公开(公告)号：EP2017881A3

公开(公告)日：2009-07-08

申请号：EP08160476.1

申请日：2008-07-16

申请人： Samsung Mobile Display Co., Ltd.

发明人： Jeong, Jong-Han ,  Jeong, Jae-Kyeong ,  Park, Jin-Seong ,  Mo, Yeon-Gon ,  Yang, Hui-Won ,  Kim, Min-Kyu ,  Ahn, Tae-Kyung ,  Shin, Hyun-Soo ,  Lee, Hun-Jung

IPC分类号： H01L21/363

CPC分类号： C23C14/086 ,  C23C14/3464 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

摘要： A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic% of In in the IGZO layer to be about 45 atomic% to about 80 atomic%.

公开(公告)号：EP2144294A1

公开(公告)日：2010-01-13

申请号：EP09164894.9

申请日：2009-07-08

申请人： Samsung Mobile Display Co., Ltd.

发明人： Ha, Jae-Heung ,  Song, Young-Woo ,  Lee, Jong-Hyuk ,  Jeong, Jong-Han ,  Kim, Min-Kyu ,  Mo, Yeon-Gon ,  Jeong, Jae-Kyeong ,  Chung, Hyun-Joong ,  Kim, Kwang-Suk ,  Yang, Hui-Won ,  Choi, Chaungi

IPC分类号： H01L29/786

CPC分类号： H01L29/7869

摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

摘要翻译： 一种薄膜晶体管，制造该薄膜晶体管的方法，和一个平板显示装置包括薄膜晶体管。 所述薄膜晶体管包括：在形成的衬底的栅电极; 栅极绝缘膜形成在栅电极上; 在激活层形成在栅极绝缘膜 - ; 钝化层包括化合物半导体氧化物，形成在活化层上; 和源电极和漏电极的接触活化层。

公开(公告)号：EP2141743A1

公开(公告)日：2010-01-06

申请号：EP09250845.6

申请日：2009-03-25

申请人： Samsung Mobile Display Co., Ltd.

发明人： Jeong, Jae Kyeong ,  Jeong, Jong-Han ,  Kim, Min-Kyu ,  Ahn, Tae-Kyun ,  Mo, Yeon Gon ,  Yang, Hui-Won

IPC分类号： H01L29/49 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78696

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 在使用氧化物半导体作为有源层的薄膜晶体管（TFT），制造该TFT的方法以及具有该TFT的平板显示装置包括一个上形成的衬底的栅电极; 上由氧化物半导体的并通过栅极绝缘层与栅电极绝缘有源层; 耦合到所述有源层的源电极和漏电极; 和为在一个界面稳定层或形成在有源层的两面。 在TFT中，界面稳定层被形成为具有3.0的带隙8.0eV的氧化物。 因为界面稳定层具有相同的特性的栅极绝缘层和钝化层，经化学上高的界面稳定性得以保持。 因为界面稳定层的带隙比有源层的等于或大于，电荷俘获在物理上防止。