公开(公告)号：EP1417042A2

公开(公告)日：2004-05-12

申请号：EP02748647.1

申请日：2002-03-28

申请人： Schott Glas ,  CARL-ZEISS-STIFTUNGtrading as Schott Glas

发明人： KUHR, Markus ,  WOLFF, Detlef ,  WALTHER, Marten ,  BEHLE, Stephan ,  BAUER, Stefan ,  KLIPPE, Lutz ,  MOELLE, Christoph ,  BEWIG, Lars ,  KOPPE, Frank ,  KÜPPER, Thomas ,  MARING, Wolfram ,  HEINZ, Jochen;

IPC分类号： B05D7/24

CPC分类号： G02B1/111 ,  B05D1/62 ,  B05D7/02 ,  B05D7/52 ,  C23C16/029 ,  C23C16/515 ,  G02B1/10

摘要： The invention relates to the coating of a synthetic substrate for producing a coated body, a device for carrying out such a method and the use thereof.

公开(公告)号：EP1264002A1

公开(公告)日：2002-12-11

申请号：EP01951109.6

申请日：2001-01-27

申请人： Schott Glas ,  Carl-Zeiss-Stiftung trading as Schott Glas

发明人： BAUCH, Hartmut ,  BEWIG, Lars ,  KLIPPE, Lutz ,  KÜPPER, Thomas

IPC分类号： C23C16/455 ,  C23C16/448

CPC分类号： C23C16/448

摘要： The invention relates to a gas supply device for delivering precursors with a low vapor pressure to CVD coating systems. Said gas supply device has a supply container for the precursor which is at a first temperature T1, an intermediate storage device for intermediately storing the vaporous precursor at a second temperature T2 and at a constant pressure p2, a first gas line between the supply container and the intermediate storage device and a second gas line for removing gas from the intermediate storage device. According to the invention, the gas supply device is developed in such a way that the first temperature T1 is higher than the second temperature T2. The lower temperature T2 of the intermediate storage device facilitates maintenance work on the same, while the precursor evaporates at a greater rate at the higher temperature T1 in the supply container. According to a particularly advantageous embodiment, a first precursor vapor is mixed with a gas and/or a second precursor vapor in the intermediate storage device. The partial pressure of the first precursor vapor in the intermediate storage device is lower than that of the undiluted first precursor vapor at a constant overall pressure in said intermediate storage device, so that the temperature T2 of the intermediate storage device and the successive lines can be reduced. Reducing the temperature T2 allows less expensive components to be used.

公开(公告)号：EP1415018A1

公开(公告)日：2004-05-06

申请号：EP02762433.7

申请日：2002-08-07

申请人： Schott Glas

发明人： BEHLE, Stephan ,  KLIPPE, Lutz ,  BICKER, Matthias ,  WALTHER, Marten

IPC分类号： C23C16/515 ,  C23C16/30 ,  C23C16/40 ,  B65D65/42

CPC分类号： C23C16/401 ,  C23C16/045 ,  C23C16/30 ,  C23C16/405 ,  C23C16/515 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/31507 ,  Y10T428/31565 ,  Y10T428/31587 ,  Y10T428/31667

摘要： The invention relates to a composite material with a substrate material and at least one barrier coating on one side of the substrate material. The invention is characterised in that the barrier coating is applied to the substrate material by means of plasma impulse chemical vapour deposition (PICVD) and the barrier layer comprises at least one of the following materials: SiOx with x⊂[0.2], TiOx with x⊂[0.2], amorphous hydrocarbons, electrically conducting layers, SnOx with x⊂[0.2], SixNy with x⊂[0.3], y⊂[0.4], NbxOy with x⊂[0.2], y⊂[0.5], AlxOy with x⊂[0.2], y⊂[0.3].