Light-emitting device and fabricating method thereof
    1.
    发明公开
    Light-emitting device and fabricating method thereof 审中-公开
    Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren

    公开(公告)号:EP0908988A2

    公开(公告)日:1999-04-14

    申请号:EP98308112.6

    申请日:1998-10-06

    IPC分类号: H01S3/19 H01L33/00

    摘要: A light-emitting device includes a first guide layer; a second guide layer; and an active layer interposed between the first guide layer and the second guide layer. The active layer has a multiple quantum well structure including a plurality of quantum well layers and a quantum barrier layer interposed between the adjacent quantum well layers. The first guide layer and the second guide layer are disposed to be adjacent to the quantum well layers. The first guide layer and the second guide layer have a forbidden band width which is larger than a forbidden band width of the quantum well layers. The forbidden band width of at least one of the first guide layer and the second guide layer is smaller than a forbidden band width of the quantum barrier layer.

    摘要翻译: 发光装置包括第一引导层; 第二引导层; 以及介于所述第一引导层和所述第二引导层之间的有源层。 有源层具有包括多个量子阱层和置于相邻量子阱层之间的量子势垒层的多量子阱结构。 第一引导层和第二引导层设置成与量子阱层相邻。 第一引导层和第二引导层具有大于量子阱层的禁带宽度的禁带宽度。 第一引导层和第二引导层中的至少一个的禁带宽度小于量子势垒层的禁带宽度。

    Light-emitting device and fabricating method thereof
    2.
    发明公开
    Light-emitting device and fabricating method thereof 审中-公开
    发光装置及其制造方法

    公开(公告)号:EP0908988A3

    公开(公告)日:2001-10-17

    申请号:EP98308112.6

    申请日:1998-10-06

    IPC分类号: H01S3/19 H01L33/00 H01S5/223

    摘要: A light-emitting device includes a first guide layer; a second guide layer; and an active layer interposed between the first guide layer and the second guide layer. The active layer has a multiple quantum well structure including a plurality of quantum well layers and a quantum barrier layer interposed between the adjacent quantum well layers. The first guide layer and the second guide layer are disposed to be adjacent to the quantum well layers. The first guide layer and the second guide layer have a forbidden band width which is larger than a forbidden band width of the quantum well layers. The forbidden band width of at least one of the first guide layer and the second guide layer is smaller than a forbidden band width of the quantum barrier layer.

    摘要翻译: 发光装置包括第一引导层; 第二引导层; 以及介于第一引导层和第二引导层之间的有源层。 有源层具有包括多个量子阱层和插入在相邻量子阱层之间的量子势垒层的多量子阱结构。 第一引导层和第二引导层被设置为与量子阱层相邻。 第一引导层和第二引导层的禁带宽度大于量子阱层的禁带宽度。 第一引导层和第二引导层中的至少一个的禁带宽度小于量子势垒层的禁带宽度。