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1.发明公开Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT 审中-公开一种用于制备Polykristallinsilicium过程如此生产的薄膜晶体管，制造具有薄膜晶体管的薄膜晶体管和有机发光显示装置的方法
公开(公告)号：EP2006903A3
公开(公告)日：2008-12-31
申请号：EP08158539.0
申请日：2008-06-19
发明人： Yang, Tae-Hoon c/o Samsung SDI Co., Ltd., , Lee, Ki-Yong Mobile Display R&D Center IP Group , Seo, Jin-Wook c/o Samsung SDI Co., Ltd., , Park, Byoung-Keon c/o Samsung SDI Co., Ltd., , Lee, Kil-Won Mobile Display R&D Center IP Group
IPC分类号： H01L29/786 , H01L29/49 , H01L21/20 , H01L21/77
CPC分类号： H01L29/4908 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02694 , H01L27/1277 , H01L29/78654
摘要： A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 to 50Å on the a-Si layer, forming a metal catalyst layer on the thermal oxide layer, and annealing the substrate to crystallize the a-Si layer into the poly-Si layer using a metal catalyst of the metal catalyst layer. Thus, the a-Si layer can be crystallized into a poly-Si layer by a super grain silicon (SGS) crystallization method. Also, the thermal oxide layer may be formed during the dehydrogenation of the a-Si layer so that an additional process of forming a capping layer required for the SGS crystallization method can be omitted, thereby simplifying the fabrication process.
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2.发明公开Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT 审中-公开一种用于制备Polykristallinsilicium过程如此生产的薄膜晶体管，制造具有薄膜晶体管的薄膜晶体管和有机发光显示装置的方法
公开(公告)号：EP2006903A2
公开(公告)日：2008-12-24
申请号：EP08158539.0
申请日：2008-06-19
发明人： Yang, Tae-Hoon c/o Samsung SDI Co., Ltd., , Lee, Ki-Yong Mobile Display R&D Center IP Group , Seo, Jin-Wook c/o Samsung SDI Co., Ltd., , Park, Byoung-Keon c/o Samsung SDI Co., Ltd., , Lee, Kil-Won Mobile Display R&D Center IP Group
CPC分类号： H01L29/4908 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02694 , H01L27/1277 , H01L29/78654
摘要： A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 to 50Å on the a-Si layer, forming a metal catalyst layer on the thermal oxide layer, and annealing the substrate to crystallize the a-Si layer into the poly-Si layer using a metal catalyst of the metal catalyst layer. Thus, the a-Si layer can be crystallized into a poly-Si layer by a super grain silicon (SGS) crystallization method. Also, the thermal oxide layer may be formed during the dehydrogenation of the a-Si layer so that an additional process of forming a capping layer required for the SGS crystallization method can be omitted, thereby simplifying the fabrication process.
摘要翻译： 一种制造多晶硅（poly-Si）的层包括：提供基板，无定形硅（a-Si）的形成层在基板上，对在a-Si的厚度为约10形成热氧化物层，以50埃的方法 层，在形成热氧化物层上形成金属催化剂层，和退火所述衬底以使a-Si层结晶成使用所述金属层的金属催化剂催化剂的多晶Si层。 因此，在a-Si层可以通过超晶粒硅（SGS）结晶化方法被结晶成多晶硅层。 因此，热氧化层可以在非晶硅层的脱氢期间形成，从而没有形成用于SGS结晶方法所需的盖层的附加工艺可以省略，从而简化了制造工艺。
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