公开(公告)号：EP3168190A4

公开(公告)日：2018-05-09

申请号：EP15818302

申请日：2015-07-02

申请人： SHINETSU CHEMICAL CO

发明人： MIYAO SHUICHI ,  ISHIDA MASAHIKO ,  YOSHIDA ATSUSHI ,  NETSU SHIGEYOSHI

IPC分类号： C01B33/107 ,  B01D3/14

CPC分类号： C01B33/10794 ,  B01D3/14 ,  C01B33/107 ,  C01B33/1071 ,  C01B33/10789

摘要： First, at least one of silanol and a siloxane compound is generated in a chlorosilane (S101). In the step, for example, an inert gas having a moisture concentration of 0.5 to 2.5 ppm is brought into contact with the chlorosilane to dissolve the moisture, and at least one of silanol and a siloxane compound is generated through a hydration reaction of a moiety of the chlorosilane. Next, a boron-containing compound contained in the chlorosilane is reacted with the silanol or the siloxane compound, thereby converting the boron-containing compound to a boron oxide (S102). Through the step (S102), the boron-containing compound being a low boiling point compound is converted to a boron oxide being a high boiling point compound, and therefore the difference in boiling point from the boiling point of chlorosilane becomes larger to make later separation easy.

公开(公告)号：EP2385017A1

公开(公告)日：2011-11-09

申请号：EP10004757.0

申请日：2010-05-05

申请人： Su, Shyang ,  Su, Yiheng ,  Vukelic, Michael

发明人： Su, Shyang ,  Su, Yiheng ,  Vukelic, Michael

IPC分类号： C01B33/107

CPC分类号： C01B33/10778 ,  B01J19/0066 ,  B01J19/1862 ,  C01B33/10784 ,  C01B33/10789

摘要： A process is disclosed for purification of silicon source material including trichlorosilane. First, the silicon source material in liquid state with impurities vapor and the other chlorosilane or silane are passing a first high gravity rotating packed bed with spongy metal, at a temperature lower than the boiling point of the silicon source material, the impurities vapor and the other chlorosilane or silane are separated from the liquid silicon source material; second, the silicon source material in liquid state is fed to a second high gravity rotating packed bed, oxygen is also fed to the second high gravity rotating packed bed to form impurity containing siloxane complexes with higher boiling point. Finally distilling to remove the impurity containing siloxane complexes from the silicon source material.

摘要翻译： 一种方法是游离缺失盘为包含三氯硅烷的硅源材料的纯化。 首先，在液体状态下的硅源材料与杂质的蒸汽和其它氯硅烷或硅烷使第一高重力与海绵状金属旋转床，在比硅源材料的沸点低的温度下，杂质蒸气和 其它氯硅烷或硅烷从液体硅源材料分离; 第二，在液态硅源材料被供给到第二高重力旋转填充床，氧气被如此输送到第二高重力旋转填充床，以形成杂质含硅氧烷配合物的更高的沸点。 最后蒸除去杂质从硅源材料包含硅氧烷络合物。

公开(公告)号：EP2385017B1

公开(公告)日：2013-12-11

申请号：EP10004757.0

申请日：2010-05-05

申请人： Su, Shyang ,  Su, Yiheng ,  Vukelic, Michael

发明人： Su, Shyang ,  Su, Yiheng ,  Vukelic, Michael

IPC分类号： C01B33/107

CPC分类号： C01B33/10778 ,  B01J19/0066 ,  B01J19/1862 ,  C01B33/10784 ,  C01B33/10789

公开(公告)号：EP3168190A1

公开(公告)日：2017-05-17

申请号：EP15818302.0

申请日：2015-07-02

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： MIYAO, Shuichi ,  ISHIDA, Masahiko ,  YOSHIDA, Atsushi ,  NETSU, Shigeyoshi

IPC分类号： C01B33/107

CPC分类号： C01B33/10794 ,  B01D3/14 ,  C01B33/107 ,  C01B33/1071 ,  C01B33/10789

摘要： First, at least one of silanol and a siloxane compound is generated in a chlorosilane (S101). In the step, for example, an inert gas having a moisture concentration of 0.5 to 2.5 ppm is brought into contact with the chlorosilane to dissolve the moisture, and at least one of silanol and a siloxane compound is generated through a hydration reaction of a moiety of the chlorosilane. Next, a boron-containing compound contained in the chlorosilane is reacted with the silanol or the siloxane compound, thereby converting the boron-containing compound to a boron oxide (S102). Through the step (S102), the boron-containing compound being a low boiling point compound is converted to a boron oxide being a high boiling point compound, and therefore the difference in boiling point from the boiling point of chlorosilane becomes larger to make later separation easy.

摘要翻译： 首先，在氯硅烷中生成硅烷醇和硅氧烷化合物中的至少一种（S101）。 在该工序中，例如使水分浓度为0.5〜2.5ppm的惰性气体与氯硅烷接触而溶解水分，通过水分子反应生成硅烷醇和硅氧烷化合物中的至少一种 的氯硅烷。 接着，使氯硅烷中含有的含硼化合物与硅烷醇或硅氧烷化合物反应，将含硼化合物转化为氧化硼（S102）。 通过步骤（S102），将作为低沸点化合物的含硼化合物转化为高沸点化合物即氧化硼，因此与氯硅烷的沸点的沸点差变大，以后分离 简单。