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公开(公告)号：EP3767005A1
公开(公告)日：2021-01-20
申请号：EP20183928.9
申请日：2020-07-03
发明人： BYUN, Kyung-Eun , KIM, Hyoungsub , PARK, Taejin , KIM, Hoijoon , SHIN, Hyeonjin , AHN, Wonsik , LEEM, Mirine , CHO, Yeonchoo
摘要： A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
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公开(公告)号：EP3734669A1
公开(公告)日：2020-11-04
申请号：EP20163954.9
申请日：2020-03-18
发明人： JO, Sanghyun , YANG, Heejun , SHIN, Hyeonjin , ZHENG, Shoujun
IPC分类号： H01L29/88 , H01L29/66 , H01L29/417 , H01L29/24 , B82Y10/00 , H01L29/04 , H01L29/16 , G01N27/414 , H01L31/032
摘要： A resonant tunneling device includes a first two-dimensional semiconductor layer (131) including a first two-dimensional semiconductor material, like a transition metal dichalcogenide (TMDC or TMD), a first insulating, preferably also a two-dimensional, layer (140), on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer (132) on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material. The substrate (110) may comprise a back gate and the two-dimensional semiconductor layers are connected to first and second electrodes (171, 172), which may comprise graphene (150 in Fig. 13).
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3.发明公开THERMOELECTRIC STRUCTURE, THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME 有权热电材料，热电材料VERFAHREN ZUR HERSTELLUNG DAVON
公开(公告)号：EP3151292A1
公开(公告)日：2017-04-05
申请号：EP16188699.9
申请日：2016-09-14
发明人： KIM, Sungwng , KIM, Eunsung , HWANG, Jaeyeol , PARK, Seongjun , SHIN, Hyeonjin
CPC分类号： H01L35/16 , H01L21/02488 , H01L21/02502 , H01L35/10 , H01L35/18 , H01L35/34
摘要： A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.
摘要翻译： 可以包括在热电装置中的热电结构可以包括可以包括多个薄膜层的薄膜结构。 薄膜结构可以包括碲。 薄膜结构可以在基底上。 衬底可以包括氧化物，并且缓冲层可以在衬底和薄膜结构之间。 热电结构可以通过从靶上烧蚀到衬底上的材料来制造。 一些材料可以与衬底反应以形成缓冲层，并且可以在缓冲层上形成薄膜层。 薄膜层可以从衬底上移除并提供在单独的衬底上。 从衬底去除薄膜层可以包括从缓冲层去除薄膜层。
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公开(公告)号：EP3151292B1
公开(公告)日：2018-06-06
申请号：EP16188699.9
申请日：2016-09-14
发明人： KIM, Sungwng , KIM, Eunsung , HWANG, Jaeyeol , PARK, Seongjun , SHIN, Hyeonjin
CPC分类号： H01L35/16 , H01L21/02488 , H01L21/02502 , H01L35/10 , H01L35/18 , H01L35/34
摘要： A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.
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公开(公告)号：EP3961677A1
公开(公告)日：2022-03-02
申请号：EP21184750.4
申请日：2021-07-09
发明人： SHIN, Hyeonjin , SHIN, Keunwook
IPC分类号： H01L21/314 , H01L21/768
摘要： Provided are a method of forming a carbon layer and a method of forming an interconnect structure. The method of forming a carbon layer includes providing a substrate including first and second material layers, forming a surface treatment layer on at least one of the first and second material layers, and selectively forming a carbon layer on one of the first material layer and the second material layer. The carbon layer has an sp 2 bonding structure.
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6.发明公开
公开(公告)号：EP3882978A1
公开(公告)日：2021-09-22
申请号：EP21162665.0
申请日：2021-03-15
发明人： LEE, Minhyun , SEOL, Minsu , CHO, Yeonchoo , SHIN, Hyeonjin
IPC分类号： H01L29/786 , H01L29/778 , H01L29/24
摘要： A vertical type transistor includes: a substrate; a first source/drain electrode layer provided on the substrate; a second source/drain electrode layer provided above the first source/drain electrode layer; a first gate electrode layer provided between the first and second source/drain electrode layers; a first gate insulating film passing through the first gate electrode layer; a hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer; and a first channel layer provided on a lateral side of the hole, wherein the first channel layer may include a 2D semiconductor.
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公开(公告)号：EP3492428A3
公开(公告)日：2019-09-04
申请号：EP18206535.9
申请日：2018-11-15
发明人： SONG, Hyunjae , SHIN, Keunwook , SHIN, Hyeonjin , LEE, Changseok , KIM, Changhyun , BYUN, Kyungeun , LEE, Seungwon , LEE, Eunkyu
IPC分类号： C01B32/182 , C01B32/186
摘要： Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp 2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.
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8.发明公开
公开(公告)号：EP3438745A1
公开(公告)日：2019-02-06
申请号：EP18183212.2
申请日：2018-07-12
发明人： LEE, Minhyun , SHIN, Hyeonjin , JEONG, Seongjun , PARK, Seongjun
摘要： A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.
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公开(公告)号：EP3247032A1
公开(公告)日：2017-11-22
申请号：EP17168266.9
申请日：2017-04-26
发明人： BAIK, Jeongmin , CHUN, Jinsung , YE, Byeonguk , KIM, Jaeyoung , BYUN, Kyungeun , SEOL, Minsu , SHIN, Hyeonjin
IPC分类号： H02N1/04
摘要： A triboelectric generator includes first and second electrodes spaced apart from each other, a first charging object on a surface of the first electrode facing the second electrode, a second charging object provided between the first charging object and the second electrode, and a grounding unit configured to intermittently interconnect the second charging object and a charge reservoir due to motion of the second charging object. The first charging object is configured to be positively charged due to contact. The second charging object is configured to be negatively charged due to contact.
摘要翻译： 本发明提供一种摩擦发电装置，包括：第一电极和第二电极，在第一电极的与第二电极相对的面上具有第一带电对象;第二带电对象，设置在第一带电对象与第二电极之间;以及接地部， 以由于第二充电对象的运动而间歇地互连第二充电对象和电荷储存器。 第一充电对象被配置为由于接触而被充正电。 第二充电对象被配置为由于接触而带负电。
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10.发明公开MULTILAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND DEVICE INCLUDING THE MULTILAYER STRUCTURE 审中-公开与扩散阻挡层和设备符合这种多层结构的多层结构
公开(公告)号：EP3125291A1
公开(公告)日：2017-02-01
申请号：EP16176425.3
申请日：2016-06-27
发明人： SONG, Hyunjae , NAM, Seunggeol , PARK, Seongjun , SHIN, Keunwook , SHIN, Hyeonjin , LEE, Jaeho , LEE, Changseok , CHO, Yeonchoo
IPC分类号： H01L23/532 , H01L21/768 , H01L23/485
CPC分类号： H01L21/76846 , H01L21/28525 , H01L21/28568 , H01L23/485 , H01L23/53209 , H01L23/53238 , H01L23/53266 , H01L23/53271 , H01L29/45
摘要： A multilayer structure includes a first material layer (L10), a second material layer (L20), and a diffusion barrier layer (B10). The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.
摘要翻译： 一种多层结构，包括第一材料层（L10），第二材料层（L20），和扩散阻挡层（B10）。 第二材料层被连接到所述第一材料层。 所述第二材料层是由第一材料层隔开。 扩散阻挡层位于所述第一材料层和第二材料层之间。 扩散阻挡层可以包括一个二维（2D）的材料。 二维材料可以是基于非石墨烯材料，颜色：如具有二维晶体结构的基于硫族化物的金属材料。 第一材料层可以是半导体或绝缘体上，并且所述第二材料层可以是导体。 至少所述多层结构的一部分可以在电子设备上构成为互连。
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