公开(公告)号：EP4243063A3

公开(公告)日：2023-11-15

申请号：EP22213564.2

申请日：2022-12-14

申请人： Samsung Electronics Co., Ltd.

发明人： SONG, Seunghyun ,  KIM, Pilkwang ,  YOU, Joohyung ,  KIM, Sungmin ,  PARK, Yonghee ,  SONG, Young-Seok ,  OKAGAKI, Takeshi

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/775

摘要： Disclosed are semiconductor devices and fabrication methods thereof. The semiconductor device includes a substrate including first (NR1) and second (PR1) regions, a device isolation pattern (ST) in the substrate, a lower separation dielectric pattern (BDI) on the first region of the substrate, first channel patterns (CH1) on the lower separation dielectric pattern, a first gate electrode (GE1) on the first channel patterns and including a first gate part between the lower separation dielectric pattern and a lowermost first channel pattern, and first source/drain patterns (SD1) on opposite sides of the first gate electrode and in contact with lateral surfaces of the first channel patterns. A bottom surface of the lower separation dielectric pattern is at a level higher than or equal to that of a bottom surface of the device isolation pattern. A top end of the lower separation dielectric pattern is at a level higher than that of a bottom surface of the first gate part.

公开(公告)号：EP4343849A3

公开(公告)日：2024-05-22

申请号：EP23196798.5

申请日：2023-09-12

申请人： Samsung Electronics Co., Ltd.

发明人： SONG, Seunghyun ,  KIM, Minsuk ,  KIM, Pilkwang ,  OKAGAKI, Takeshi ,  KIM, Geunmyeong ,  KIM, Ahyoung ,  KIM, Yoonsuk

IPC分类号： H01L29/06 ,  H01L21/283 ,  H01L23/528 ,  H01L27/092 ,  H01L29/423 ,  H01L21/336 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01L21/16

CPC分类号： H01L29/42392 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/775 ,  H01L29/66439 ,  H01L27/092 ,  H01L29/7848 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/66545 ,  H01L23/5286 ,  H01L21/283 ,  H01L29/0653 ,  H01L29/1079 ,  H01L29/4175

摘要： An integrated circuit device includes a back side interconnection structure extending in a first horizontal direction. An active substrate includes a fin-type active area extending in the first horizontal direction on the back side interconnection structure. A metal silicide film is between the back side interconnection structure and the active substrate. A plurality of gate structures extends in a second horizontal direction perpendicular to the first horizontal direction on the active substrate. A first source/drain area and a second source/drain area are spaced apart from each other in the first horizontal direction with the plurality of gate structures therebetween on the active substrate. The first source/drain area directly contacts the active substrate. The second source/drain area is spaced apart from the active substrate and insulated from the active substrate.

公开(公告)号：EP4343849A2

公开(公告)日：2024-03-27

申请号：EP23196798.5

申请日：2023-09-12

申请人： Samsung Electronics Co., Ltd.

发明人： SONG, Seunghyun ,  KIM, Minsuk ,  KIM, Pilkwang ,  OKAGAKI, Takeshi ,  KIM, Geunmyeong ,  KIM, Ahyoung ,  KIM, Yoonsuk

IPC分类号： H01L29/06 ,  H01L21/283 ,  H01L23/528 ,  H01L27/092 ,  H01L29/423 ,  H01L21/336 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01L21/16

摘要： An integrated circuit device includes a back side interconnection structure extending in a first horizontal direction. An active substrate includes a fin-type active area extending in the first horizontal direction on the back side interconnection structure. A metal silicide film is between the back side interconnection structure and the active substrate. A plurality of gate structures extends in a second horizontal direction perpendicular to the first horizontal direction on the active substrate. A first source/drain area and a second source/drain area are spaced apart from each other in the first horizontal direction with the plurality of gate structures therebetween on the active substrate. The first source/drain area directly contacts the active substrate. The second source/drain area is spaced apart from the active substrate and insulated from the active substrate.

公开(公告)号：EP4243063A2

公开(公告)日：2023-09-13

申请号：EP22213564.2

申请日：2022-12-14

申请人： Samsung Electronics Co., Ltd.

发明人： SONG, Seunghyun ,  KIM, Pilkwang ,  YOU, Joohyung ,  KIM, Sungmin ,  PARK, Yonghee ,  SONG, Young-Seok ,  OKAGAKI, Takeshi

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/775

摘要： Disclosed are semiconductor devices and fabrication methods thereof. The semiconductor device includes a substrate including first (NR1) and second (PR1) regions, a device isolation pattern (ST) in the substrate, a lower separation dielectric pattern (BDI) on the first region of the substrate, first channel patterns (CH1) on the lower separation dielectric pattern, a first gate electrode (GE1) on the first channel patterns and including a first gate part between the lower separation dielectric pattern and a lowermost first channel pattern, and first source/drain patterns (SD1) on opposite sides of the first gate electrode and in contact with lateral surfaces of the first channel patterns. A bottom surface of the lower separation dielectric pattern is at a level higher than or equal to that of a bottom surface of the device isolation pattern. A top end of the lower separation dielectric pattern is at a level higher than that of a bottom surface of the first gate part.