公开(公告)号：EP2256817A2

公开(公告)日：2010-12-01

申请号：EP10009810.2

申请日：2000-04-11

申请人： Semiconductor Energy Laboratory Co, Ltd.

发明人： Shunpei, Yamazaki ,  Koyama, Jun ,  Takayama, Toru ,  Hamantani, Toshiji

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  G02F1/1362

CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.