are sequentially stacked on the hexagonal-pyramid shape nanostructures; and a second semiconductor layer (160) on the multi-quantum well layers. The at least two multi-quantum well layers may be configured to generate lights having different wavelengths, and white light may be generated by mixing the lights having different wavelengths.
摘要翻译： 根据示例实施例，白光发射二极管可以被配置为发射白光而没有磷光体。 根据示例实施例，白色发光二极管可以包括：第一半导体层（120），其包括从第一半导体层的上表面向上突出的多个六角锥形纳米结构（122）;至少两个多 - 量子阱层（140,150），其依次堆叠在六角锥形纳米结构上; 和多量子阱层上的第二半导体层（160）。 所述至少两个多量子阱层可以被配置为产生具有不同波长的光，并且可以通过混合具有不同波长的光来产生白光。
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5.发明公开Hybrid laser light sources for photonic integrated circuits 审中-公开Hybride Laserlichtquellenfürphotonische integrierte Schaltungen
公开(公告)号：EP2618434A2
公开(公告)日：2013-07-24
申请号：EP12197785.4
申请日：2012-12-18
发明人： Min, Bok-ki , Kim, Taek , Park, Young-soo
CPC分类号： H01S5/18358 , H01S5/021 , H01S5/0215 , H01S5/02248 , H01S5/026 , H01S5/1032 , H01S5/105 , H01S5/18325 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/2018 , H01S5/2031
摘要： A light source for a photonic integrated circuit may comprise a reflection coupling layer formed on a substrate in which an optical waveguide is provided, at least one side of the reflection coupling layer being optically connected to the optical waveguide; an optical mode alignment layer provided on the reflection coupling layer; and/or an upper structure provided on the optical mode alignment layer and including an active layer for generating light and a reflection layer provided on the active layer. A light source for a photonic integrated circuit may comprise a lower reflection layer; an optical waveguide optically connected to the lower reflection layer; an optical mode alignment layer on the lower reflection layer; an active layer on the optical mode alignment layer; and/or an upper reflection layer on the active layer.
摘要翻译： 用于光子集成电路的光源可以包括形成在其中设置有光波导的基板上的反射耦合层，反射耦合层的至少一侧光学连接到光波导; 设置在反射耦合层上的光学模式取向层; 和/或设置在光学模式对准层上的上部结构，并且包括用于产生光的有源层和设置在有源层上的反射层。 光子集成电路的光源可以包括下反射层; 光学连接到下反射层的光波导; 在下反射层上的光学取向层; 光学取向层上的有源层; 和/或有源层上的上反射层。
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6.发明公开Modulator integrated semiconductor laser device 审中-公开Halbleiterlaservorrichtung mit integriertem调制器
公开(公告)号：EP1693936A2
公开(公告)日：2006-08-23
申请号：EP06250163.0
申请日：2006-01-13
发明人： Kim, Taek
CPC分类号： H01S5/18383 , H01S3/109 , H01S5/041 , H01S5/0601 , H01S5/141 , H01S5/18302
摘要： A modulator integrated semiconductor laser device is provided. In the modulator integrated semiconductor laser device, a lower DBR (distributed Bragg reflector) layer (61) is formed on the substrate (60), an active layer (62) is formed on the lower DBR layer and includes a plurality of barrier layers alternating with a plurality of quantum well layers, and an external mirror (71) is spaced apart from a top of the active layer to output a portion of light emitted from the active layer by transmission and to reflect the remainder to the active layer. Two of the plurality of barrier layers (65a,65b) that contact both sides of at least one (65c) of the plurality of quantum well layers are doped with different types.
摘要翻译： 提供了一种调制器集成半导体激光器件。 在调制器集成半导体激光器件中，在衬底（60）上形成下DBR（分布式布拉格反射器）层（61），在下DBR层上形成有源层（62），并且包括多个阻挡层交替 具有多个量子阱层，并且外部反射镜（71）与有源层的顶部间隔开，以通过透射输出从有源层发射的光的一部分并将其余部分反射到有源层。 与多个量子阱层中的至少一个（65c）的两侧接触的多个阻挡层（65a，65b）中的两个被掺杂有不同类型。
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7.发明公开Hybrid vertical cavity laser for photonic integrated circuit 有权Hybrider Vertikalresonatorlaserfürintegrierte photonische Schaltung
公开(公告)号：EP2720327A1
公开(公告)日：2014-04-16
申请号：EP13187255.8
申请日：2013-10-03
发明人： Kim, Taek , Shcherbatko, Igor
CPC分类号： H01S5/105 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/10 , H01S5/1032 , H01S5/12 , H01S5/1206 , H01S5/1218 , H01S5/18308 , H01S5/18341 , H01S5/18361 , H01S5/18363 , H01S5/1838 , H01S5/2018 , H01S5/2063
摘要： A hybrid vertical cavity laser for a photonic integrated circuit (PIC) includes: a grating mirror (120) between first and second low refractive index layers (112, 140), an optical waveguide (130) optically coupled to one side of the grating mirror, a III-V semiconductor layer including an active layer (152) on an upper one of the first and second low refractive index layers, and a top mirror (160) on the III-V semiconductor layer. The grating mirror includes a plurality of bar-shaped low refractive index material portions (121, 122) arranged parallel to each other. The low refractive index material portions include a plurality of first portions (121) having a first width (W1) and a plurality of second portions (122) having second width (W2) in a width direction. The first and second widths are different. Alternatively, the grating mirror may include bars arranged in a two-dimensional array.
摘要翻译： 一种用于光子集成电路（PIC）的混合垂直腔体激光器包括：在第一和第二低折射率层（112,140）之间的光栅反射镜（120），光学波导（130），光学耦合到光栅镜的一侧 ，包括在所述第一和第二低折射率层的上部上的有源层（152）和所述III-V半导体层上的顶部反射镜（160）的III-V半导体层。 光栅镜包括彼此平行设置的多个棒状低折射率材料部分（121,122）。 低折射率材料部分包括具有第一宽度（W1）的多个第一部分（121）和在宽度方向上具有第二宽度（W2）的多个第二部分（122）。 第一和第二宽度是不同的。 或者，光栅镜可以包括以二维阵列布置的条。
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公开(公告)号：EP2642536A2
公开(公告)日：2013-09-25
申请号：EP12188851.5
申请日：2012-10-17
发明人： Kim, Taek
摘要： According to example embodiments, a white light-emitting diode may be configured to emit white light without a phosphor. According to example embodiments, a white light-emitting diode may include a first semiconductor layer (120) that includes a plurality of hexagonal-pyramid shape nanostructures (122) that protrude upwards from an upper surface of the first semiconductor layer, at least two multi-quantum well layers (140, 150) that are sequentially stacked on the hexagonal-pyramid shape nanostructures; and a second semiconductor layer (160) on the multi-quantum well layers. The at least two multi-quantum well layers may be configured to generate lights having different wavelengths, and white light may be generated by mixing the lights having different wavelengths.
摘要翻译： 根据示例性实施例，白色发光二极管可以被配置为发射没有荧光体的白光。 根据示例性实施例，白色发光二极管可以包括第一半导体层（120），其包括从第一半导体层的上表面向上突出的多个六角锥形纳米结构（122），至少两个多 - 顺序堆叠在六角锥形纳米结构上的量子阱层（140,150）; 以及多量子阱层上的第二半导体层（160）。 所述至少两个多量子阱层可以被配置为产生具有不同波长的光，并且可以通过混合具有不同波长的光来产生白光。
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9.发明公开
公开(公告)号：EP1608049A1
公开(公告)日：2005-12-21
申请号：EP05253523.4
申请日：2005-06-08
发明人： Kim, Taek
CPC分类号： H01S5/141 , H01S5/041 , H01S5/18383 , H01S5/18397
摘要： The number and type of quantum wells in a multi-layer gain structure of an external cavity surface emitting laser (VECSEL) are controlled to provide output light of more than one coherent wavelength. The number and type of layers in a multiplayer mirror provides a dual wavelength reflector.
摘要翻译： 控制外腔表面发射激光器（VECSEL）的多层增益结构中的量子阱的数量和类型以提供多于一个相干波长的输出光。 多人镜中的层数和类型提供了双波长反射器。
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10.发明公开Semiconductor dies, light-emitting devices, methods of manufacturing and methods of generating multi-wavelength light 审中-公开半导体芯片，发光器件，制造工艺和用于与多个波长产生光的方法
公开(公告)号：EP2390930A2
公开(公告)日：2011-11-30
申请号：EP11167854.6
申请日：2011-05-27
发明人： Kim, Taek
摘要： A semiconductor die includes at least one first region (118) and at least one second region (142). The at least one first region is configured to emit light having at least a first wavelength. The at least one second region is configured to emit light having at least a second wavelength, which is different from the first wavelength.
摘要翻译： 一种半导体，其包括至少一个第一区域（118）和至少一个第二区域（142）。 所述至少一个第一区被配置成发射具有至少第一波长的光。 所述至少一个第二区域被配置成发射具有至少第二波长，所有这些是与第一波长不同。
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