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公开(公告)号：EP4362095A1
公开(公告)日：2024-05-01
申请号：EP23206035.0
申请日：2023-10-26
发明人： DO, Kyoungil , JUNG, Jinwoo , SONG, Jooyoung , LEE, Mijin , JEON, Chanhee
IPC分类号： H01L27/02
CPC分类号： H01L27/0262
摘要： A device including a silicon controlled rectifier including an anode and a cathode; at least one first transistor connected between the anode and a gate of the silicon controlled rectifier; and a second transistor including a source connected to one from among the cathode or the anode, and a drain connected to a body of the at least one first transistor.
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公开(公告)号：EP4394877A2
公开(公告)日：2024-07-03
申请号：EP23220372.9
申请日：2023-12-27
发明人： DO, Kyoungil , JUNG, Jinwoo , SONG, Jooyoung , LEE, Mijin , JEON, Chanhee
IPC分类号： H01L27/02
CPC分类号： H01L27/0248
摘要： A device, including a first silicon controlled rectifier comprising a first anode connected to a first node, a first cathode connected to a pad, and a first gate; a second silicon controlled rectifier comprising a second anode connected to the pad, a second cathode connected to a second node, and a second gate; and a back diode forwardly connected from the second node to the first gate.
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公开(公告)号：EP4404262A1
公开(公告)日：2024-07-24
申请号：EP23220525.2
申请日：2023-12-28
发明人： DO, Kyoungil , JUNG, Jinwoo , SONG, Jooyoung , JEON, Chanhee
CPC分类号： H01L27/0262 , H01L29/74
摘要： Provided is a device including a first clamp circuit electrically connected between a first node and a second node, and a second clamp circuit electrically connected between the second node and a third node, wherein the first clamp circuit includes a first silicon controlled rectifier (SCR) including a first region of a first conductivity type electrically connected to the first node, a second region of a second conductivity type, a third region of the first conductivity type, and a fourth region of the second conductivity type electrically connected to the second node, and a first gate electrode disposed over a channel region including a junction of the second region and the third region between the first region and the fourth region.
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公开(公告)号：EP4394877A3
公开(公告)日：2024-07-24
申请号：EP23220372.9
申请日：2023-12-27
发明人： DO, Kyoungil , JUNG, Jinwoo , SONG, Jooyoung , LEE, Mijin , JEON, Chanhee
IPC分类号： H01L27/02
CPC分类号： H01L27/0248 , H01L27/0262
摘要： A device, including a first silicon controlled rectifier comprising a first anode connected to a first node, a first cathode connected to a pad, and a first gate; a second silicon controlled rectifier comprising a second anode connected to the pad, a second cathode connected to a second node, and a second gate; and a back diode forwardly connected from the second node to the first gate.
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公开(公告)号：EP4432356A1
公开(公告)日：2024-09-18
申请号：EP24151090.8
申请日：2024-01-10
发明人： SONG, Jongkyu , HEO, Jin , KIM, Minho , SONG, Jooyoung , LEE, Eunsuk , JEON, Chanhee
CPC分类号： H01L27/0262 , H01L29/083 , H01L29/7436
摘要： Disclosed is an electrostatic discharge protection device which includes a substrate including a first well having a first conductivity type and a second well surrounding the first well, first to fifth diffusion regions formed on the first well, and sixth and seventh diffusion regions formed on the second well. The second diffusion region surrounds the first diffusion region, the fourth diffusion region surrounds the fifth diffusion region, and the fifth diffusion region surrounds the second diffusion region and the fourth diffusion region. The sixth diffusion region surrounds the fifth diffusion region, and the seventh diffusion region surrounds the sixth diffusion region. The sixth and seventh diffusion regions are connected to an anode electrode, and the first to fifth diffusion regions are connected a cathode electrode.
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公开(公告)号：EP4411818A1
公开(公告)日：2024-08-07
申请号：EP23205440.3
申请日：2023-10-24
发明人： HEO, Jin , SONG, Jongkyu , KIM, Minho , SONG, Jooyoung , JEON, Chanhee
IPC分类号： H01L27/02 , H03K19/003
CPC分类号： H01L27/0266 , H01L27/0285 , H03K19/00315
摘要： A semiconductor device (200) is provided. The semiconductor device (200) includes: a first power pad (201); a second power pad (202); a signal pad (203); a clamping circuit (230) connected between the first power pad (201) and the second power pad (202); a driving circuit (210) connected to the signal pad (203) and including a pull-up circuit and a pull-down circuit; and a first gate-off circuit (220) connected to the pull-down circuit. The first gate-off circuit (220) is configured to connect a gate of at least one pull-down element (PD) included in the pull-down circuit and a source of the at least one pull-down element (PD) to each other during an electrostatic discharge, ESD, event in which a high voltage is applied to the signal pad (203), and control a current generated by the high voltage to flow to the clamping circuit (230).
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公开(公告)号：EP4394876A3
公开(公告)日：2024-07-24
申请号：EP23220265.5
申请日：2023-12-27
发明人： DO, Kyoungil , JUNG, Jinwoo , SONG, Jooyoung , LEE, Mijin , JEON, Chanhee
IPC分类号： H01L27/02 , H01L29/747
CPC分类号： H01L27/0248 , H01L27/0262 , H01L29/747 , H01L27/0259
摘要： A device including a first clamp circuit connected between a first node and a second node, wherein the first clamp circuit includes: a symmetric bipolar transistor comprising a control terminal, a first current terminal and a second current terminal, wherein the first current terminal and the second current terminal are symmetrical to each other with respect to the control terminal; a first bipolar transistor electrically connected to the symmetric bipolar transistor and to the first node; and a second bipolar transistor electrically connected to the symmetric bipolar transistor and to the second node.
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公开(公告)号：EP4394876A2
公开(公告)日：2024-07-03
申请号：EP23220265.5
申请日：2023-12-27
发明人： DO, Kyoungil , JUNG, Jinwoo , SONG, Jooyoung , LEE, Mijin , JEON, Chanhee
IPC分类号： H01L27/02
CPC分类号： H01L27/0248
摘要： A device including a first clamp circuit connected between a first node and a second node, wherein the first clamp circuit includes: a symmetric bipolar transistor comprising a control terminal, a first current terminal and a second current terminal, wherein the first current terminal and the second current terminal are symmetrical to each other with respect to the control terminal; a first bipolar transistor electrically connected to the symmetric bipolar transistor and to the first node; and a second bipolar transistor electrically connected to the symmetric bipolar transistor and to the second node.
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公开(公告)号：EP4345899A1
公开(公告)日：2024-04-03
申请号：EP23192386.3
申请日：2023-08-21
发明人： SONG, Jongkyu , KIM, Minho , HEO, Jin , DO, Kyoungil , SONG, Jooyoung , JEON, Chanhee
摘要： An electro-static discharge protection device includes a substrate that includes a first well that has a first conductive type and a second well that has a second conductive type, and first to eighth diffusion regions formed on the first well and the second well. At least a portion of the diffusion regions formed in the first well are connected to a first electrode, and at least a portion of diffusion regions formed in a second well are connected to a second electrode. The contact between one of diffusion regions formed in the first well and an N well forms a trigger diode. A junction between one of diffusion regions formed in a second well and a P well forms a trigger diode. The trigger diodes are electrically connected to each other.
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