摘要:
Disclosed is a method of forming a metal pattern, the method comprising depositing a dielectric substrate on a supporting substrate; forming a latent mask pattern of a metal pattern on the dielectric substrate; etching the dielectric substrate exposed by the latent mask pattern; forming a seed layer on the supporting substrate by activating the supporting substrate; removing the latent mask pattern and the portion of the seed layer disposed on the latent mask pattern through a lift-off process; and plating a metal layer on the patterned seed layer.