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    ELECTROSTATIC DISCHARGE PROTECTION CIRCUITS AND STRUCTURES AND METHODS OF MANUFACTURE
    4.
    发明公开
    ELECTROSTATIC DISCHARGE PROTECTION CIRCUITS AND STRUCTURES AND METHODS OF MANUFACTURE 审中-公开
    电路防止电火花和结构制造方法

    公开(公告)号：EP3072154A1

    公开(公告)日：2016-09-28

    申请号：EP13897742.6

    申请日：2013-11-22

    申请人： Freescale Semiconductor, Inc.

    发明人： BESSE, Patrice ,  LAINE, Jean Philippe ,  ROLLAND, Eric Pierre

    IPC分类号： H01L27/04

    CPC分类号： H01L27/0262 ,  H01L21/761 ,  H01L21/76264 ,  H01L27/0259 ,  H01L27/0292 ,  H01L29/0649 ,  H01L29/45 ,  H01L29/87

    摘要： An ESD protection circuit and device structure comprises five transistors, two PNP and three NPN. The five transistors are coupled together so that a first NPN and PNP pair constitute a first silicon controlled rectifier, SCR. The NPN transistor 102 of the first SCR and a third transistor of NPN type are coupled so that they constitute a Darlington pair. A further NPN and PNP pair are coupled together to form a second SCR with the collector of the PNP transistor of the first SCR being coupled with the emitter of the PNP transistor of the second SCR. The circuit is particularly suitable for high voltage triggering applications and two or more devices may be cascaded in series in order to further increase the triggering voltage.

    摘要翻译： ESD保护电路和器件结构包括五个晶体管，两个PNP和NPN 3。 五个晶体管耦合在一起，以便做一个第一NPN和PNP对构成第一可控硅整流器，可控硅。 第一SCR的NPN晶体管102和NPN型的第三晶体管耦合，从而构成thatthey一个达林顿对。 的进一步NPN和PNP对被耦合在一起以形成第二SCR与所述第一SCR被耦合与所述第二SCR的PNP晶体管的发射极，PNP晶体管的集电极。 该电路特别适用于高电压应用的触发和两个或多个设备可以串联，以进一步增加所述触发电压级联。

    INTEGRATED CIRCUIT, ELECTRONIC DEVICE AND ESD PROTECTION THEREFOR
    8.
    发明公开
    INTEGRATED CIRCUIT, ELECTRONIC DEVICE AND ESD PROTECTION THEREFOR 审中-公开
    INTGRIERTE电路，电子设备和防护静电放电THEREOF

    公开(公告)号：EP2572381A1

    公开(公告)日：2013-03-27

    申请号：EP10742033.3

    申请日：2010-05-18

    申请人： Freescale Semiconductor, Inc.

    发明人： BESSE, Patrice ,  LAINE, Jean Philippe

    IPC分类号： H01L27/02 ,  H01L29/74

    CPC分类号： H01L27/0259 ,  H01L29/87

    摘要： An integrated circuit comprising electro-static discharge (ESD) protection circuitry arranged to provide ESD protection to an external terminal of the integrated circuit. The ESD protection circuitry comprises: a thyristor circuit comprising a first bipolar switching device operably coupled to the external terminal and a second bipolar switching device operably coupled to another external terminal, a collector of the first bipolar switching device being coupled to a base of the second bipolar switching device and a base of the first bipolar switching device being coupled to a collector of the second bipolar switching device. A third bipolar switching device is also provided and operably coupled to the thyristor circuit and has a threshold voltage for triggering the thyristor circuit, the threshold voltage being independently configurable of the thyristor circuit. The first and second switching devices are arranged so as to provide, when in use, a bidirectional snapback characteristic and a snapback voltage associated therewith.

    摘要翻译： 一种集成电路，其包括布置在所述集成电路的外部端子，以提供ESD保护静电放电（ESD）保护电路。 的ESD保护电路包括：一个可控硅电路包括可操作地耦合到外部终端，并且可操作地耦合到另一外部端子的第二双极开关装置的第一双极开关装置，所述第一双极开关装置的集电极被耦合到所述第二的基 双极开关器件和所述第一双极开关装置的基极耦合到所述第二双极开关装置的集电极。 第三双极开关装置是如此设置，并且可操作地连接到所述晶闸管电路和具有阈值电压用于触发晶闸管电路中，阈值电压是所述晶闸管的unabhängig配置电路。 所述第一和第二开关装置被布置以便提供，在使用时，一个双向折返特性和骤回电压相关联的存在。

    ESD protection device with reduced clamping voltage
    9.
    发明公开
    ESD protection device with reduced clamping voltage 审中-公开
    具有降低钳位电压的ESD保护器件

    公开(公告)号：EP2568500A1

    公开(公告)日：2013-03-13

    申请号：EP11180790.5

    申请日：2011-09-09

    申请人： IMEC ,  Universiteit Gent

    发明人： Pierco, Ramses ,  Bauwelinck, Johan ,  Yin, Xin

    IPC分类号： H01L27/02 ,  H02H9/04

    CPC分类号： H01L27/0259 ,  H02H9/046

    摘要： Disclosed is an ESD protection circuit comprising a plurality of bipolar transistors, namely a plurality of ESD current conducting transistors (q1, q2, q4) in a main ESD current conducting path between a first and a second terminal (T1, T2), and further comprises at least one driving transistor (q3) connected in parallel to at least one of the ESD current conducting transistors (q1) and provided for conducting a driving current (lb2) to one or more of the ESD current conducting transistors (q3) on occurrence of an ESD event.

    摘要翻译： 公开了一种ESD保护电路，其包括在第一和第二端子（T1，T2）之间的主ESD电流传导路径中的多个双极晶体管，即多个ESD电流传导晶体管（q1，q2，q4） 包括至少一个驱动晶体管（q3），所述驱动晶体管（q3）并联连接至所述ESD电流传导晶体管（q1）中的至少一个，并且被设置用于在出现时将驱动电流（lb2）传导至一个或多个所述ESD电流传导晶体管 的ESD事件。

    ESD protection circuit
    10.
    发明公开
    ESD protection circuit 有权
    ESD保护电路

    公开(公告)号：EP2515334A1

    公开(公告)日：2012-10-24

    申请号：EP11163258.4

    申请日：2011-04-20

    申请人： NXP B.V.

    发明人： De Boet, Johannes Adrianus Maria

    IPC分类号： H01L27/02 ,  H03K19/003 ,  H02H9/04

    CPC分类号： H02H9/044 ,  H01L27/0259 ,  H03K19/00315

    摘要： Disclosed is a circuit (100) comprising a transistor (110) coupled between a supply voltage line (102) and ground (106), the transistor comprising a control terminal coupled to a input signal line (104), the circuit further comprising first and second bipolar transistors (122, 124) coupled in series between the input signal line (104) and ground (106), wherein the base of the first bipolar transistor is connected to the input signal line and the base of the second bipolar transistor is connected to ground.

    摘要翻译： 公开了一种包括耦合在电源电压线（102）和地（106）之间的晶体管（110）的电路（100），所述晶体管包括耦合到输入信号线（104）的控制端，所述电路进一步包括第一和 在输入信号线（104）和地（106）之间串联耦合的第二双极晶体管（122,124），其中第一双极晶体管的基极连接到输入信号线并且第二双极晶体管的基极连接 到地面。