专利检索 ap:("Samsung Mobile Display Co., Ltd.") AND inv:"Shin, Hyun-Soo" 第 1 页

1.

发明公开
Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor using the same and thin film transistor having semiconductor active layer. 有权
标题翻译：一种用于生产使用这些和薄膜晶体管用的有源半导体层的薄膜晶体管的有源半导体层制造方法的方法

公开(公告)号：EP2017881A3

公开(公告)日：2009-07-08

申请号：EP08160476.1

申请日：2008-07-16

申请人： Samsung Mobile Display Co., Ltd.

发明人： Jeong, Jong-Han , Jeong, Jae-Kyeong , Park, Jin-Seong , Mo, Yeon-Gon , Yang, Hui-Won , Kim, Min-Kyu , Ahn, Tae-Kyung , Shin, Hyun-Soo , Lee, Hun-Jung

IPC分类号： H01L21/363

CPC分类号： C23C14/086 , C23C14/3464 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631

摘要： A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic% of In in the IGZO layer to be about 45 atomic% to about 80 atomic%.

2.

发明授权
Substrate including a deformation preventing layer 有权
标题翻译：具有变形防止层基底

公开(公告)号：EP1659621B1

公开(公告)日：2009-08-26

申请号：EP05110914.8

申请日：2005-11-18

申请人： Samsung Mobile Display Co., Ltd.

发明人： Koo, Jae-Bon , Shin, Hyun-Soo , Suh, Min-Chul , Mo, Yeon-Gon

IPC分类号： H01L21/20 , C23C16/02

CPC分类号： H01L21/02532 , C23C16/0272 , H01L21/02425 , H01L21/02488 , H01L29/78603