公开(公告)号：EP3151292A1

公开(公告)日：2017-04-05

申请号：EP16188699.9

申请日：2016-09-14

申请人： Samsung Electronics Co., Ltd. ,  Research & Business Foundation SungKyunKwan University

发明人： KIM, Sungwng ,  KIM, Eunsung ,  HWANG, Jaeyeol ,  PARK, Seongjun ,  SHIN, Hyeonjin

IPC分类号： H01L35/16 ,  H01L35/34

CPC分类号： H01L35/16 ,  H01L21/02488 ,  H01L21/02502 ,  H01L35/10 ,  H01L35/18 ,  H01L35/34

摘要： A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.

摘要翻译： 可以包括在热电装置中的热电结构可以包括可以包括多个薄膜层的薄膜结构。 薄膜结构可以包括碲。 薄膜结构可以在基底上。 衬底可以包括氧化物，并且缓冲层可以在衬底和薄膜结构之间。 热电结构可以通过从靶上烧蚀到衬底上的材料来制造。 一些材料可以与衬底反应以形成缓冲层，并且可以在缓冲层上形成薄膜层。 薄膜层可以从衬底上移除并提供在单独的衬底上。 从衬底去除薄膜层可以包括从缓冲层去除薄膜层。

公开(公告)号：EP3151292B1

公开(公告)日：2018-06-06

申请号：EP16188699.9

申请日：2016-09-14

申请人： Samsung Electronics Co., Ltd. ,  Research & Business Foundation SungKyunKwan University

发明人： KIM, Sungwng ,  KIM, Eunsung ,  HWANG, Jaeyeol ,  PARK, Seongjun ,  SHIN, Hyeonjin

IPC分类号： H01L35/16 ,  H01L35/34 ,  H01L21/02

CPC分类号： H01L35/16 ,  H01L21/02488 ,  H01L21/02502 ,  H01L35/10 ,  H01L35/18 ,  H01L35/34

摘要： A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.