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公开(公告)号：EP1787319A1
公开(公告)日：2007-05-23
申请号：EP05777305.3
申请日：2005-08-31
申请人： Silecs OY
发明人： RANTALA, Juha, T. , PAULASAARI, Jyri , KYLMÄ, Janne , TÖRMÄNEN, Turo, T. , PIETIKÄINEN, Jarkko , HACKER, Nigel , HADZIC, Admir
IPC分类号： H01L21/312 , H01B3/46 , C08G77/60
CPC分类号： C09D183/14 , C08G77/50 , H01B3/46 , H01L21/02126 , H01L21/02282 , H01L21/3122 , H01L21/76822 , H01L21/76837 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , Y10T428/31663 , H01L2924/00
摘要： A thin film comprising a composition obtained by polymerizing a monomer having the formula (I), wherein R1 is a hydrolysable group, R2 is a polarizability reducing organic group, and R3 is a bridging hydrocarbon group, to form a siloxane material. The invention also concerns methods for producing the thin films. The thin film can be used a low k dielectric in integrated circuit devices. The novel dielectric materials have excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition.
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公开(公告)号：EP2113005A2
公开(公告)日：2009-11-04
申请号：EP08718533.6
申请日：2008-02-21
申请人： Silecs OY
CPC分类号： H01L21/3122 , C08G77/06 , C08G77/16 , C08G77/20 , C08G77/70 , C09D183/04 , H01B3/46 , H01L21/02126 , H01L21/02282 , Y10T428/31663
摘要： Thin films are disclosed that are suitable as thin films in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a high silicon content film.
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