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1.发明授权
公开(公告)号：EP2207206B1
公开(公告)日：2011-09-07
申请号：EP10150419.9
申请日：2010-01-11
发明人： Park, Jin-Seong , Mo, Yeon-gon , Chung, Hyun-Joong , Jeong, Jae-Kyeong , Kim, Min-Kyu , Ahn, Tae-Kyung
CPC分类号： H01L27/3262 , H01L2251/305
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2.发明公开
公开(公告)号：EP2207206A1
公开(公告)日：2010-07-14
申请号：EP10150419.9
申请日：2010-01-11
发明人： Park, Jin-Seong , Mo, Yeon-gon , Chung, Hyun-Joong , Jeong, Jae-Kyeong , Kim, Min-Kyu , Ahn, Tae-Kyung
CPC分类号： H01L27/3262 , H01L2251/305
摘要： Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a thin film transistor of a drive unit (110) that has an activation layer formed in a structure where a first oxide semiconductor layer (112a) and a second oxide semiconductor layer (112b) are stacked, a thin film transistor of the pixel unit (120) that has the activation layer formed of the second oxide semiconductor layer (122), and an organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has a channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.
摘要翻译： 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括驱动单元（110）的薄膜晶体管，该驱动单元具有以第一氧化物半导体层（112a）和第二氧化物半导体层（112b）堆叠的结构形成的活化层，薄的 具有由第二氧化物半导体层（122）形成的活化层的像素单元（120）的薄膜晶体管以及耦合到像素单元的薄膜晶体管的有机发光二极管。 驱动单元的薄膜晶体管具有形成在具有比第二氧化物半导体层高的载流子浓度的第一氧化物半导体层上的具有高电荷迁移率的沟道，并且像素单元的薄膜晶体管具有形成在 第二氧化物半导体层具有稳定且均匀的功能特性。
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3.发明公开Organic thin film transistor, method of manufacturing the same, and organic light emitting display device having the same 有权一种有机薄膜晶体管，其制备方法和含有有机lichtemittiernde这样的显示装置
公开(公告)号：EP1796184A3
公开(公告)日：2010-12-15
申请号：EP06255489.4
申请日：2006-10-25
发明人： Ahn, Taek , Suh, Min-Chul , Park, Jin-Seong
IPC分类号： H01L51/05
CPC分类号： H01L27/283 , H01L27/3274 , H01L51/0017 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： An organic thin film transistor that can prevent damage to source and drain electrodes when patterning an organic semiconductor layer, and a method of manufacturing an organic light emitting display device comprising the organic thin film transistor. The organic thin film transistor includes a source electrode and a drain electrode; an organic semiconductor layer that contacts the source and drain electrodes, and has an ashed surface except a channel area between the source and drain electrodes; a gate electrode insulated from the source electrode, the drain electrode, and the organic semiconductor layer; and a gate insulating film that insulates the gate electrode from the source electrode, the,drain electrode, and the organic semiconductor layer.
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4.发明公开Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor using the same and thin film transistor having semiconductor active layer. 有权一种用于生产使用这些和薄膜晶体管用的有源半导体层的薄膜晶体管的有源半导体层制造方法的方法
公开(公告)号：EP2017881A3
公开(公告)日：2009-07-08
申请号：EP08160476.1
申请日：2008-07-16
发明人： Jeong, Jong-Han , Jeong, Jae-Kyeong , Park, Jin-Seong , Mo, Yeon-Gon , Yang, Hui-Won , Kim, Min-Kyu , Ahn, Tae-Kyung , Shin, Hyun-Soo , Lee, Hun-Jung
IPC分类号： H01L21/363
CPC分类号： C23C14/086 , C23C14/3464 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic% of In in the IGZO layer to be about 45 atomic% to about 80 atomic%.
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