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公开(公告)号：EP4206356A1
公开(公告)日：2023-07-05
申请号：EP21860663.0
申请日：2021-08-17
IPC分类号： C23C16/455 , C23C16/40 , H01L21/336 , H01L21/365 , H01L21/8242 , H01L27/108 , H01L27/11556 , H01L27/1156 , H01L29/788 , H01L29/792
摘要： A method for depositing a metal oxide is provided. The deposition method of a metal oxide includes a first step of introducing a first precursor into a first chamber, a second step of introducing a second precursor into the first chamber, a third step of introducing a third precursor into the first chamber, a fourth step of introducing an oxidizer in a plasma state into the first chamber after each of the first step, the second step, and the third step, and a fifth step of performing microwave treatment. Performing each of the first to fourth steps one or more times is regarded as one cycle, and the fifth step is performed in a second chamber after the one cycle is repeated a plurality of times. The first to third precursors are different kinds of precursors, the microwave treatment is performed using an oxygen gas and an argon gas, the metal oxide includes a crystal region, and a c-axis of the crystal region is substantially parallel to a normal vector of a surface where the metal oxide is formed or a normal vector of a surface of the metal oxide.
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公开(公告)号：EP2491585B1
公开(公告)日：2020-01-22
申请号：EP10824778.4
申请日：2010-09-27
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , IMAI, Keitaro
IPC分类号： H01L21/8238 , H01L21/822 , H01L29/786 , H01L27/06 , H01L27/12 , H01L21/84
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公开(公告)号：EP2494596B1
公开(公告)日：2020-01-15
申请号：EP10826530.7
申请日：2010-10-07
发明人： YAMAZAKI, Shunpei
IPC分类号： H01L21/8234 , H01L27/088 , H01L29/786 , G11C11/405 , G11C16/04 , H01L21/8258 , H01L27/02 , H01L29/78 , H01L27/105 , H01L27/115 , H01L27/12 , H01L49/02 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L27/1156
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公开(公告)号：EP1318553B1
公开(公告)日：2019-10-09
申请号：EP02027513.7
申请日：2002-12-05
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公开(公告)号：EP2887395B1
公开(公告)日：2019-05-08
申请号：EP15154322.0
申请日：2010-10-29
发明人： Kato, Kiyoshi , Koyama, Jun
IPC分类号： H01L27/105 , H01L21/8234 , H01L21/8242 , H01L27/00 , H01L27/088 , H01L27/10 , H01L27/108 , H01L29/786 , H03K3/037 , H03K3/356 , H03K19/00 , H03K19/0948 , H03K19/096 , G11C14/00 , G11C7/04 , G11C16/04 , H01L21/02 , H01L21/28 , H01L29/66 , H01L27/12 , H03K3/286
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公开(公告)号：EP3223283B1
公开(公告)日：2019-03-06
申请号：EP17168951.6
申请日：2007-09-11
发明人： Umezaki, Atsushi , Miyake, Hiroyuki
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公开(公告)号：EP2196518B1
公开(公告)日：2018-09-26
申请号：EP09174823.6
申请日：2009-11-03
发明人： Inoue, Hideko , Ohsawa, Nobuharu , Seo, Satoshi
CPC分类号： H01L51/56 , C09K11/06 , C09K2211/1007 , C09K2211/1044 , C09K2211/185 , H01L51/0085 , H01L51/009 , H01L51/5036 , H05B33/14
摘要： To provide a light-emitting element, a light-emitting device, and an electronic device each formed using the organometallic complex represented by General Formula (G1) as a guest material and a low molecule compound as a host material.
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公开(公告)号：EP1544842B1
公开(公告)日：2018-08-22
申请号：EP04029476.1
申请日：2004-12-13
发明人： Osame, Mitsuaki , Yamazaki, Yu
IPC分类号： G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G5/399 , H01L27/32 , G09G3/20
CPC分类号： G09G3/3266 , G09G3/2022 , G09G3/3233 , G09G3/3291 , G09G5/399 , G09G2300/0417 , G09G2300/0842 , G09G2310/0256 , G09G2320/043 , G09G2360/18 , H01L27/3244 , H01L27/3295 , H01L2251/5315 , H01L2251/564 , H01L2251/568
摘要： A display device capable of applying reverse driving voltage for a light emitting element to a light emitting element every certain period for prolonging light emitting element's life and burning out a shorted portion. Besides a path for supplying forward current to the light emitting element, a path for supplying reverse current is provided. A driving transistor is provided in the former path while a transistor (AC transistor) is provided in the latter path, thereby a switching between the two paths is controlled. The AC transistor has a rate L/W of a channel length L to a channel width W smaller than that of the driving transistor. Accordingly, current flowing into the light emitting element can be flowed into the AC transistor in the case of reverse driving voltage being applied to the light emitting element.
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公开(公告)号：EP2496591B1
公开(公告)日：2018-05-30
申请号：EP10826648.7
申请日：2010-10-19
发明人： INOUE, Hideko , NAKAGAWA, Tomoka , OHSAWA, Nobuharu , SEO, Satoshi , YAMADA, Yui
CPC分类号： H01L51/0085 , C07F15/0033 , C07F15/0086 , C09B57/10 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1022 , C09K2211/1059 , C09K2211/185 , H01L51/0059 , H01L51/0072 , H01L51/0074 , H01L51/0087 , H01L51/5016 , H01L51/5036 , H05B33/14
摘要： Provided are organometallic complexes that can exhibit phosphorescence. One of the novel organometallic complexes is represented by General Formula (G1). In General Formula (G1), R1 represents any of an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 8 carbon atoms which may have a substituent, and an aralkyl group having 7 to 10 carbon atoms which may have a substituent. In addition, R2 represents any of an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 5 to 8 carbon atoms which may have a substituent, and an aryl group having 6 to 12 carbon atoms which may have a substituent. Further, Ar represents an arylene group having 6 to 13 carbon atoms which may have a substituent. Further, M represents a Group 9 element or a Group 10 element.
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公开(公告)号：EP2428959B1
公开(公告)日：2018-05-30
申请号：EP11180109.8
申请日：2011-09-06
IPC分类号： G11C8/08 , G11C11/403 , G11C11/405 , G11C11/408 , G11C16/02
CPC分类号： H01L27/1052 , G11C8/08 , G11C11/403 , G11C11/405 , G11C11/4085 , G11C16/02 , G11C16/0433 , G11C16/0483 , G11C16/08 , G11C2211/4016
摘要： A semiconductor device in which stored data can be held even when power is not supplied and there is no limitation on the number of writing operations is provided. A semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, such as an oxide semiconductor material that is a wide-gap semiconductor. When a semiconductor material which can sufficiently reduce the off-state current of a transistor is used, the semiconductor device can hold data for a long period. In addition, by providing a capacitor or a noise removal circuit electrically connected to a write word line, a signal such as a short pulse or a noise input to a memory cell can be reduced or removed. Accordingly, a malfunction in which data written into the memory cell is erased when a transistor in the memory cell is instantaneously turned on can be prevented.
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