公开(公告)号：EP1411025A3

公开(公告)日：2004-11-03

申请号：EP03256418.9

申请日：2003-10-10

申请人： Samsung Electronics Co., Ltd.

发明人： Shong, Ci-moo ,  Chung, Seok-whan ,  Kang, Seok-jin ,  Lee, Moon-chul ,  Jung, Kyu-dong ,  Kim, Jong-seok ,  Jun, Chan-bong ,  Hong, Seog-woo ,  Kang, Jung-ho

IPC分类号： B81C1/00 ,  B81B7/00 ,  B81B1/00

CPC分类号： B81B7/0006 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-milling the deposited thin metal film. By the ion-milling, the method is capable of connecting a metal wiring to a via hole having an undercut.

公开(公告)号：EP1411025B1

公开(公告)日：2007-09-19

申请号：EP03256418.9

申请日：2003-10-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Shong, Ci-moo ,  Chung, Seok-whan ,  Kang, Seok-jin ,  Lee, Moon-chul ,  Jung, Kyu-dong ,  Kim, Jong-seok ,  Jun, Chan-bong ,  Hong, Seog-woo ,  Kang, Jung-ho

IPC分类号： B81C1/00 ,  B81B7/00 ,  B81B1/00

CPC分类号： B81B7/0006 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1411025A2

公开(公告)日：2004-04-21

申请号：EP03256418.9

申请日：2003-10-10

申请人： Samsung Electronics Co., Ltd.

发明人： Shong, Ci-moo ,  Chung, Seok-whan ,  Kang, Seok-jin ,  Lee, Moon-chul ,  Jung, Kyu-dong ,  Kim, Jong-seok ,  Jun, Chan-bong ,  Hong, Seog-woo ,  Kang, Jung-ho

IPC分类号： B81C1/00 ,  B81B7/00

CPC分类号： B81B7/0006 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-milling the deposited thin metal film. By the ion-milling, the method is capable of connecting a metal wiring to a via hole having an undercut.

摘要翻译： 在MEMS封装工艺中用于底切的金属布线方法包括：将MEMS元件设置在硅衬底上，将玻璃晶片焊接到其上设置有MEMS元件的硅衬底的上部，所述玻璃晶片具有形成在其中的孔，用于 连接金属布线，在该孔中沉积用于金属布线的薄金属膜，以及离子铣削沉积的薄金属膜。 通过离子铣削，该方法能够将金属布线连接到具有底切的通孔。