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    NOVEL NANOPARTICLE CONTAINING SILOXANE POLYMERS
    3.
    发明公开
    NOVEL NANOPARTICLE CONTAINING SILOXANE POLYMERS 审中-公开
    与硅氧烷纳米新

    公开(公告)号：EP2091999A2

    公开(公告)日：2009-08-26

    申请号：EP07858337.4

    申请日：2007-12-13

    申请人： Silecs OY

    发明人： RANTALA, Juha T. ,  PAULASAARI, Jyri ,  GÄDDA, Thomas

    IPC分类号： C08J5/00 ,  C08L83/04 ,  C08K3/00 ,  H01L23/29

    摘要： A method of producing a polymer composition for semiconductor optoelectronics, comprising the steps of providing at least one type of disilane monomer which is homo- or copolymerized to form a (co)polymer and then combined with nanoparticles to provide a polymer composition. The nanoparticle containing composition has excellent properties with high refractive index or dielectric constant.

    SEMICONDUCTOR OPTOELECTRONICS DEVICES
    5.
    发明公开
    SEMICONDUCTOR OPTOELECTRONICS DEVICES 审中-公开
    OPTOELEKTRONISCHE HALBLEITERANORDNUNGEN

    公开(公告)号：EP2033222A2

    公开(公告)日：2009-03-11

    申请号：EP07730120.8

    申请日：2007-06-13

    申请人： Silecs OY

    发明人： RANTALA, Juha

    IPC分类号： H01L27/146

    CPC分类号： H01L27/1462 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

    摘要： A semiconductor device comprising a semiconductor substrate with a plurality of photodiodes arranged in the semiconductor substrate with interconnect layers defining apertures at the photo-diodes and a first polymer which fills the gaps such as to cover the photo-diode. Further, layers of color filters are arranged on top the gap filling polymer layer opposite to the photo-diodes and a second polymer arranged on the interconnect layers covers and planarizes and passivates the color filter layers. On top of the planarizing polymer there is a plurality of micro-lenses opposite to the color filters, and a third polymer layer is deposited on the microlenses for passivating the micro-lenses. According to the invention the polymer materials are comprised of a siloxane polymer which gives thermally and mechanically stable, high index of refraction, dense dielectric films exhibiting high-cracking threshold, low pore volume and pore size.

    摘要翻译： 一种半导体器件，包括具有多个光电二极管的半导体衬底，所述多个光电二极管布置在所述半导体衬底中，具有在所述光电二极管处限定孔的互连层和填充所述间隙以覆盖所述光电二极管的第一聚合物。 此外，彩色滤光片层布置在与光电二极管相对的间隙填充聚合物层的顶部，并且布置在互连层上的第二聚合物覆盖并平坦化并钝化滤色器层。 在平坦化聚合物的顶部，存在与滤色器相对的多个微透镜，并且在微透镜上沉积第三聚合物层以钝化微透镜。 根据本发明，聚合物材料由提供热和机械稳定的高折射率的硅氧烷聚合物组成，表现出高裂纹阈值，低孔体积和孔径的致密介电膜。

    POLY(ORGANOSILOXANE) MATERIALS AND METHODS FOR HYBRID ORGANIC-INORGANIC DIELECTRICS FOR INTEGRATED CIRCUIT APPLICATIONS
    9.
    发明公开
    POLY(ORGANOSILOXANE) MATERIALS AND METHODS FOR HYBRID ORGANIC-INORGANIC DIELECTRICS FOR INTEGRATED CIRCUIT APPLICATIONS 有权
    一种用于生产设备符合集成电路和相应的设备与集成电路

    公开(公告)号：EP1490454A2

    公开(公告)日：2004-12-29

    申请号：EP03731976.1

    申请日：2003-01-17

    申请人： Silecs OY

    发明人： RANTALA, Juha ,  REID, Jason ,  TORMANEN, Teemu ,  VISWANATHAN, Nungavaram, Sundaram ,  MAANINEN, Arto, L., T.

    IPC分类号： C09K13/00

    CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    摘要： An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 30.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electricaly insulating material is deposited on the substrate followed by heating at a temperature of 350 °C or less; and whrein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material. A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid by crosslinking via the fully or partially fluorinated orgnanic group.