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    PROCESS AND PLANT FOR THE PURIFICATION OF TRICHLOROSILANE AND SILICON TETRACHLORIDE
    4.
    发明公开
    PROCESS AND PLANT FOR THE PURIFICATION OF TRICHLOROSILANE AND SILICON TETRACHLORIDE 有权
    METHOD AND SYSTEM FOR CLEANING三氯硅烷和四氯化硅

    公开(公告)号：EP1812343A2

    公开(公告)日：2007-08-01

    申请号：EP05813212.7

    申请日：2005-11-14

    申请人： MEMC ELECTRONIC MATERIALS S.p.A.

    发明人： GHETTI, Gianfranco, MEMC ELECTRONIC MATERIALS SPA

    IPC分类号： C01B33/107

    CPC分类号： C01B33/10794 ,  C01B33/10778

    摘要： The invention concerns a process (and a corresponding plant) for the purification of trichlorosilane and/or silicon tetrachloride comprising the following steps of treating technical grade trichlorosilane and/or technical grade silicon tetrachloride: complexation of the boron impurities (trichloride BCI3) and other metallic impurities by addition of diphenylthiocarbazone and/or triphenylchloromethane, with the formation of complex macromolecules having high boiling point, first column distillation of the complexation step products, wherein the complexed boron impurities, together with other metallic impurities are removed as bottoms, and second column distillation of the tops of the previous distillation, wherein electronic grade trichlorosilane (plus dichlorosilane possible present) and/or silicon tetrachloride are obtained as tops and phosphorus chlorides PCI3 and phosphorus containing compounds, arsenic chlorides AsCI3 and arsenic containing compounds, aluminium compounds, antimony compounds and in general all the present metals and metalloids compounds and carbo-silanes compounds, having a certain residual amount of trichlorosilane and/or silicon tetrachloride, are obtained as bottoms.

    METHOD FOR PURIFYING CHLOROSILANE
    5.
    发明公开
    METHOD FOR PURIFYING CHLOROSILANE 审中-公开
    净化氯硅烷的方法

    公开(公告)号：EP3168190A1

    公开(公告)日：2017-05-17

    申请号：EP15818302.0

    申请日：2015-07-02

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： MIYAO, Shuichi ,  ISHIDA, Masahiko ,  YOSHIDA, Atsushi ,  NETSU, Shigeyoshi

    IPC分类号： C01B33/107

    CPC分类号： C01B33/10794 ,  B01D3/14 ,  C01B33/107 ,  C01B33/1071 ,  C01B33/10789

    摘要： First, at least one of silanol and a siloxane compound is generated in a chlorosilane (S101). In the step, for example, an inert gas having a moisture concentration of 0.5 to 2.5 ppm is brought into contact with the chlorosilane to dissolve the moisture, and at least one of silanol and a siloxane compound is generated through a hydration reaction of a moiety of the chlorosilane. Next, a boron-containing compound contained in the chlorosilane is reacted with the silanol or the siloxane compound, thereby converting the boron-containing compound to a boron oxide (S102). Through the step (S102), the boron-containing compound being a low boiling point compound is converted to a boron oxide being a high boiling point compound, and therefore the difference in boiling point from the boiling point of chlorosilane becomes larger to make later separation easy.

    摘要翻译： 首先，在氯硅烷中生成硅烷醇和硅氧烷化合物中的至少一种（S101）。 在该工序中，例如使水分浓度为0.5〜2.5ppm的惰性气体与氯硅烷接触而溶解水分，通过水分子反应生成硅烷醇和硅氧烷化合物中的至少一种 的氯硅烷。 接着，使氯硅烷中含有的含硼化合物与硅烷醇或硅氧烷化合物反应，将含硼化合物转化为氧化硼（S102）。 通过步骤（S102），将作为低沸点化合物的含硼化合物转化为高沸点化合物即氧化硼，因此与氯硅烷的沸点的沸点差变大，以后分离 简单。

    Process and plant for the purification of trichlorosilane and silicon tetrachloride
    7.
    发明公开
    Process and plant for the purification of trichlorosilane and silicon tetrachloride 审中-公开
    过程和安装三氯硅烷和四氯化硅的精制

    公开(公告)号：EP2634143A3

    公开(公告)日：2014-09-10

    申请号：EP13156857.8

    申请日：2005-11-14

    申请人： MEMC Electronic Materials S.p.A.

    发明人： Ghetti, Gianfranco

    IPC分类号： C01B33/107

    CPC分类号： C01B33/10794 ,  C01B33/10778

    摘要： A process for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride, the process comprising:
    adding diphenylthiocarbazone and/or triphenylchloromethane to the technical grade trichlorosilane and/or technical grade silicon tetrachloride to form complex impurity macromolecules with impurities in the technical grade trichlorosilane and/or technical grade silicon tetrachloride , the impurities being selected from the group consisting of boron impurities, boron trichloride, metallic impurities, and combinations thereof;
    distilling the technical grade trichlorosilane and/or technical glade silicon tetrachloride having complex impurity macromolecules in a first column distillation, wherein the first column distillation results in first distillation tops and first distillation bottoms, wherein the first distillation bottom comprise complex impurity macromolecules and are removed from the first distillation tops; and
    distilling the first distillation tops in a second column distillation resulting in second distillation tops and second distillation bottoms, wherein the second distillation bottoms comprise a residual amount of trichlorosilane and/or silicon tetrachloride and a compound selected from the group consisting of phosphorus chloride, other phosphorus containing compounds, arsenic chloride, other arsenic containing compounds, aluminum compounds, antimony compounds, other metal compounds, metalloid compounds, carbosilane compounds, and combinations thereof, and the second distillation tops comprise electronic grade trichlorosilane and/or electronic grade silicon tetrachloride.

    METHOD FOR PURIFYING CHLOROSILANE
    8.
    发明公开
    METHOD FOR PURIFYING CHLOROSILANE 审中-公开

    公开(公告)号：EP3168190A4

    公开(公告)日：2018-05-09

    申请号：EP15818302

    申请日：2015-07-02

    申请人： SHINETSU CHEMICAL CO

    发明人： MIYAO SHUICHI ,  ISHIDA MASAHIKO ,  YOSHIDA ATSUSHI ,  NETSU SHIGEYOSHI

    IPC分类号： C01B33/107 ,  B01D3/14

    CPC分类号： C01B33/10794 ,  B01D3/14 ,  C01B33/107 ,  C01B33/1071 ,  C01B33/10789

    摘要： First, at least one of silanol and a siloxane compound is generated in a chlorosilane (S101). In the step, for example, an inert gas having a moisture concentration of 0.5 to 2.5 ppm is brought into contact with the chlorosilane to dissolve the moisture, and at least one of silanol and a siloxane compound is generated through a hydration reaction of a moiety of the chlorosilane. Next, a boron-containing compound contained in the chlorosilane is reacted with the silanol or the siloxane compound, thereby converting the boron-containing compound to a boron oxide (S102). Through the step (S102), the boron-containing compound being a low boiling point compound is converted to a boron oxide being a high boiling point compound, and therefore the difference in boiling point from the boiling point of chlorosilane becomes larger to make later separation easy.