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    Non-volatile SONOS semiconductor memory device and method of manufacturing the same
    4.
    发明公开
    Non-volatile SONOS semiconductor memory device and method of manufacturing the same 审中-公开
    NichtflüchtigesSONOS-Halbleiterspeicherbauelement und dessen Herstellungsverfahren

    公开(公告)号：EP1553619A1

    公开(公告)日：2005-07-13

    申请号：EP04257597.7

    申请日：2004-12-07

    申请人： Samsung Electronics Co., Ltd.

    发明人： Song, In-jae ,  Kim, Won-joo ,  Seo, Sun-ae

    IPC分类号： H01L21/28 ,  H01L29/423

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/66833

    摘要： A memory device and a method of fabricating the same are provided. The method includes forming a gate stack structure on a semiconductor substrate and partially exposing upper end portions of the semiconductor substrate by etching ends of the gate stack structure, and implanting a dopant into the exposed portions of the semiconductor substrate to form source and drain regions, wherein the gate stack structure is etched such that its width increases from top to bottom. Accordingly, it is possible to manufacture a memory device with high integration, using a simplified manufacture process.

    摘要翻译： 提供了一种存储器件及其制造方法。 该方法包括在半导体衬底上形成栅极堆叠结构，并通过蚀刻栅极堆叠结构的端部部分地暴露半导体衬底的上端部分，并且将掺杂剂注入到半导体衬底的暴露部分中以形成源极和漏极区域， 其中栅极堆叠结构被蚀刻，使得其宽度从顶部向底部增加。 因此，可以使用简化的制造工艺来制造具有高集成度的存储器件。

    Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same
    6.
    发明公开
    Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same 有权
    具有用于它们的制备的开关装置和一个耐热材料和过程的非易失性存储器设备

    公开(公告)号：EP1947696A1

    公开(公告)日：2008-07-23

    申请号：EP08155548.4

    申请日：2004-05-27

    申请人： Samsung Electronics Co., Ltd

    发明人： Seo, Sun-ae ,  Yoo, In-kyeong ,  Lee, Myoung-jae ,  Park, Wan-jun

    IPC分类号： H01L27/24 ,  H01L45/00

    CPC分类号： G11C13/0007 ,  G11C2213/32 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

    摘要： A nonvolatile memory device comprises a substrate, a diode with a switching function formed on the substrate, and a data storage unit connected to the diode. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges. The data storage material layer has a first resistance when a write voltage V w1 (0 1 w1 2 ) is applied to the data storage material layer, the first resistance representing a first data state. The data storage material layer has a second resistance different from the first resistance when a write voltage V 3 (V 2 3 ) is applied to the data storage material layer, the second resistance representing a second data state. The first and second data states are readable from the data storage material layer by application of a read voltage V R (V R 1 |) to the data storage material layer without altering the data state of the data storage material layer.

    摘要翻译： 一种非易失性存储装置包括基板，与形成在基片上开关功能的二极管，和连接到所述二极管的数据存储单元。 所述数据存储单元包括具有在不同的电压范围不同的电阻特性的数据存储材料层。 当写入电压V W1（0

    Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same
    9.
    发明公开
    Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same 审中-公开
    一种非易失性存储器装置，包括它们的制备开关器件和电阻材料，和流程

    公开(公告)号：EP2164104A2

    公开(公告)日：2010-03-17

    申请号：EP09179704.3

    申请日：2004-05-27

    申请人： Samsung Electronics Co., Ltd.

    发明人： Seo, Sun-ae ,  Yoo, In-kyeong ,  Lee, Myoung-jae ,  Park, Wan-jun

    IPC分类号： H01L27/24 ,  H01L45/00

    CPC分类号： G11C13/0007 ,  G11C2213/32 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

    摘要： A nonvolatile memory device comprises a substrate, a switching device and a data storage unit connected to the switching device. The data storage unit includes a data storage material layer in the form of a transition metal oxide layer having different resistance characteristics in different voltage ranges. The data storage material layer has a first resistance when a write voltage V W1 , 0 4 ≤V W1 , is applied to the data storage material layer, the first resistance representing a first data state. The data storage material layer also has a second resistance different from the first resistance when a write voltage V E1 , V E1 ≤V 5 R , V 5 R 4 , to the data storage material layer without altering the data state of the data storage material layer.

    摘要翻译： 一种非易失性存储器装置包括一个基底，一个开关装置和连接到开关装置的数据存储单元。 所述数据存储单元包括在具有不同的电压范围不同的电阻特性的过渡金属氧化物层形式的数据存储材料层。 当写入电压V W1，0